Central CMWSH-4 Surface mount superminitm dual isolated silicon schottky diode Datasheet

Central
CMWSH-4
TM
Semiconductor Corp.
SURFACE MOUNT
SUPERminiTM
DUAL ISOLATED
SILICON SCHOTTKY DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMWSH-4,
40V, Low VF, consists of two galvanically
isolated SUPERminiTM Silicon Schottky diodes.
The CMWSH-4 has been designed for use in
high speed surface mount switching
applications.
MARKING CODE: WSH4
SOT-343 CASE
MAXIMUM RATINGS: (TA=25°C)
40
UNITS
V
Continuous Forward Current
SYMBOL
VRRM
IF
100
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10 ms
IFSM
750
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
Peak Repetitive Reverse Voltage
Thermal Resistance
ΘJA
-65 to +150
°C
357
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
IR
IR
IR
VF
VF
VF
CT
trr
TEST CONDITIONS
VR=25V
VR=25V, TA=100°C
MIN
TYP
90
MAX
500
UNITS
nA
25
100
µA
VR=40V
IF=2.0mA
0.23
5.0
µA
0.29
0.33
V
IF=15mA
IF=100mA
0.40
0.45
V
0.52
0.60
VR=1.0V, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
10.0
V
pF
5.0
ns
R1 (14-November 2002)
Central
TM
Semiconductor Corp.
CMWSH-4
SURFACE MOUNT
SUPERminiTM
DUAL ISOLATED
SILICON SCHOTTKY DIODES
SOT-343 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE D1
2) ANODE D1
3) ANODE D2
4) CATHODE D2
MARKING CODE: WSH4
R1 (14-November 2002)
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