Kexin AO3414 N-channel enhancement mode Datasheet

MOSFET
IC
SMD Type
N-Channel Enhancement Mode
Field Effect Transistor
KO3414(AO3414)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
(VGS = 4.5V)
RDS(ON)
63m
(VGS = 2.5V)
RDS(ON)
87m
(VGS = 1.8V)
1
0.55
50m
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
RDS(ON)
+0.1
1.3-0.1
+0.1
2.4-0.1
ID = 4.2A (VGS=4.5V)
0.4
3
VDS (V) = 20V
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
8
V
Continuous Drain
Current *1
TA=25
ID
3.2
TA=70
Pulsed Drain Current *2
Power Dissipation *1
TA=25
IDM
PD
Themal Resistance.Junction-to-Case
Junction and Storage Temperature Range
A
15
1.4
W
0.9
TA=70
Themal Resistance.Junction-to-Ambient *1
4.2
125
/W
RthJC
80
/W
TJ, TSTG
-55 to 150
RthJA
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
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1
MOSFET
IC
SMD Type
KO3414(AO3414)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
Testconditons
ID=250ìA, VGS=0V
Min
RDS(ON)
20
Forward Transconductance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
5
VDS=0V, VGS=
100
nA
1
V
A
8V
VDS=VGS ID=250ìA
0.4
VGS=4.5V, ID=4.2A
TJ=125
VGS=4.5V, VDS=5V
0.6
41
50
58
70
52
63
67
87
15
VDS=5V, ID=4.2A
A
11
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS= =10V, ID=4.2A
m
S
436
pF
66
pF
44
pF
3
6.2
nC
1.6
nC
Gate Drain Charge
Qgd
0.5
nC
Turn-On DelayTime
tD(on)
5.5
ns
Turn-On Rise Time
tr
6.3
ns
Turn-Off DelayTime
VGS=4.5V, VDS=10V, RL=2.7Ù,RGEN=6Ù
tD(off)
40
ns
Turn-Off FallTime
tf
12.7
ns
Body Diode Reverse Recovery Time
trr
IF=4A, dI/dt=100A/
s
12.3
ns
Body Diode Reverse Recovery Charge
Qrr
IF=4A, dI/dt=100A/
s
3.5
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
2
gFS
V
VDS=16V, VGS=0V ,TJ=55
VGS=1.8V, ID=3.2A
ID(ON)
Unit
1
VGS=2.5V, ID=3.7A
On state drain current
Max
VDS=16V, VGS=0V
VGS=4.5V, ID=4.2A
Static Drain-Source On-Resistance
Typ
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VSD
IS=1A,VGS=0V
0.76
nC
2
A
1
V
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