Diodes BSS138-7-F N-channel enhancement mode field effect transistor Datasheet

SPICE MODEL: BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
Low On-Resistance
A
Low Gate Threshold Voltage
D
Low Input Capacitance
B
Low Input/Output Leakage
C
G TOP VIEW S
Lead Free/RoHS Compliant (Note 3)
D
E
G
Qualified to AEC-Q101 Standards for High Reliability
H
Mechanical Data
·
·
SOT-23
Fast Switching Speed
K
Case: SOT-23
J
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
·
Terminal Connections: See Diagram
M
L
Drain
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Gate
Marking (See Page 2): K38
Ordering & Date Code Information: See Page 2
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0°
8°
All Dimensions in mm
Source
Weight: 0.008 grams (approximate)
Maximum Ratings
Dim
@ TA = 25°C unless otherwise specified
Symbol
BSS138
Units
Drain-Source Voltage
Characteristic
VDSS
50
V
Drain-Gate Voltage RGS £ 20KW
VDGR
50
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current
Continuous
ID
200
mA
Pd
300
mW
RqJA
417
°C/W
Tj, TSTG
-55 to +150
°C
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
50
75
¾
V
VGS = 0V, ID = 250mA
Zero Gate Voltage Drain Current
IDSS
¾
¾
0.5
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
¾
¾
±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
0.5
1.2
1.5
V
VDS = VGS, ID = 250mA
RDS (ON)
¾
1.4
3.5
W
VGS = 10V, ID = 0.22A
gFS
100
¾
¾
mS
Input Capacitance
Ciss
¾
¾
50
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
8.0
pF
Turn-On Delay Time
tD(ON)
¾
¾
20
ns
Turn-Off Delay Time
tD(OFF)
¾
¾
20
ns
OFF CHARACTERISTICS (Note 2)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VDS = 25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
VDS = 10V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Notes:
VDD = 30V, ID = 0.2A,
RGEN = 50W
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
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Ordering Information
Notes:
(Note 4)
Device
Packaging
Shipping
BSS138-7-F
SOT-23
3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K38
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
0.6
VGS = 3.5V
ID, DRAIN-SOURCE CURRENT (A)
Tj = 25°C
0.5
VGS = 3.25V
0.4
VGS = 3.0V
0.3
VGS = 2.75V
0.2
VGS = 2.5V
0.1
0
0
2
1
3
5
4
6
7
8
9
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
ID, DRAIN-SOURCE CURRENT (A)
0.8
VDS = 1V
0.7
-55°C
0.6
25°C
0.5
150°C
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
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2.45
2.25
2.05
VGS = 10V
ID = 0.5A
1.85
1.65
1.45
VGS = 4.5V
ID = 0.075A
1.25
1.05
0.85
0.65
-55
45
-5
95
145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
VGS(th), GATE THRESHOLD VOLTAGE (V)
2
1.8
1.6
ID = 1.0mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125 140
RDS(ON), DRAIN-SOURCE ON RESISTANCE (W)
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
7
150°C
VGS = 2.5V
6
5
25°C
4
3
-55°C
2
1
0
0
0.02
0.04
0.06
0.08 0.1
0.12
0.14
0.16
ID, DRAIN CURRENT (A)
Fig. 5 Drain-Source On Resistance vs. Drain Current
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BSS138
9
8
VGS = 2.75V
7
6
150°C
5
4
25°C
3
2
-55°C
1
0
0.1
0.05
0
0.15
0.25
0.2
ID, DRAIN CURRENT (A)
Fig. 6 Drain-Source On Resistance vs. Drain Current
6
VGS = 4.5V
5
150°C
4
3
2
25°C
1
-55°C
0
0
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.45
0.4
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Drain-Source On Resistance vs. Drain Current
3.5
VGS = 10V
3
150°C
2.5
2
1.5
25°C
1
-55°C
0.5
0
0
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain Current
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ID, DIODE CURRENT (A)
1
0.1
150°C
-55°C
0.01
25°C
0.001
0
0.2
0.4
0.6
0.8
1.2
1
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
100
C, CAPACITANCE (pF)
VGS = 0V
f = 1MHz
CiSS
10
COSS
CrSS
1
0
5
10
15
20
25
30
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain Source Voltage
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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