Renesas BB504MDS-TL-E Built in biasing circuit mos fet ic vhf&uhf rf amplifier Datasheet

Preliminary Datasheet
BB504M
R07DS0286EJ0800
(Previous: REJ03G0837-0700)
Rev.8.00
Mar 28, 2011
Built in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
Features
•
•
•
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; MPAK-4 (SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
Notes:
1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “DS–”.
2. BB504M is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Ratings
6
Unit
V
+6
–0
V
Gate2 to source voltage
VG2S
V
Drain current
Channel power dissipation
Channel temperature
Storage temperature
ID
Pch
Tch
Tstg
+6
–0
30
150
150
–55 to +150
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
mA
mW
°C
°C
Page 1 of 9
BB504M
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
Min
6
+6
+6
—
—
0.6
Typ
—
—
—
—
—
0.85
Max
—
—
—
+100
+100
1.1
Unit
V
V
V
nA
nA
V
VG2S(off)
0.6
0.85
1.1
V
Drain current
ID(op)
13
16
19
mA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ
Forward transfer admittance
|yfs|
24
29
34
mS
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain (1)
ciss
coss
crss
PG
1.7
1.0
—
25
2.1
1.4
0.027
30
2.5
1.8
0.05
—
pF
pF
pF
dB
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 120 kΩ, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ
f = 1 MHz
Noise figure (1)
NF
—
1.0
1.8
dB
Power gain (2)
Noise figure (2)
PG
NF
17
—
22
1.75
—
2.3
dB
dB
Gate2 to source cutoff voltage
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Test conditions
ID = 200 μA, VG1S = VG2S = 0
IG1 = +10 μA, VG2S = VDS = 0
IG2 = +10 μA, VG1S = VDS = 0
VG1S = +5 V, VG2S = VDS = 0
VG2S = +5 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 μA
VDS = 5 V, VG1S = 5 V
ID = 100 μA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ
f = 200 MHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ
f = 900 MHz
Page 2 of 9
BB504M
Preliminary
Test Circuits
• DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
• 200 MHz Power Gain, Noise Figure Test Circuit
1000p
1000p
47k
VT
VG2
VT
1000p
47k
1000p
47k
BBFET
Output(50Ω)
1000p
L2
Input(50Ω)
L1
10p max
1000p
1000p
36p
1SV70
RG
RFC
120k
1SV70
1000p
VD = VG1
Unit Resistance (Ω)
Capacitance (F)
L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : Φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 3 of 9
BB504M
Preliminary
• 900 MHz Power Gain, Noise Figure Test Circuit
VD
VG1 VG2
C6
C4
C5
R1
R2
C3
R3
RFC
D
G2
Output
L3
L4
G1
Input
S
L1
L2
C1
C1, C2
C3
C4 to C6
R1
R2
R3
C2
:
:
:
:
:
:
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
120 kΩ
47 kΩ
4.7 kΩ
L2:
L1:
10
3
3
8
10
26
(Φ1mm Copper wire)
Unit:mm
21
L4:
L3:
18
10
10
7
7
29
RFC : Φ1mm Copper wire with enamel 4turns inside dia 6mm
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 4 of 9
BB504M
Preliminary
Typical Output Characteristics
200
50
0
50
100
150
Drain Current ID (mA)
3V
2V
4
VG2S = 1 V
1
2
3
4
5
8k
Ω
=6
4
5
30
VDS = 5 V
RG = 120 kΩ
24 f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Power Gain vs. Gate Resistance
Noise Figure vs. Gate Resistance
40
4
Noise Figure NF (dB)
35
Power Gain PG (dB)
3
Forward Transfer Admittance
vs. Gate1 Voltage
8
30
25
10
10
2
Drain Current vs. Gate1 Voltage
12
15
1
Drain to Source Voltage VDS (V)
4V
20
4
Ambient Temperature Ta (°C)
VDS = 5 V
RG = 120 kΩ
0
kΩ
0
18 Ω
0k
22
8
0
200
20
16
12
82
10 k Ω
15
0
1
2
k
0
kΩ 0 kΩ Ω
100
16
G
150
VG2S = 4 V
VG1 = VDS
R
Drain Current ID (mA)
20
Forward Transfer Admittance |yfs| (mS)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 200 MHz
20
50
100 200
500 1000
Gate Resistance RG (kΩ)
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
3
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 200MHz
2
1
0
10
20
50
100 200
500 1000
Gate Resistance RG (kΩ)
Page 5 of 9
BB504M
Preliminary
Noise Figure vs. Gate Resistance
Power Gain vs. Gate Resistance
4
40
Noise Figure NF (dB)
Power Gain PG (dB)
35
30
25
20
15
10
10
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 900 MHz
20
50
3
2
1
0
10
500 1000
100 200
VDS = 5V
VG1 = 5 V
VG2S = 4 V
f = 900 MHz
Gate Resistance RG (kΩ)
Input Capacitance Ciss (pF)
Drain Current ID (mA)
500 1000
4
20
10
VDS = VG1=5 V
VG2S = 4 V
20
50
3
2
VDS = VG1= 5 V
RG = 120 kΩ
f = 1 MHz
1
0
500 1000
100 200
0
1
2
3
4
Gate Resistance RG (kΩ)
Gate2 to Source Voltage VGS2 (V)
Gain Reduction vs.
Gate2 acto Source Voltage
Gain Reduction vs.
Gate2 acto Source Voltage
0
0
Gain Reduction GR (dB)
Gain Reduction GR (dB)
100 200
Input Capacitance vs.
Gate2 to Source Voltage
30
10
20
30
VDS = VG1 = 5 V
RG = 120 kΩ
f = 200 MHz
40
50
50
Gate Resistance RG (kΩ)
Drain Current vs. Gate Resistance
0
10
20
4
3
2
20
30
0
VDS = VG1 = 5 V
RG = 120 kΩ
f = 900 MHz
40
50
1
Gate2 to Source Voltage VGS2 (V)
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
10
4
3
2
1
0
Gate2 to Source Voltage VGS2 (V)
Page 6 of 9
BB504M
Preliminary
S11 Parameter vs. Frequency
1
.8
.6
S21 Parameter vs. Frequency
90°
1.5
Scale: 1 / div.
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
−10
−5
−4
−.2
−3
−.4
−30°
−150°
−2
−.6
−.8
−1
Test Condition: VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
Scale: 0.004/ div.
.8
60°
120°
−90°
Test Condition: VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
−60°
−120°
−1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
−10
−5
−4
−.2
−30°
−150°
−3
−.4
−120°
−60°
−90°
Test Condition: VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
−2
−.6
−.8
−1
−1.5
Test Condition: VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
Page 7 of 9
BB504M
Preliminary
S Parameter
(VDS = VG1 = 5V, VG2S = 4 V, RG = 120 kΩ, Zo = 50 Ω)
S11
f(MHz)
S21
S12
S22
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
MAG.
1.000
0.993
0.991
0.984
0.978
0.970
0.958
0.954
0.945
0.932
0.920
0.910
0.900
0.887
0.870
0.863
ANG.
-3.3
-7.2
-10.9
-15.0
-19.0
-22.8
-26.7
-30.3
-33.8
-37.5
-40.6
-44.3
-47.5
-50.9
-54.4
-57.6
MAG.
2.80
2.78
2.77
2.74
2.72
2.68
2.64
2.60
2.56
2.50
2.46
2.41
2.37
2.31
2.27
2.22
ANG.
175.9
170.9
166.1
161.2
156.5
151.8
147.2
142.7
138.6
134.1
129.8
125.7
121.6
117.8
113.6
110.0
MAG.
0.00106
0.00171
0.00253
0.00356
0.00442
0.00485
0.00576
0.00642
0.00689
0.00712
0.00765
0.00804
0.00798
0.00787
0.00785
0.00758
ANG.
58.8
75.7
75.1
77.4
78.2
80.0
74.7
71.7
73.3
71.8
70.7
69.9
69.1
67.8
70.8
73.3
MAG.
0.990
0.992
0.991
0.987
0.985
0.982
0.978
0.973
0.968
0.963
0.958
0.952
0.947
0.942
0.936
0.929
ANG.
-2.4
-4.7
-7.2
-9.6
-12.2
-14.7
-17.1
-19.6
-22.0
-24.2
-26.7
-28.9
-31.3
-33.4
-35.8
-37.9
850
900
950
1000
0.853
0.839
0.827
0.819
-60.9
-63.6
-66.5
-70.1
2.18
2.12
2.07
2.04
105.8
102.2
98.6
94.9
0.00721
0.00694
0.00716
0.00667
75.2
75.8
88.1
92.7
0.924
0.917
0.912
0.906
-40.3
-42.5
-44.5
-46.7
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 8 of 9
BB504M
Preliminary
Package Dimensions
Package Name
MPAK-4
JEITA Package Code
SC-61AA
RENESAS Code
PLSP0004ZA-A
D
Previous Code
MPAK-4 / MPAK-4V
MASS[Typ.]
0.013g
A
e
e2
b1
Q
B
c
B
E
HE
L
A
Reference Dimension in Millimeters
Symbol
Min
Nom Max
LP
L1
A
A3
x M S
b
A
e2
A2
e
I1
A
b5
e1
A1
y S
S
b
b1
I1
c
c
b4
A-A Section
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
c
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
I1
Q
1.0
0
1.0
0.35
0.55
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.6
0.16
1.5
0.95
0.85
2.8
1.3
0.1
1.2
0.5
0.7
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.05
0.55
0.75
1.95
1.05
0.3
Ordering Information
Orderable Part Number
BB504MDS-TL-E
BB504MDS-TL-H
Note:
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 9 of 9
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Colophon 1.1
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