Rohm DTB123YK 500ma / 50v digital transistors (with built-in resistor) Datasheet

500mA / 50V Digital transistors
(with built-in resistor)
DTB123YU / DTB123YK
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
2.0
DTB123YU
 Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistors
(see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
0.9
0.2
0.3
0.7
2.1
1.25
(3)
0.1Min.
(1)
(2)
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
0.15
1.3
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : F52
DTB123YK
2.9
 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
1.1
0.4
0.8
1.6
2.8
(3)
Package
(2)
UMT3
Packaging type
Code
SMT3
Taping
Taping
T106
T146
(1)
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
0.3Min.
 Packaging specifications
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : F52
Part No.
Basic ordering
unit (pieces)
3000
3000
−
DTB123YU
−
DTB123YK
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
DTB123YU DTB123YK
Inner circuit
Unit
Supply voltage
VCC
−50
Input voltage
VIN
−12 to +5
V
Output current
IC
−500
mA
Power dissipation
PD
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
OUT
R1
V
IN
R2
GND(+)
OUT
IN
GND(+)
R1=2.2kΩ, R2=10kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.E
DTB123YU / DTB123YK
Data Sheet
 Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Min.
Typ.
Max.
VI(off)
−
−
−0.3
VI(on)
−2
−
−
VO(on)
−
−0.1
−0.3
V
Symbol
Unit
VCC= −5V, IO= −100μA
V
VO= −0.3V, IO= −20mA
IO/II= −50mA/−2.5mA
II
−
−
−3.0
mA
IO(off)
−
−
−0.5
μA
GI
56
−
−
−
Input resistance
R1
1.54
2.2
2.86
kΩ
Resistance ratio
R2/R1
3.6
4.5
5.5
−
−
200
−
MHz
Input current
Output current
DC current gain
Transition frequency
fT
∗
Conditions
VI= −5V
VCC= −50V, VI= 0V
VO= −5V, IO= −50mA
−
−
VCE= −10V, IE= 50mA, f= 100MHz
∗ Characteristics of built-in transistor
 Electrical characteristic curves
-10m
-5m
VO= −0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
-50
-20
-10
-5
-2
Ta= −40 °C
25 °C
100 °C
-1
-500m
-200m
-100m
-0.5m -1m -2m
-5m -10m -20m
-50m -100m -200m -500m
1k
VCC= −5V
-2m
-1m
-500μ
Ta=100°C
25°C
−40°C
-200μ
-100μ
-50μ
-20μ
-10μ
-5μ
-2μ
-1μ
0
VO= −5V
500
DC CURRENT GAIN : GI
-100
200
100
Ta=100°C
25°C
−40°C
50
20
10
5
2
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
1
-0.5m -1m -2m
-5m -10m -20m
-50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
-1
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
-500m
-200m
-100m
Ta=100°C
25°C
−40°C
-50m
-20m
-10m
-5m
-2m
-1m
-0.5m -1m -2m
-5m -10m -20m
-50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.E
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