2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base current IB 2 A PC 30 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Electrical Characteristics (Tc = 25°C) Characteristics JEDEC Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 10 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 10 µA V (BR) CEO IC = 50 mA, IB = 0 80 ― ― V VCE = 1 V, IC = 1 A 70 ― 240 hFE (2) VCE = 1 V, IC = 6 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 6 A, IB = 0.3 A ― 0.2 0.4 V Base-emitter saturation voltage VBE (sat) IC = 6 A, IB = 0.3 A ― 0.9 1.2 V VCE = 5 V, IC = 1 A ― 80 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 220 ― pF ― 0.2 ― ― 1.0 ― ― 0.2 ― hFE (1) DC current gain (Note) Transition frequency Collector output capacitance Turn-on time fT Cob ton Storage time tstg IB2 Switching time Input IB1 20 µs IB1 IB2 Output 5Ω Collector-emitter breakdown voltage µs VCC ≈ 30 V Fall time tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 1 2004-07-07 2SC3710A Marking C3710A Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3710A IC – VCE VCE – IC 1.0 Common emitter Tc = 25°C VCE 50 40 8 Collector-emitter voltage IC (A) Collector current 60 (V) 100 80 70 10 30 6 20 4 IB = 10 mA 2 0 0 2 4 6 8 10 Collector-emitter voltage VCE 12 0.8 40 60 80 100 0.4 400 600 0.2 2 12 Collector current IC (A) VCE – IC 0.8 60 80 100 150 VCE 40 200 0.6 300 0.4 600 0.2 0 0 Common emitter Tc = 100°C (V) Common emitter Tc = −55°C IB = 20 mA Collector-emitter voltage (V) 10 8 1.0 VCE Collector-emitter voltage 6 4 VCE – IC 2 6 4 8 10 IB = 50 mA 300 400 700 0.2 2 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 1 V hFE 25 −55 50 30 0.3 1 8 10 12 VCE (sat) – IC 1 Tc = 100°C 10 0.1 6 4 hFE – IC 100 200 Collector current IC (A) 500 300 150 0.4 0 0 12 100 0.6 Collector current IC (A) DC current gain 200 300 (V) 1.0 0.8 150 0.6 0 0 14 Common emitter Tc = 25°C IB = 20 mA 3 10 0.5 0.3 0.1 0.05 Collector current IC (A) Tc = −55°C 25 100 0.02 0.1 20 Common emitter IC/IB = 20 0.3 1 3 10 20 Collector current IC (A) 3 2004-07-07 2SC3710A VBE (sat) – IC IC – VBE 10 Common emitter IC/IB = 20 Common emitter VCE = 1 V Tc = −55°C 1 8 IC (A) 3 6 0.5 25 Collector current Base-emitter saturation voltage VBE (sat) (V) 5 100 0.3 0.1 0.1 0.3 1 3 Tc = 100°C 25 4 −55 2 20 10 Collector current IC (A) 0 0 0.4 0.8 1.2 1.6 Base-emitter voltage VBE 2.0 2.4 (V) rth – tw 100 (°C/W) Curves should be applied in thermal limited area. Transient thermal resistance rth 30 (2) (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 (1) 3 1 0.3 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 30 PC – Ta 1 ms* 10 I max C (continuous) (W) (1) Tc = Ta 5 10 ms* DC operation Tc = 25°C 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 3 10 Collector-emitter voltage (1) 30 20 10 VCEO max 30 (2) 0 0 100 VCE Infinite heat sink (2) No heat sink 40 PC 3 50 Collector dissipation Collector current IC (A) IC max (pulsed)* (V) 40 80 120 Ambient temperature 4 160 Ta 200 240 (°C) 2004-07-07 2SC3710A RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07