Central CMPD2005S Surface mount dual, in series high voltage silicon switching diode Datasheet

CMPD2005S
CMPD2005SG*
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2005S
and CMPD2005SG each contain two (2) High Voltage
Silicon Switching Diodes, manufactured by the epitaxial
planar process, epoxy molded in a SOT-23 surface
mount package, designed for applications requiring
high voltage capability.
MARKING CODES:
CMPD2005S:
DB5
CMPD2005SG*: 5SG
* Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25 °C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
IR
BVR
VF
VF
VF
CT
trr
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
ΘJA
300
350
200
225
625
4.0
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VR=280V
100
VR=280V, TA=150°C
100
IR=100μA
350
IF=20mA
0.87
IF=100mA
1.0
IF=200mA
1.25
VR=0, f=1.0MHz
5.0
IR=IF=30mA, Rec. to 3.0mA, RL=100Ω
50
UNITS
nA
μA
V
V
V
V
pF
ns
R3 (25-January 2010)
CMPD2005S
CMPD2005SG*
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODES:
CMPD2005S:
DB5
CMPD2005SG*: 5SG
* Device is Halogen Free by design
R3 (25-January 2010)
w w w. c e n t r a l s e m i . c o m
Similar pages