PHILIPS BU2520A Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
VBE = 0 V
PINNING - SOT93
PIN
TYP.
MAX.
UNIT
6
0.2
1500
800
10
25
125
5.0
0.35
V
V
A
A
W
V
A
µs
Tmb ≤ 25 ˚C
IC = 6.0 A; IB = 1.2 A
ICM = 6.0 A; IB(end) = 0.85 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
tab
1
base
2
collector
3
emitter
tab
collector
b
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
800
10
25
6
9
150
6
125
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
1.0
K/W
45
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Junction to mounting base
-
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
November 1995
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 100 mA; VCE = 5 V
IC = 6 A; VCE = 5 V
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
800
13.5
-
1.0
-
mA
V
V
6
5
13
7
5.0
1.3
26
10
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
115
-
pF
Switching times (32 kHz line
deflection circuit)
ICM = 6.0 A; LC = 330 µH; Cfb = 9 nF;
IB(end) = 0.85 A; LB = 3.45 µH;
-VBB = 4 V; (-dIB/dt = 1.2 A/µs)
3.0
0.2
4.0
0.35
µs
µs
4.5
0.35
5.5
0.5
µs
µs
ts
tf
Turn-off storage time
Turn-off fall time
ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
Switching times (16 kHz line
deflection circuit)
ts
tf
Turn-off storage time
Turn-off fall time
IC / mA
+ 50v
100-200R
250
Horizontal
200
Oscilloscope
100
Vertical
100R
1R
0
6V
VCE / V
30-60 Hz
min
VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICM
TRANSISTOR
IC
BU2520A
+ 150 v nominal
adjust for ICM
DIODE
t
Lc
IBend
IB
t
20us
26us
LB
IBend
T.U.T.
Cfb
64us
VCE
BY228
-VBB
t
Fig.3. Switching times waveforms (16 kHz).
ICM
TRANSISTOR
IC
Fig.6. Switching times test circuit (BU2520A).
100
BU2520A
hFE
DIODE
Tj = 25 C
5V
t
Tj = 125 C
IBend
IB
10
t
10us
1V
13us
32us
VCE
1
0.1
10
1
100
IC / A
t
Fig.4. Switching times waveforms (32 kHz).
Fig.7. Typical DC current gain. hFE = f (IC)
parameter VCE
ICM
1.2
90 %
VBESAT / V
Tj = 25 C
1.1
IC
BU2520A
Tj = 125 C
1
0.9
10 %
0.8
tf
t
ts
0.7
IBend
0.6
IC/IB=
IB
3
4
0.5
t
5
0.4
0.1
- IBM
Fig.5. Switching times definitions.
November 1995
1
IC / A
10
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
1
VCESAT / V
BU2520A
BU2520A
Eoff / uJ
1000
BU2520A
IC/IB =
0.9
5
0.8
32 kHz
4
0.7
IC = 6 A
3
0.6
16 kHz
100
0.5
5A
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
10
0
0.1
10
1
0.1
100
IC / A
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
1.2
VBESAT / V
BU2520A
12
11
10
9
8
7
6
5
4
3
2
1
0
Tj = 125 C
1
0.9
IC=
0.8
8A
6A
5A
4A
0.7
0.6
0
1
2
IB / A
3
VCESAT / V
BU2520A
12
11
10
9
Tj = 125 C
1
6A
IC =
6A
5A
tf
1
IB / A
10
ts, tf / us
BU2520A
32 kHz
ts
5
4
3
5A
IC =
6A
2
1
0
IC = 4 A
0.1
5A
0.1
10
1
IB / A
tf
10
Fig.14. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
Fig.11. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
November 1995
ts
16 kHz
8
7
6
8A
1
IB / A
BU2520A
Fig.13. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
Tj = 25 C
0.1
ts, tf / us
0.1
4
Fig.10. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
10
10
Fig.12. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; parameter frequency
Tj = 25 C
1.1
1
IB / A
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
Normalised Power Derating
PD%
120
BU2520A
IC / A
BU2520A
100
110
100
90
tp =
ICM
80
= 0.01
70
60
50
30 us
ICDC
40
10
30
20
10
100 us
0
0
20
40
60
80
100
Tmb / C
120
140
Ptot
Fig.15. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
1
1 ms
10
Zth / (K/W)
1
0.1
0.5
0.1
10 ms
0.2
0.1
0.05
DC
0.02
PD
0.01
D=0
0.001
1E-06
tp
D=
T
tp
T
1E-04
1E-02
t/s
0.01
t
1
1E+00
100
1000
VCE / V
Fig.17. Forward bias safe operating area. Tmb = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Fig.16. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
November 1995
10
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520A
MECHANICAL DATA
Dimensions in mm
15.2
max
14
Net Mass: 5 g
4.6
max
13.6
2 max
4.25
4.15
2
4.4
21
max
12.7
max
2.2 max
0.5
min
dimensions within
this zone are
uncontrolled
1
2
5.5
13.6
min
3
1.15
0.95
0.5 M
0.4
1.6
11
Fig.18. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
November 1995
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1995
7
Rev 1.200
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