PHILIPS BYD33J Fast soft-recovery controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D119
BYD33 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass package
through Implotec(1) technology.
This package is hermetically sealed
• High maximum operating
temperature
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
handbook, 4 columns
a
• Available in ammo-pack.
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
BYD33D
−
200
V
−
400
V
BYD33J
−
600
V
BYD33K
−
800
V
BYD33M
−
1000
V
BYD33U
−
1200
V
BYD33V
−
1400
V
−
200
V
continuous reverse voltage
BYD33G
−
400
V
BYD33J
−
600
V
BYD33K
−
800
V
BYD33M
−
1000
V
BYD33U
−
1200
V
BYD33V
−
1400
V
average forward current
−
1.30
A
1.26
A
−
0.70
A
−
0.67
A
BYD33D to M
−
12
A
BYD33U and V
−
11
A
average forward current
BYD33D to M
BYD33U and V
repetitive peak forward current
1996 Sep 18
Ttp = 55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
BYD33D to M
IFRM
UNIT
BYD33G
BYD33U and V
IF(AV)
MAX.
repetitive peak reverse voltage
BYD33D
IF(AV)
MIN.
Tamb = 65 °C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
Ttp = 55 °C; see Figs 6 and 7
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
IFRM
BYD33 series
PARAMETER
repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
Tamb = 65 °C; see Figs 8 and 9
BYD33D to M
−
7
A
BYD33U and V
−
6
A
−
20
A
BYD33D to J
−
10
mJ
BYD33K to V
−
7
mJ
−65
+175
°C
−65
+175
°C
MIN.
TYP.
MAX.
IF = 1 A; Tj = Tj max;
see Figs 14 and 15
−
−
1.1
V
IF = 1 A;
see Figs 14 and 15
−
−
1.3
V
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
Tstg
storage temperature
Tj
junction temperature
see Figs 12 and 13
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
V(BR)R
IR
trr
PARAMETER
forward voltage
reverse avalanche breakdown
voltage
CONDITIONS
IR = 0.1 mA
BYD33D
300
−
−
V
BYD33G
500
−
−
V
BYD33J
700
−
−
V
BYD33K
900
−
−
V
BYD33M
1100
−
−
V
BYD33U
1300
−
−
V
BYD33V
1500
−
−
V
VR = VRRMmax;
see Fig.16
−
−
1
µA
VR = VRRMmax;
Tj = 165 °C; see Fig.16
−
−
100
µA
−
−
250
ns
−
−
300
ns
−
−
500
ns
−
20
−
pF
reverse current
reverse recovery time
BYD33D to J
BYD33K and M
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A
see Fig.21
BYD33U and V
Cd
diode capacitance
1996 Sep 18
UNIT
f = 1 MHz; VR = 0 V;
see Figs 17 and 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
dI R
-------dt
BYD33 series
PARAMETER
maximum slope of reverse recovery
current
BYD33D to J
BYD33K to V
CONDITIONS
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1 A/µs;
see Fig.20
MIN.
TYP.
MAX.
UNIT
−
−
6
A/µs
−
−
5
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
Rth j-a
thermal resistance from junction to ambient
note 1
VALUE
UNIT
60
K/W
120
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
GRAPHICAL DATA
MGA857
1.6
MLB905
1.6
handbook, halfpage
handbook, halfpage
I F(AV)
I F(AV)
(A)
lead length 10 mm
(A)
lead length 10 mm
1.2
1.2
0.8
0.8
0.4
0.4
0
0
100
0
T tp ( oC)
100
0
200
BYD33D to M
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
BYD33U and V
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MLB902
1.2
MLB906
handbook, halfpage
I F(AV)
I F(AV)
(A)
(A)
0.8
0.8
0.4
0.4
0
100
Tamb ( o C)
0
200
0
100
BYD33D to M
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.19.
BYD33U and V
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Switched mode application.
Fig.4
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 18
200
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
1.2
handbook, halfpage
0
T tp ( oC)
5
Tamb ( o C)
200
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
MGA859
12
handbook, full pagewidth
I FRM
(A)
10
δ = 0.05
8
0.1
6
0.2
4
0.5
2
1
0
10 2
10 1
1
10
10 2
10 3
10 4
t p (ms)
BYD33D to M
Ttp = 55 °C; Rth j-tp = 60 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB909
12
handbook, full pagewidth
I FRM
(A)
10
δ = 0.05
8
0.1
6
0.2
4
0.5
2
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYD33U and V
Ttp = 55°C; Rth j-tp = 60 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
MGA860
8
handbook, full pagewidth
I FRM
(A)
6
δ = 0.05
0.1
4
0.2
2
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYD33D to M
Tamb = 65 °C; Rth j-a = 120 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB910
8
handbook, full pagewidth
I FRM
(A)
6
δ = 0.05
4
0.1
0.2
2
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYD33U and V
Tamb = 65 °C; Rth j-a = 120 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
MGA869
2.4
a=3
P
(W)
2.5 2 1.57
a = 3 2.5 2 1.57
P
(W)
1.42
1.42
1.6
1.6
0.8
0.8
0
MLB904
2.4
handbook, halfpage
handbook, halfpage
0.8
0
0
1.6
0
0.8
1.6
I F(AV) (A)
I F(AV) (A)
BYD33D to M
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYD33U and V
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MGA861
200
handbook, halfpage
Tj
( oC)
Tj
( oC)
100
100
D
0
0
G
400
J
K
800
U
M
VR (V)
0
1200
BYD33D to M
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
0
1000
V
VR (V)
2000
BYD33U and V
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Sep 18
MLB907
200
handbook, halfpage
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
MGC522
8
MGC523
8
handbook, halfpage
handbook, halfpage
IF
(A)
IF
(A)
6
6
4
4
2
2
0
0
0
1
2
V F (V)
3
BYD33D to M
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
0
1
2
V F (V)
3
BYD33U and V
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
Fig.15 Forward current as a function of forward
voltage; maximum values.
MGA853
3
10halfpage
handbook,
MGA862
102
handbook, halfpage
IR
(µA)
Cd
(pF)
102
10
D, G, J
10
K, M
1
1
0
100
T j ( o C)
1
200
102
V R (V)
103
BYD33D to M
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.16 Reverse current as a function of junction
temperature; maximum values.
1996 Sep 18
10
Fig.17 Diode capacitance as a function of reverse
voltage; typical values.
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
MLB908
102
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)
7
50
10
2
3
1
1
102
10
V R (V)
103
MGA200
BYD33U and V
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.18 Diode capacitance as a function of reverse
voltage; typical values.
Fig.19 Device mounted on a printed-circuit board.
IF halfpage
ndbook,
dI F
dt
t rr
10% t
dI R
dt
100%
IR
MGC499
Fig.20 Reverse recovery definitions.
1996 Sep 18
10
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
handbook, full pagewidth
BYD33 series
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.21 Test circuit and reverse recovery time waveform and definition.
1996 Sep 18
11
MAM057
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
PACKAGE OUTLINE
5 max
handbook, full pagewidth
0.81
max
2.15
max
28 min
3.8 max
28 min
MBC051
Dimensions in mm.
The marking band indicates the cathode.
Fig.22 SOD81.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
12
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