Intersil EL5175IY-T13 550mhz differential line receiver Datasheet

EL5175, EL5375
®
Data Sheet
May 10, 2007
550MHz Differential Line Receivers
Features
The EL5175 and EL5375 are single and triple high
bandwidth amplifiers designed to extract the difference
signal from noisy environments. They are primarily targeted
for applications such as receiving signals from twisted-pair
lines or any application where common mode noise injection
is likely to occur.
• Differential input range ±2.3V
FN7306.6
• 550MHz 3dB bandwidth
• 900V/µs slew rate
• 60mA maximum output current
• Single 5V or dual ±5V supplies
The EL5175 and EL5375 are stable for a gain of one and
requires two external resistors to set the voltage gain for
each channel.
• Low power, 9.6mA per channel
• Pb-free plus anneal available (RoHS compliant)
The output common mode level is set by the reference pin
(VREF), which has a -3dB bandwidth of over 450MHz.
Generally, this pin is grounded but it can be tied to any
voltage reference.
Applications
The output can deliver a maximum of ±60mA and is short
circuit protected to withstand a temporary overload
condition.
• VGA over twisted-pair
The EL5175 is available in the 8 Ld SOIC and 8 Ld MSOP
packages and the EL5375 in the 24 Ld QSOP package. All
are specified for operation over the full -40°C to +85°C
temperature range.
• Twisted-pair receivers
• Differential line receivers
• ADSL/HDSL receivers
• Differential to single-ended amplification
• Reception of analog signals in a noisy environment
Pinouts
EL5175
(8 LD SOIC, MSOP)
TOP VIEW
FB 1
IN+ 2
EL5375
(24 LD QSOP)
TOP VIEW
8 OUT
REF1 1
7 VS-
INP1 2
6 VS+
INN1 3
+
IN- 3
REF 4
5 EN
24 NC
+
-
22 OUT1
21 NC
NC 4
20 VSP
REF2 5
INP2 6
+
-
17 FB2
NC 8
16 OUT2
REF3 9
INN3 11
NC 12
1
19 VSN
18 NC
INN2 7
INP3 10
23 FB1
+
-
15 EN
14 FB3
13 OUT3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004, 2005, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
EL5175, EL5375
Ordering Information
PART NUMBER
PART MARKING
TAPE & REEL
PACKAGE
PKG. DWG. #
EL5175IS
5175IS
-
8 Ld SOIC (150 mil)
MDP0027
EL5175IS-T7
5175IS
7”
8 Ld SOIC (150 mil)
MDP0027
EL5175IS-T13
5175IS
13”
8 Ld SOIC (150 mil)
MDP0027
EL5175ISZ (Note)
5175ISZ
-
8 Ld SOIC (Pb-free) (150 mil)
MDP0027
EL5175ISZ-T7 (Note)
5175ISZ
7”
8 Ld SOIC (Pb-free) (150 mil)
MDP0027
EL5175ISZ-T13 (Note)
5175ISZ
13”
8 Ld SOIC (Pb-free) (150 mil)
MDP0027
EL5175IY
5
-
8 Ld MSOP (3.0mm)
MDP0043
EL5175IY-T7
5
7”
8 Ld MSOP (3.0mm)
MDP0043
EL5175IY-T13
5
13”
8 Ld MSOP (3.0mm)
MDP0043
EL5175IYZ (Note)
BAAAB
-
8 Ld MSOP (Pb-free) (3.0mm)
MDP0043
EL5175IYZ-T7 (Note)
BAAAB
7”
8 Ld MSOP (Pb-free) (3.0mm)
MDP0043
EL5175IYZ-T13 (Note)
BAAAB
13”
8 Ld MSOP (Pb-free) (3.0mm)
MDP0043
EL5375IU
EL5375IU
-
24 Ld QSOP (150 mil)
MDP0040
EL5375IU-T7
EL5375IU
7”
24 Ld QSOP (150 mil)
MDP0040
EL5375IU-T13
EL5375IU
13”
24 Ld QSOP (150 mil)
MDP0040
EL5375IUZ (Note)
EL5375IUZ
-
24 Ld QSOP (Pb-free) (150 mil)
MDP0040
EL5375IUZ-T7 (Note)
EL5375IUZ
7”
24 Ld QSOP (Pb-free) (150 mil)
MDP0040
EL5375IUZ-T13 (Note)
EL5375IUZ
13”
24 Ld QSOP (Pb-free) (150 mil)
MDP0040
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
2
FN7306.6
EL5175, EL5375
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage (VS+ to VS-) . . . . . . . . . . . . . . . . . . . . . . . . . . . .12V
Maximum Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±60mA
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +135°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, TA = +25°C, VIN = 0V, RL = 500Ω, RF = 0, RG = OPEN, CL = 2.7pF, Unless Otherwise
Specified.
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
BW
-3dB Bandwidth
AV =1, CL = 2.7pF
550
MHz
AV =2, RF = 806, CL = 2.7pF
190
MHz
AV =10, RF = 806, CL = 2.7pF
20
MHz
BW
± 0.1dB Bandwidth
AV =1, CL = 2.7pF
60
MHz
SR
Slew Rate
VOUT = 3VP-P, 20% to 80%, RL = 100Ω
600
V/µs
VOUT = 3VP-P, 20% to 80%, RL = 500Ω
900
V/µs
VOUT = 2VP-P
10
ns
tSTL
Settling Time to 0.1%
tOVR
Output Overdrive Recovery time
20
ns
GBWP
Gain Bandwidth Product
200
MHz
VREFBW (-3dB) VREF -3dB Bandwidth
AV =1, CL = 2.7pF
450
MHz
VREFSR
VREF Slew Rate
VOUT = 2VP-P, 20% to 80%
1000
V/µs
VN
Input Voltage Noise
at f = 10kHz
21
nV/√Hz
IN
Input Current Noise
at f = 10kHz
2.7
pA/√Hz
HD2
Second Harmonic Distortion
VOUT = 1VP-P, 5MHz
-70
dBc
HD2
Second Harmonic Distortion
VOUT = 1VP-P, 5MHz
-66
dBc
HD3
Third Harmonic Distortion
VOUT = 1VP-P, 5MHz
-94
dBc
HD3
Third Harmonic Distortion
VOUT = 1VP-P, 5MHz
-84
dBc
dG
Differential Gain at 3.58MHz
RL = 150Ω , AV =2
0.1
%
dθ
Differential Phase at 3.58MHz
RL = 150Ω , AV =2
0.1
°
eS
Channel Separation (EL5375)
at f = 100kHz
90
dB
EL5175
-3
±40
mV
EL5375
-3
±30
mV
-12.5
-6
µA
INPUT CHARACTERISTICS
VOS
Input Referred Offset Voltage
IIN
Input Bias Current (VIN, VINB, VREF)
RIN
Differential Input Resistance
CIN
Differential Input Capacitance
DMIR
Differential Mode Input Range
±2.1
CMIR
Common Mode Input Range at VIN+,
VIN-
VREFIN
Reference Input Voltage Range
3
-25
VIN+ = VIN- = 0V
150
kΩ
1
pF
±2.3
±2.5
V
-4.3
+3.3
V
-3.6
3.3
V
FN7306.6
EL5175, EL5375
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, TA = +25°C, VIN = 0V, RL = 500Ω, RF = 0, RG = OPEN, CL = 2.7pF, Unless Otherwise
Specified. (Continued)
DESCRIPTION
CONDITIONS
MIN
TYP
75
95
MAX
UNIT
CMRR
Input Common Mode Rejection Ratio
VIN = ±2.5V
dB
Gain
Gain Accuracy
EL5175, VIN = 1V
0.979
0.994
1.009
V
EL5375, VIN = 1V
0.977
0.992
1.007
V
Positive Output Voltage Swing
RL = 500Ω to GND
3.3
3.54
Negative Output Voltage Swing
RL = 500Ω to GND
IOUT(Max)
Maximum Output Current
RL = 10Ω
ROUT
Output Impedance
OUTPUT CHARACTERISTICS
VOUT
-3.95
±40
V
-3.6
V
±67
mA
130
mΩ
SUPPLY
VSUPPLY
Supply Operating Range
IS (on)
Power Supply Current Per Channel Enabled
IS (off)+
11
V
9.6
11
mA
Positive Power Supply Current - Disabled EN pin tied to 4.8V, EL5175
80
100
µA
EN pin tied to 4.8V, EL5375
1.7
5
µA
-150
-120
-90
µA
45
56
dB
IS (off)-
Negative Power Supply Current Disabled
PSRR
Power Supply Rejection Ratio
VS+ to VS-
4.75
8
VS from ±4.5V to ±5.5V
ENABLE
tEN
Enable Time
80
ns
tDS
Disable Time
1.2
µs
VIH
EN Pin Voltage for Power-up
VIL
EN Pin Voltage for Shut-down
IIH-EN
EN Pin Input Current High Per Channel
At VEN = 5V
IIL-EN
EN Pin Input Current Low Per Channel
At VEN = 0V
4
VS+ - 1.5
VS+ - 0.5
V
40
-10
V
-3
60
µA
µA
FN7306.6
EL5175, EL5375
Pin Descriptions
EL5175
EL5375
PIN NAME
PIN FUNCTION
1
FB
Feedback input
2
IN+
Non-inverting input
3
IN-
Inverting input
4
REF
5
EN
Enabled when this pin is floating or the applied voltage ≤ VS+ - 1.5
6
VS+
Positive supply voltage
7
VS-
Negative supply voltage
8
OUT
Output voltage
Sets the common mode output voltage level to VREF
1, 5, 9
REF1, 2, 3
Reference input, controls common-mode output voltage
2, 6, 10
INP1, 2, 3
Non-inverting inputs
3, 7, 11
INN1, 2, 3
Inverting inputs
4, 8, 12, 18, 21, 24
NC
13, 16, 22
OUT1, 2, 3
14, 17, 23
FB1, 2, 3
15
EN
19
VSN
Negative supply
20
VSP
Positive supply
5
No connect, grounded for best crosstalk performance
Non-inverting outputs
Feedback from outputs
Enabled when this pin is floating or the applied voltage ≤ VS+ - 1.5
FN7306.6
Connection Diagrams
RG
RF=0Ω
-5V
1 FB
VOUT
OUT 8
2 INP
VSN 7
INN
3 INN
VSP 6
REF
4 REF
EN 5
RL
500Ω
6
INP
CL
2.7pF
RS2
50Ω
RS2
50Ω
RS3
50Ω
EL5175
EN
+5V
REF1
1 REF1
NC 24
INP1
2 INP1
FB1 23
INN1
3 INN1
OUT1 22
+5V
RF
OUT1
CL1
2.7pF
NC 21
4 NC
REF2
5 REF2
VSP 20
INP2
6 INP2
VSN 19
INN2
7 INN2
NC 18
RL1
500Ω
RG
RF
FB2 17
8 NC
REF3
9 REF3
OUT2
OUT2 16
INP3
10 INP3
EN 15
INN3
11 INN3
FB3 14
RL2
500Ω
RG
RF
RSP1
50Ω
RSN1
50Ω
RSR1
50Ω
RSP2
50Ω
RSN2
50Ω
RSR2
50Ω
RSP3
50Ω
RSN3
50Ω
RSR3
50Ω
12 NC
OUT3
OUT3 13
EL5175
-5V
ENABLE
CL2
2.7pF
CL3
2.7pF
RL3
500Ω
EL5175, EL5375
RG
FN7306.6
EL5175, EL5375
4
4
AV=1
RL=500Ω
2 CL=2.7pF
AV=1
RL=100Ω
2 CL=2.7pF
MAGNITUDE (dB)
MAGNITUDE (dB)
Typical Performance Curves
VS=±5V
0
VS=±2.5V
-2
-4
-6
1M
0
VS=±5V
-4
10M
100M
-6
1M
1G
FREQUENCY (Hz)
VS=±5V
RL=500Ω
3 AV=1
MAGNITUDE (dB)
NORMALIZED GAIN (dB)
5
VS=±5V
RL=500Ω
2 CL=2.7pF
AV=1
0
AV=5
AV=10
AV=2
-4
100M
1
-1
-5
1M
1G
CL=2.7pF
CL=0pF
10M
100M
1G
FREQUENCY (Hz)
FIGURE 3. FREQUENCY RESPONSE vs VARIOUS GAIN
FIGURE 4. FREQUENCY RESPONSE vs CL
5
4
VS=±2.5V
RL=500Ω
3 AV=1
CL=15pF
NORMALIZED GAIN (dB)
MAGNITUDE (dB)
CL=15pF
-3
10M
1G
CL=10pF
FREQUENCY (Hz)
CL=10pF
1
-1
CL=2.7pF
-3
-5
1M
100M
FIGURE 2. FREQUENCY RESPONSE vs SUPPLY VOLTAGE
4
-6
1M
10M
FREQUENCY (Hz)
FIGURE 1. FREQUENCY RESPONSE vs SUPPLY VOLTAGE
-2
VS=±2.5V
-2
CL=0pF
10M
100M
FREQUENCY (Hz)
FIGURE 5. FREQUENCY RESPONSE vs CL
7
1G
VS=±5V
RL=500Ω
2 AV=2
CL=2.7pF
RF=1kΩ
RF=806Ω
0
-2
RF=500Ω
RF=200Ω
-4
-6
1M
10M
100M
1G
FREQUENCY (Hz)
FIGURE 6. FREQUENCY RESPONSE FOR VARIOUS RF
FN7306.6
EL5175, EL5375
4
60
90
RL=500Ω
AV=1
2 CL=2.7pF
40
0
20
-90
0
-180
-20
-270
0
VS=±5V
VS=±2.5V
-2
-4
-6
1M
10M
100M
1G
-40
10K
100K
FREQUENCY (Hz)
1M
10M
PHASE (°)
(Continued)
GAIN (dB)
NORMALIZED GAIN (dB)
Typical Performance Curves
-360
1G
100M
FREQUENCY (Hz)
FIGURE 7. FREQUENCY RESPONSE FOR VREF
FIGURE 8. OPEN LOOP GAIN
100
30
10
PSRR (dB)
IMPEDANCE (Ω)
10
-10
-30
PSRR+
-50
1
-70
0.1
10K
100K
1M
10M
PSRR-
-90
10K
100M
100K
FIGURE 9. OUTPUT IMPEDANCE vs FREQUENCY
100M
VOLTAGE NOISE (nV/√Hz),
CURRENT NOISE (pA/√Hz)
1K
100
CMRR (dB)
10M
FIGURE 10. PSRR vs FREQUENCY
120
80
60
40
20
-90
1K
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
10K
100K
1M
10M
100M
FREQUENCY (Hz)
FIGURE 11. CMRR vs FREQUENCY
8
1G
100
EN
10
IN
1
10
100
1K
10K
100K
1M
10M
FREQUENCY (Hz)
FIGURE 12. VOLTAGE AND CURRENT NOISE vs FREQUENCY
FN7306.6
EL5175, EL5375
Typical Performance Curves
(Continued)
0
-40
VS=±5V
f=5MHz
-50 R =500Ω
L
DISTORTION (dB)
GAIN (dB)
-20
-40
-60
CH1↔CH2, CH2↔CH3
CH1↔CH3
-80
-100
100K
2)
(AV=
HD2
-60
=1)
HD2 (AV
-70
=2)
HD3 (AV
-80
-90
H
(
D3
=1
AV
)
-100
1M
10M
100M
1
1G
3
2
7
6
VOP-P (V)
FREQUENCY (Hz)
FIGURE 13. CHANNEL ISOLATION vs FREQUENCY
(EL5375 ONLY)
FIGURE 14. HARMONIC DISTORTION vs OUTPUT VOLTAGE
-50
-50
-60
HD2 (AV=1)
-70
H D3
-80
(AV =
2)
VS=±5V
-90 f=5MHz
HD3 (AV=1)
VOP-P=1V (AV=1)
VOP-P=2V (AV=2)
-100
100 200 300 400 500 600 700 800 900
2
HD
-60
HD2 (AV=2)
DISTORTION (dB)
DISTORTION (dB)
5
4
=2)
(A V
=1)
HD2 (AV
-70
3
HD
=2)
(A V
-80
HD
=1)
3 (A V
VS=±5V
RL=500Ω
VOP-P=1V (AV=1)
VOP-P=2V (AV=2)
-90
-100
1K
0
RLOAD (Ω)
FIGURE 15. HARMONIC DISTORTION vs LOAD RESISTANCE
50mV/DIV
5
10
15
20
25
30
35
40
RLOAD (Ω)
FIGURE 16. HARMONIC DISTORTION vs FREQUENCY
0.5V/DIV
10ns/DIV
FIGURE 17. SMALL SIGNAL TRANSIENT RESPONSE
9
10ns/DIV
FIGURE 18. LARGE SIGNAL TRANSIENT RESPONSE
FN7306.6
EL5175, EL5375
Typical Performance Curves
(Continued)
M=100ns
CH1=200mV/DIV
CH2=5V/DIV
M=400ns
CH1=200mV/DIV
CH2=5V/DIV
CH1
CH1
CH2
CH2
100ns/DIV
400ns/DIV
FIGURE 19. ENABLED RESPONSE
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1
870mW
QSOP24
θJA=115°C/W
0.8
625mW
0.6
SO8
θJA=160°C/W
0.4 486mW
MSOP8
θJA=206°C/W
0.2
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1.4
POWER DISSIPATION (W)
POWER DISSIPATION (W)
1.2
FIGURE 20. DISABLED RESPONSE
0
1.2 1.136W
QSOP24
θJA=88°C/W
1 909mW
SO8
θJA=110°C/W
0.8 870mW
0.6
MSOP8
θJA=115°C/W
0.4
0.2
0
0
25
50
75 85 100
125
150
0
AMBIENT TEMPERATURE (°C)
25
50
75 85 100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 21. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 22. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Simplified Schematic
VS+
I1
I2
RD1
I3
I4
RD2
R3
R4
Q8
VIN+
Q1
VINQ2
VREF
Q3
FB
Q4
Q7
VB1
Q9
x1
VOUT
Q6
25
VB2
CC
R1
R2
VS-
10
FN7306.6
EL5175, EL5375
Description of Operation and Application
Information
Product Description
The EL5175 and EL5375 are wide bandwidth, low power
and single/differential ended to single ended output
amplifiers. The EL5175 is a single channel differential to
single ended amplifier. The EL5375 is a triple channel
differential to single ended amplifier. The EL5175 and
EL5375 are internally compensated for closed loop gain of
+1 of greater. Connected in gain of 1 and driving a 500Ω
load, the EL5175 and EL5375 have a -3dB bandwidth of
550MHz. Driving a 150Ω load at gain of 2, the bandwidth is
about 130MHz. The bandwidth at the REF input is about
450MHz. The EL5175 and EL5375 is available with a power
down feature to reduce the power while the amplifier is
disabled.
Input, Output, and Supply Voltage Range
The EL5175 and EL5375 have been designed to operate
with a single supply voltage of 5V to 10V or a split supplies
with its total voltage from 5V to 10V. The amplifiers have an
input common mode voltage range from -4.3V to 3.3V for
±5V supply. The differential mode input range (DMIR)
between the two inputs is about from -2.3V to +2.3V. The
input voltage range at the REF pin is from -3.6V to 3.3V. If
the input common mode or differential mode signal is outside
the above-specified ranges, it will cause the output signal
distorted.
The output of the EL5175 and EL5375 can swing from -3.9V
to 3.5V at 500Ω load at ±5V supply. As the load resistance
becomes lower, the output swing is reduced respectively.
Over All Gain Settings
The gain setting for the EL5175 and EL5375 is similar to the
conventional operational amplifier. The output voltage is
equal to the difference of the inputs plus VREF and then
times the gain.
RF ⎞
⎛
V O = ( V IN + – V IN - + V REF ) × ⎜ 1 + --------⎟
R
⎝
G⎠
EN
VIN+
VIN-
+
Σ
VREF
FB
G/B
+
RF
VO
Choice of Feedback Resistor and Gain Bandwidth
Product
For applications that require a gain of +1, no feedback
resistor is required. Just short the OUT+ pin to FBP pin and
OUT- pin to FBN pin. For gains greater than +1, the
feedback resistor forms a pole with the parasitic capacitance
at the inverting input. As this pole becomes smaller, the
amplifier's phase margin is reduced. This causes ringing in
the time domain and peaking in the frequency domain.
Therefore, RF has some maximum value that should not be
exceeded for optimum performance. If a large value of RF
must be used, a small capacitor in the few Pico farad range
in parallel with RF can help to reduce the ringing and
peaking at the expense of reducing the bandwidth.
The bandwidth of the EL5175 and EL5375 depends on the
load and the feedback network. RF and RG appear in
parallel with the load for gains other than +1. As this
combination gets smaller, the bandwidth falls off.
Consequently, RF also has a minimum value that should not
be exceeded for optimum bandwidth performance. For gain
of +1, RF = 0 is optimum. For the gains other than +1,
optimum response is obtained with RF between 500Ω to
1kΩ. For AV = 2 and RF = RG = 806Ω, the BW is about
190MHz and the frequency response is very flat.
The EL5175 and EL5375 have a gain bandwidth product of
200MHz. For gains ≥5, its bandwidth can be predicted by the
following equation:
Gain × BW = 200MHz
Driving Capacitive Loads and Cables
The EL5175 and EL5375 can drive 15pF capacitance in
parallel with 500Ω load to ground with less than 4.5dB of
peaking at gain of +1. If less peaking is desired in
applications, a small series resistor (usually between 5Ω to
50Ω) can be placed in series with each output to eliminate
most peaking. However, this will reduce the gain slightly. If
the gain setting is greater than 1, the gain resistor RG can
then be chosen to make up for any gain loss which may be
created by the additional series resistor at the output.
When used as a cable driver, double termination is always
recommended for reflection-free performance. For those
applications, a back-termination series resistor at the
amplifier's output will isolate the amplifier from the cable and
allow extensive capacitive drive. However, other applications
may have high capacitive loads without a back-termination
resistor. Again, a small series resistor at the output can help
to reduce peaking.
Disable/Power-Down
RG
FIGURE 23.
11
The EL5175 and EL5375 can be disabled and placed its
outputs in a high impedance state. The turn off time is about
1.2µs and the turn on time is about 80ns. When disabled, the
amplifier's supply current is reduced to 80µA for IS+ and
FN7306.6
EL5175, EL5375
120µA for IS- typically, thereby effectively eliminating the
power consumption. The amplifier's power down can be
controlled by standard CMOS signal levels at the ENABLE
pin. The applied logic signal is relative to VS+ pin. Letting the
EN pin float or applying a signal that is less than 1.5V below
VS+ will enable the amplifier. The amplifier will be disabled
when the signal at EN pin is above VS+ - 0.5V. If a TTL
signal is used to control the enabled/disabled function,
Figure 22 could be used to convert the TTL signal to CMOS
signal.
V OUT
PD MAX = V S × I SMAX + ( V S + – V OUT ) × -------------------- × i
R
LOAD
For sinking:
PD MAX = [ V S × I SMAX + ( V OUT – V S - ) × I LOAD ] × i
Where:
5V
• VS = Total supply voltage
10K
EN
1K
For sourcing:
• ISMAX = Maximum quiescent supply current per channel
• VOUT = Maximum output voltage of the application
CMOS/TTL
• RLOAD = Load resistance
• ILOAD = Load current
FIGURE 24.
Output Drive Capability
The EL5175 and EL5375 have internal short circuit
protection. Its typical short circuit current is ±67mA. If the
output is shorted indefinitely, the power dissipation could
easily increase such that the part will be destroyed.
Maximum reliability is maintained if the output current never
exceeds ±60mA. This limit is set by the design of the internal
metal interconnections.
Power Dissipation
With the high output drive capability of the EL5175 and
EL5375. It is possible to exceed the 135°C absolute
maximum junction temperature under certain load current
conditions. Therefore, it is important to calculate the
maximum junction temperature for the application to
determine if the load conditions or package types need to be
modified for the amplifier to remain in the safe operating
area.
The maximum power dissipation allowed in a package is
determined according to:
T JMAX – T AMAX
PD MAX = --------------------------------------------Θ JA
• TJMAX = Maximum junction temperature
• TAMAX = Maximum ambient temperature
• θJA = Thermal resistance of the package
• i = Number of channels
By setting the two PDMAX equations equal to each other, we
can solve the output current and RLOAD to avoid the device
overheat.
Power Supply Bypassing and Printed Circuit
Board Layout
As with any high frequency device, a good printed circuit
board layout is necessary for optimum performance. Lead
lengths should be as sort as possible. The power supply pin
must be well bypassed to reduce the risk of oscillation. For
normal single supply operation, where the VS- pin is
connected to the ground plane, a single 4.7µF tantalum
capacitor in parallel with a 0.1µF ceramic capacitor from VS+
to GND will suffice. This same capacitor combination should
be placed at each supply pin to ground if split supplies are to
be used. In this case, the VS- pin becomes the negative
supply rail.
For good AC performance, parasitic capacitance should be
kept to minimum. Use of wire wound resistors should be
avoided because of their additional series inductance. Use
of sockets should also be avoided if possible. Sockets add
parasitic inductance and capacitance that can result in
compromised performance. Minimizing parasitic capacitance
at the amplifier's inverting input pin is very important. The
feedback resistor should be placed very close to the
inverting input pin. Strip line design techniques are
recommended for the signal traces.
Assume the REF pin is tired to GND for VS = ±5V
application, the maximum power dissipation actually
produced by an IC is the total quiescent supply current times
the total power supply voltage, plus the power in the IC due
to the load, or:
12
FN7306.6
EL5175, EL5375
Typical Applications
0Ω
50
VFB
50Ω
VIN
EL5173/
EL5373
50
VINB
EL5175/
EL5375
VOUT
50Ω
ZO = 100Ω
VREF
FIGURE 25. TWISTED PAIR CABLE RECEIVER
As the signal is transmitted through a cable, the high
frequency signal will be attenuated. One way to compensate
this loss is to boost the high frequency gain at the receiver
side.
R3
R1
R2
Gain
(dB)
C1
1 + R2 / R 1
VFB
50Ω
VIN
VINB
ZO = 100Ω
EL5175/
EL5375
VOUT
1 + R2 / (R1 + R3)
50Ω
VREF
fA
fC
f
FIGURE 26. COMPENSATED LINE RECEIVER
Level Shifter and Signal Summer
The EL5175 and EL5375 contains two pairs of differential
pair input stages. It makes the inputs are all high impedance
inputs. To take advantage of the two high impedance inputs,
the EL5175 and EL5375 can be used as a signal summer to
add two signals together. Like, one signal can be applied to
VIN+, the second signal can be applied to REF and VIN- is
ground. The output is equal to:
V O = ( V IN + + V REF ) × Gain
Also, the EL5175 and EL5375 can be used as a level shifter
by applying a level control signal to the REF input.
13
FN7306.6
EL5175, EL5375
Small Outline Package Family (SO)
A
D
h X 45°
(N/2)+1
N
A
PIN #1
I.D. MARK
E1
E
c
SEE DETAIL “X”
1
(N/2)
B
L1
0.010 M C A B
e
H
C
A2
GAUGE
PLANE
SEATING
PLANE
A1
0.004 C
0.010 M C A B
L
b
0.010
4° ±4°
DETAIL X
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
INCHES
SYMBOL
SO-14
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)
TOLERANCE
NOTES
A
0.068
0.068
0.068
0.104
0.104
0.104
0.104
MAX
-
A1
0.006
0.006
0.006
0.007
0.007
0.007
0.007
±0.003
-
A2
0.057
0.057
0.057
0.092
0.092
0.092
0.092
±0.002
-
b
0.017
0.017
0.017
0.017
0.017
0.017
0.017
±0.003
-
c
0.009
0.009
0.009
0.011
0.011
0.011
0.011
±0.001
-
D
0.193
0.341
0.390
0.406
0.504
0.606
0.704
±0.004
1, 3
E
0.236
0.236
0.236
0.406
0.406
0.406
0.406
±0.008
-
E1
0.154
0.154
0.154
0.295
0.295
0.295
0.295
±0.004
2, 3
e
0.050
0.050
0.050
0.050
0.050
0.050
0.050
Basic
-
L
0.025
0.025
0.025
0.030
0.030
0.030
0.030
±0.009
-
L1
0.041
0.041
0.041
0.056
0.056
0.056
0.056
Basic
-
h
0.013
0.013
0.013
0.020
0.020
0.020
0.020
Reference
-
16
20
24
28
Reference
-
N
SO-8
SO16
(0.150”)
8
14
16
Rev. M 2/07
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
14
FN7306.6
EL5175, EL5375
Mini SO Package Family (MSOP)
0.25 M C A B
D
MINI SO PACKAGE FAMILY
(N/2)+1
N
E
MDP0043
A
E1
MILLIMETERS
PIN #1
I.D.
1
B
(N/2)
e
H
C
SEATING
PLANE
0.10 C
N LEADS
SYMBOL
MSOP8
MSOP10
TOLERANCE
NOTES
A
1.10
1.10
Max.
-
A1
0.10
0.10
±0.05
-
A2
0.86
0.86
±0.09
-
b
0.33
0.23
+0.07/-0.08
-
c
0.18
0.18
±0.05
-
D
3.00
3.00
±0.10
1, 3
E
4.90
4.90
±0.15
-
E1
3.00
3.00
±0.10
2, 3
e
0.65
0.50
Basic
-
L
0.55
0.55
±0.15
-
L1
0.95
0.95
Basic
-
N
8
10
Reference
-
0.08 M C A B
b
Rev. D 2/07
NOTES:
1. Plastic or metal protrusions of 0.15mm maximum per side are not
included.
L1
2. Plastic interlead protrusions of 0.25mm maximum per side are
not included.
A
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994.
c
SEE DETAIL "X"
A2
GAUGE
PLANE
L
A1
0.25
3° ±3°
DETAIL X
15
FN7306.6
EL5175, EL5375
Quarter Size Outline Plastic Packages Family (QSOP)
MDP0040
A
QUARTER SIZE OUTLINE PLASTIC PACKAGES FAMILY
D
(N/2)+1
N
INCHES
SYMBOL QSOP16 QSOP24 QSOP28 TOLERANCE NOTES
E
PIN #1
I.D. MARK
E1
1
(N/2)
A
0.068
0.068
0.068
Max.
-
A1
0.006
0.006
0.006
±0.002
-
A2
0.056
0.056
0.056
±0.004
-
b
0.010
0.010
0.010
±0.002
-
c
0.008
0.008
0.008
±0.001
-
D
0.193
0.341
0.390
±0.004
1, 3
E
0.236
0.236
0.236
±0.008
-
E1
0.154
0.154
0.154
±0.004
2, 3
e
0.025
0.025
0.025
Basic
-
L
0.025
0.025
0.025
±0.009
-
L1
0.041
0.041
0.041
Basic
-
N
16
24
28
Reference
-
B
0.010
C A B
e
H
C
SEATING
PLANE
0.007
0.004 C
b
C A B
Rev. F 2/07
NOTES:
L1
A
1. Plastic or metal protrusions of 0.006” maximum per side are not
included.
2. Plastic interlead protrusions of 0.010” maximum per side are not
included.
c
SEE DETAIL "X"
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994.
0.010
A2
GAUGE
PLANE
L
A1
4°±4°
DETAIL X
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
16
FN7306.6
Similar pages