PHILIPS BF820W Npn high-voltage transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF820W; BF822W
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
FEATURES
PINNING
• Low current (max. 50 mA)
PIN
• High voltage (max. 300 V).
1
base
2
emitter
3
collector
APPLICATIONS
DESCRIPTION
• Telephony and professional communication equipment.
DESCRIPTION
3
handbook, halfpage
NPN high-voltage transistor in a SOT323 plastic package.
3
MARKING
1
TYPE NUMBER
MARKING CODE
BF820W
1Vt
BF822W
1Wt
2
1
2
Top view
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BF820W
−
300
V
BF822W
−
250
V
BF820W
−
300
V
BF822W
−
250
V
−
100
mA
mW
collector-emitter voltage
ICM
peak collector current
open base
Ptot
total power dissipation
Tamb ≤ 25 °C
−
200
hFE
DC current gain
IC = 25 mA; VCE = 20 V
50
−
Cre
feedback capacitance
IC = ic = 0; VCB = 30 V; f = 1 MHz
−
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
60
−
MHz
1997 Sep 03
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BF820W
−
300
V
BF822W
−
250
V
BF820W
−
300
V
BF822W
−
250
V
−
5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
50
mA
ICM
peak collector current
−
100
mA
IBM
peak base current
−
50
mA
open collector
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
625
K/W
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 200 V
−
10
nA
IE = 0; VCB = 200 V; Tj = 150 °C
−
10
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
50
hFE
DC current gain
IC = 25 mA; VCE = 20 V
50
−
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5mA; note 1
−
600
mV
Cre
feedback capacitance
IC = ic = 0; VCB = 30 V; f = 1 MHz
−
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
60
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1997 Sep 03
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1997 Sep 03
REFERENCES
IEC
JEDEC
EIAJ
SC-70
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
NOTES
1997 Sep 03
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
NOTES
1997 Sep 03
7
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
117047/00/03/pp8
Date of release: 1997 Sep 03
Document order number:
9397 750 02796
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