TSC BAS40-06 200mw, low vf, smd schottky barrier diode Datasheet

BAS40 / -04 / -05 / -06
SMD
Schottky
Barrier Diode
200mW, Low VF,
Small Signal Diode
SOT-23
F
A
C
Features
B
Metal-on-silicon Shcottky Barrier
E
Surface device type mounting
Moisture sensitivity level 1
G
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Dimensions
Mechanical Data
Unit (inch)
Min
Max
Min
Max
Case : Flat lead SOT 23 small outline plastic package
A
2.80
3.00
0.110
0.118
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
B
1.20
1.40
0.047
0.055
C
0.30
0.50
0.012
0.020
High temperature soldering guaranteed: 260°C/10s
D
1.80
2.00
0.071
0.079
Weight : 0.008gram (approximately)
Marking Code : 43.44.45.46
E
2.25
2.55
0.089
0.100
F
0.90
1.20
0.035
0.043
G
BAS40
BAS40-04
0.550 REF
BAS40-05
0.022 REF
BAS40-06
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Symbol
Value
Units
PD
200
mW
VRRM
40
V
Reverse Voltage
VR
40
V
Repetitive Peak Forward Current
IFRM
200
mA
mA
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient)
(Note 2)
Junction and Storage Temperature Range
IO
200
IFSM
0.6
A
RθJA
357
°C/W
TJ, TSTG
-65 to + 125
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
IR=
10μA
Forward Voltage
IF=
IF=
IF=
1mA
10mA
40mA
Symbol
Min
Max
Units
V(BR)
40
-
V
-
0.38
-
0.50
-
1.00
VF
V
Reverse Leakage Current
VR=
30V
IR
-
0.2
μA
Junction Capacitance
VR=1V,
f=1.0MHz
CJ
-
5
pF
Trr
-
5.0
ns
Reverse Recovery Time IF =IR=10mA,RL=100Ω,IRR=1mA
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : D11
BAS40 / -04 / -05 / -06
200mW, Low VF, SMD Schottky Barrier Diode
Small Signal Diode
Rating and Sharacteristic Curves ( BAS40 / -04 / -05 / -06 )
FIG.2- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER LEG
PEAK FORWARD SURGE CURRENT. (mA)
PD, POWER DISSIPATION (mW)
FIG.1- POWER DERATING CURVE
200
100
0
0
25
50
75
100
600
8.3ms Single Half Sine Wave
(JEDEC Method)
300
0
125
1
2
5
10
20
NUMBER OF CYCLES AT 60Hz
TA, AMBIENT TEMPERATURE ( C)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
50
100
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1
10000
IR, INSTANTANEOUS REVERSE CURRENT. ( nnA)
INSTANTANEOUS FORWARD CURRENT (mA)
TA= 125 0C
0.1
TA= -40 0C
TA= 0 0C
0.01
TA= 25 0C
TA= 70 0C
0.001
TA= 125 0C
0.0001
0
1.0
0.8
Tj, INSTANTANEOUS FORWARD VOLTAGE (mV)
0.2
0.4
0.6
1000
TA= 70 0C
100
TA= 25 0C
10
TA= 0 0C
1
0.1
1.2
JUNCTION CAPACITANCE (pF)
TRANSIENT THERMAL IMPEDANCE. (OC/W)
100
f = 1.0MHz
2.0
0
0
5
10
REVERSE VOLTAGE
15
0
10
20
30
40
VR, REVERSE VOLTAGE. (V)
FIG.5- TYPICAL TOTAL CAPACITANCE VS
REVERSE VOLTAGE
4.0
TA= -40 0C
20
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
10
1
0.1
0.01
0.1
1
PULSE DURATION. (sec)
10
100
Version : D11
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