Infineon BCX68 Npn silicon af transistor Datasheet

BCX68
NPN Silicon AF Transistors
1
For general AF applications
2
High collector current
3
High current gain
Low collector-emitter saturation voltage
Complementary type: BCX69 (PNP)
2
VPS05162
Type
Marking
Pin Configuration
Package
BCX68
CA
1=B
2=C
3=E
SOT89
BCX68-10
CB
1=B
2=C
3=E
SOT89
BCX68-16
CC
1=B
2=C
3=E
SOT89
BCX68-25
CD
1=B
2=C
3=E
SOT89
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
20
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
5
DC collector current
IC
1
Peak collector current
ICM
2
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 130 °C
Ptot
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
A
mA
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
20
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Jun-29-2001
BCX68
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
20
-
-
V(BR)CBO
25
-
-
V(BR)EBO
5
-
-
ICBO
-
-
100
nA
ICBO
-
-
100
µA
hFE
50
-
-
BCX68
85
-
375
BCX68-10
85
100
160
BCX68-16
100
160
250
BCX68-25
160
250
375
60
-
-
-
-
0.5
IC = 5 mA, VCE = 10 V
-
0.6
-
IC = 1 A, VCE = 1 V
-
-
1
-
100
-
Characteristics
Collector-emitter breakdown voltage
V
IC = 30 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
DC current gain 1)
-
IC = 5 mA, VCE = 10 V
DC current gain 1)
IC = 500 mA, VCE = 1 V
hFE
DC current gain 1)
hFE
IC = 1 A, VCE = 1 V
Collector-emitter saturation voltage1)
VCEsat
V
IC = 1 A, IB = 100 mA
Base-emitter voltage 1)
VBE(ON)
AC Characteristics
Transition frequency
fT
MHz
IC = 100 mA, VCE = 5 V, f = 20 MHz
1) Pulse test: t ≤=300µs, D = 2%
2
Jun-29-2001
BCX68
Collector current I C = f (VBE)
Total power dissipation Ptot = f(TS)
VCE = 1V
10 4
1.1
W
EHP00461
mA
ΙC
0.9
10 3
0.8
Ptot
BCX 68
5
100 ˚C
25 ˚C
-50 ˚C
0.7
0.6
10 2
0.5
5
0.4
0.3
10
0.2
5
1
0.1
0
0
10 0
15
30
45
60
75
90 105 120
°C 150
TS
0
0.2
0.4
0.8
0.6
VBE
Permissible pulse load
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp )
VCE = 5V
10 3
BCX 68
EHP00462
Ptot max
5
Ptot DC
tp
D=
T
10 3
fT
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
BCX 68
EHP00463
MHz
tp
T
10 2
1.0 V 1.2
5
10 2
5
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 1
10 0
10 0
5 10 1
5
10 2
mA
10 3
ΙC
tp
3
Jun-29-2001
BCX68
DC current gain hFE = f (IC )
Collector-emitter saturation voltage
VCE = 1V
IC = f (VCEsat), h FE = 10
BCX 68
10 3
EHP00464
10
4 BCX 68
EHP00465
mA
5
h FE
ΙC
100 ˚C
10
25 ˚C
10 2
3
5
-50 ˚C
100 ˚C
25 ˚C
-50 ˚C
5
10
2
5
10 1
10
5
1
5
10 0
10 0
10
5 10 2
5 10 1
5 10 3
0
mA 10 4
0
0.2
0.4
0.6
Collector cutoff current ICBO = f (TA)
Base-emitter saturation voltage
VCB = 25V
IC = f (VBEsat), hFE = 10
Ι CB0
BCX 68
EHP00466
10 4
BCX 68
EHP00467
mA
ΙC
max
10 4
10 3
5
5
10
100 ˚C
25 ˚C
-50 ˚C
3
5
10 2
typ
10 2
5
10
0.8
VCE sat
ΙC
10 5
nA
V
5
10
1
5
5
10 0
1
0
50
100
˚C
10 0
150
TA
0
0.2
0.4
0.6
0.8
1.0 V 1.2
VBE sat
4
Jun-29-2001
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