Siemens BC858C Pnp silicon af transistors (for af input stages and driver applications high current gain low collector-emitter saturation voltage) Datasheet

PNP Silicon AF Transistors
BC 856 ... BC 860
Features
●
●
●
●
●
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
Type
Marking
Ordering Code
(tape and reel)
BC 856 A
BC 856 B
BC 857 A
BC 857 B
BC 857 C
BC 858 A
BC 858 B
BC 858 C
BC 859 A
BC 859 B
BC 859 C
BC 860 B
BC 860 C
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
Q62702-C1773
Q62702-C1886
Q62702-C1850
Q62702-C1688
Q62702-C1851
Q62702-C1742
Q62702-C1698
Q62702-C1507
Q62702-C1887
Q62702-C1774
Q62702-C1761
Q62702-C1888
Q62702-C1889
1)For
Pin Configuration
1
2
3
B
E
C
Package1)
SOT-23
detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BC 856 ... BC 860
Maximum Ratings
Parameter
Symbol
Unit
BC 856
Values
BC 857
BC 860
BC 858
BC 859
Collector-emitter voltage
VCE0
65
45
30
Collector-base voltage
VCB0
80
50
30
Collector-emitter voltage
VCES
80
50
30
Emitter-base voltage
VEB0
5
5
5
Collector current
IC
100
Peak collector current
ICM
200
Peak base current
IBM
200
Peak emitter current
IEM
200
Total power dissipation, TS = 71 ˚C
Ptot
330
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
V
mA
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Rth JA
≤
310
Junction - soldering point
Rth JS
≤
240
1)Package
mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
K/W
BC 856 ... BC 860
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
65
45
30
–
–
–
–
–
–
80
50
30
–
–
–
–
–
–
80
50
30
–
–
–
–
–
–
5
–
–
–
–
1
–
15
4
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CE0
Collector-base breakdown voltage
IC = 10 µA
BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CB0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CES
Emitter-base breakdown voltage
IE = 1 µA
V(BR)EB0
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
DC current gain
IC = 10 µA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
IC = 2 mA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
hFE
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(on)
1)Pulse
test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
V
nA
µA
–
–
–
–
140
250
480
–
–
–
125
220
420
180
290
520
250
475
800
–
–
75
250
300
650
–
–
700
850
–
–
600
–
650
–
750
820
mV
BC 856 ... BC 860
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
fT
–
250
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
3
–
pF
Input capacitance
VCB = 0.5 V, f = 1 MHz
Cibo
–
8
–
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
h11e
Open-circuit reverse voltage transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
h12e
Short-circuit forward current transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
h21e
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
h22e
Noise figure
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 30 Hz … 15 kHz
BC 859
BC 860
BC 859
f = 1 kHz, ∆ f = 200 Hz
BC 860
F
Equivalent noise voltage
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 10 Hz … 50 Hz
BC 860
Vn
Semiconductor Group
kΩ
–
–
–
–
–
–
10– 4
–
–
–
1.5
2.0
3.0
–
–
–
–
–
–
–
200
330
600
–
–
–
µS
–
–
–
4
2.7
4.5
8.7
18
30
60
–
–
–
dB
–
–
–
–
1.2
1.0
1.0
1.0
4
3
4
4
–
–
0.110
µV
BC 856 ... BC 860
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group
5
BC 856 ... BC 860
Collector cutoff current ICB0 = f (TA)
VCB = 30 V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
DC current gain hFE = f (IC)
VCE = 5 V
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
Semiconductor Group
6
BC 856 ... BC 860
h parameter he = f (IC) normalized
VCE = 5 V
h parameter he = f (VCE) normalized
IC = 2 mA
Noise figure F = f (VCE)
IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz
Noise figure F = f (f)
IC = 0.2 mA, RS = 2 kΩ, VCE = 5 V
Semiconductor Group
7
BC 856 ... BC 860
Noise figure F = f (IC)
VCE = 5 V, f = 120 Hz
Noise figure F = f (IC)
VCE = 5 V, f = 1 kHz
Noise figure F = f (IC)
VCE = 5 V, f = 10 kHz
Semiconductor Group
8
Similar pages