2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 60±10 V Emitter-base voltage VEBO 8 V DC IC 1 Pulse ICP 3 IB 0.5 Collector current Base current DC Collector power dissipation t = 10 s Junction temperature Storage temperature range PC (Note 1) 1.0 2.5 A A W Tj 150 °C Tstg −55 to 150 °C Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≒5kΩ ≒300Ω Emitter 1 2006-11-21 2SD2686 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Switching time Figure 1. Max Unit ⎯ ⎯ 10 μA ICEO VCE = 45 V, IE = 0 ⎯ ⎯ 10 μA IEBO VEB = 8 V, IC = 0 0.80 ⎯ 4.0 mA V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V hFE VCE = 2 V, IC = 1.0 A 2000 ⎯ ⎯ VCE (sat) (1) IC = 0.5 A, IB = 1 mA ⎯ ⎯ 1.2 V VCE (sat) (2) IC = 1.0 A, IB = 1 mA ⎯ ⎯ 1.5 V VBE (sat) IC = 1.0 A, IB = 1 mA ⎯ ⎯ 2.0 V ⎯ 0.4 ⎯ ⎯ 4.0 ⎯ ⎯ 0.6 ⎯ DC current gain Base-emitter saturation voltage Typ. VCB = 45 V, IE = 0 Emitter cutoff current Collector-emitter saturation voltage Min ICBO Collector cutoff current Collector-emitter breakdown voltage Test Condition Rise time ton Storage time tstg Fall time tf See Figure 1 circuit diagram. VCC ∼ − 30 V, RL = 30 Ω Switching Time Test Circuit & Timing Chart μs Marking VCC≒30V 20μs Input 30Ω Part No. (or abbreviation code) 3 Output Lot No. H A line indicates lead (Pb)-free package or lead (Pb)-free finish. Duty cycle＜1％ 2 2006-11-21 2SD2686 IC – VCE IC – VBE 3.2 3.2 3 1 0.5 Common emitter Common emitter VCE = 2 V (A) 0.3 2.4 2.4 Collector current IC Collector current IC (A) Ta = 25°C 0.22 1.6 0.20 0.8 1.6 0.8 25 Ta = 100°C −55 IB = 0.18 mA 0 0 0 2 4 6 Collector-emitter voltage 0 0 8 0.8 VCE (V) 1.6 2.4 Base-emitter voltage hFE – IC VBE (V) VCE – IB 10000 2.4 Common emitter VCE = 2 V 3000 Collector-emitter voltage Ta = 100°C 25 1000 −55 500 300 100 0.03 0.05 0.1 0.3 0.5 1 Collector current IC 3 5 10 Ta = 25°C 2.0 1.6 2.5 1.5 1.2 IC = 3.0 A 2.0 1.0 0.5 0.8 0.1 0.4 ) DC current gain hFE VCE (V) Common emitter 5000 3.2 0 0.1 (A) 0.3 1 3 10 30 100 300 500 Base current IB (mA) VCE (sat) – IC VBE (sat) – IC 10 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 10 IC/IB = 500 5 3 1 Ta = −55°C 25 100 0.5 0.3 0.1 0.3 0.5 1 Collector current IC 3 5 Common emitter 3 Ta = −55°C 1 (A) 25 100 0.5 0.3 0.1 10 IC/IB = 500 5 0.3 0.5 1 Collector current IC 3 3 5 10 (A) 2006-11-21 2SD2686 rth – tw Transient thermal resistance rth (°C/W) 1000 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe Operating Area 10 IC max (pulse) * 1 ms* (A) 1 IC max (continuous) 10 s* 100 ms* DC operation (Ta = 25°C) *: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms*, 10 s* and DC operation will be different when the devices aren’t mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 2 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 10 VCEO max Collector current IC 10 ms* 100 Collector-emitter voltage VCE (V) 4 2006-11-21 2SD2686 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21