GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Fourth Generation IGBT • • • Unit: mm Enhancement mode type High speed : tf = 0.1 μs (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 V Continuous collector current Diode forward current DC IC 50 1ms ICP 120 DC IF 30 1ms IFP 120 PC 140 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Note: A A JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-16C1C high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 4.6 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Collector TOSHIBA 50J328 Gate Part No. (or abbreviation code) Lot No. Emitter Note 1 Note 1: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 1 2011-03-08 GT50J328 Electrical Characteristics (Ta=25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ― ― ± 100 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ― ― 1.0 mA VGE (OFF) IC = 50 mA, VCE = 5 V 3.0 ― 6.0 V VCE (sat) IC = 50 A, VGE = 15 V ― 2.0 2.8 V VCE = 10 V, VGE = 0, f = 1 MHz ― 4800 ― pF ― 0.2 ― ― 0.3 ― ― 0.1 0.17 ― 0.4 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time 30Ω 15V 0 6Ω -15V tf μs toff Note 2 Diode forward voltage VF IF = 30 A, VGE = 0 ― ⎯ 2.0 V Reverse recovery time trr IF = 30A, VGE = 0, di/dt = − 100 A/μs ⎯ ⎯ 0.2 µs Turn-off time 300V Thermal Resistance (IGBT) Rth (j-c) ⎯ ⎯ ⎯ 0.89 °C/W Thermal Resistance (Diode) Rth (j-c) ⎯ ⎯ ⎯ 2.0 °C/W Note 2: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) 2 tf tr toff ton 2011-03-08 GT50J328 IC – VCE 120 Common emitter エ ミッタ接地 Tc=-40℃ TC = −40°C 10 100 (A) 80 Collector current IC Collector current IC エミッタ接地 Common emitter TC = 25°C Tc=25℃ 20 15 10 9 (A) 100 IC – VCE 120 20 15 9 60 8.5 40 8 20 80 8.5 60 8 40 20 VG E=7V VGE=7 V 0 0 0 1 2 3 Collector-emitter voltage 4 5 0 VCE (V) 1 2 IC – VCE 120 10 120 9 100 80 (A) 8.5 Collector current IC 20 (A) Collector current IC 5 Common emitter エミッタ接地 VCE = 5 V VC E=5V Tc=125℃ TC = 125°C 100 4 VCE (V) IC – VGE 15 エミッ タ接 地 Common emitter 3 Collector-emitter voltage 8 60 V GE=7V 40 20 80 60 25 40 Tc=125℃ -40 20 0 0 0 1 2 3 Collector-emitter voltage 4 5 0 2 4 6 Gate-emitter voltage VCE (V) 8 10 12 VGE (V) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 3 .5 3 エミ ッ タ接 地 Common emitter VG E= 1 5 V VGE = 15 V 12 0 2 .5 80 50 2 30 1 .5 IC =1 0 A 1 0 .5 0 -50 0 50 1 00 150 Case temperature Tc (°C) 3 2011-03-08 GT50J328 VCE, VGE – QG C – VCE 20 200 10 VCE = 300 V 100 5 100 0 0 200 80 160 1000 Coes 100 Common emitter VGE = 0 f = 1MHz TC = 25°C 10 0 320 240 Cies (pF) 15 Capacitance C 300 10000 VGE (V) エミッタ接地 Common emitter RLR=L 6= Ω 6Ω = 25°C TcTC = 25°C Gate-emitter voltage Collector-emitter voltage VCE (V) 400 0.1 Gate charge QG (nC) 1 Common emitter VCC = 300 V IC = 50 A VGG = ± 15 V TC = 25°C VCE (V) toff toff Switching time (μs) Switching time (μs) 1000 Switching Time – IC ton tr tf 0.1 tr ton tf 0.1 Common emitter VCC = 300 V RG = 30 Ω VGG = ± 15 V TC = 25°C 0.01 0.01 1 10 100 Gate resistance RG 0 1000 (Ω) 10 20 IC max (continuous) (A) 1000 1ms* 100μs* 10μs* 10 DC operation 1 50 60 (A) Reverse bias SOA Collector current IC (A) 100 10ms* 40 3000 *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. IC max (pulsed) * 30 Collector current IC Safe Operating Area 1000 Collector current IC 100 1 1 1 10 Collector-emitter voltage Switching Time – RG 10 Cres 10 100 Collector-emitter voltage VCE (V) 500 300 Tj ≤ 125°C VGG = 20 V RG = 10 Ω 100 50 30 10 5 3 1 1 1000 10 100 Collector-emitter voltage 4 1000 10000 VCE (V) 2011-03-08 GT50J328 (°C/W) VGE = 15V 50 40 30 20 10 100 125 150 ＩＧＢＴ部 IGBT −1 10 −2 Curves should be applied in Tc=２５℃（無限大放熱板使用) thermal limited area. Single non-repetitive pulse 本ﾃﾞｰﾀは、熱抵抗制限領域にのみ適 TC = 25°C (infinite heat sink) 用されます。(単発ﾊﾟﾙｽ測定) 10 −3 10 −5 10 −4 10 −3 10 Case temperature Tc (°C) −2 10 Pulse width IF - V F Irr (A) Common collector VGE = 0 40 30 20 25 Tc = 125℃ 10 -40 0 0.4 0.8 1.2 Diode forward voltage VF 1.6 2.0 500 30 300 trr 10 100 5 50 3 30 Irr 0 (V) Common collector di/dt = -100 A/µs VGE = 0 Tc = 25°C 5 10 Peak reverse recovery current 100 50 30 10 5 5 10 30 Reverse voltage 25 10 30 (A) 50 VR 100 200 8 6 trr 100 4 2 0 0 300 500 コレクタ接地 Common collector IF =IF30 AA = 30 = 25°C Tc T =c25°C 10 trr Irr (A) Tc = 25°C 3 20 Irr, trr – di/dt f = 1 MHz 300 3 1 15 Diode forward current IF Cj (pF) 500 2 10 50 Cj – VR 1000 1 10 tw (s) 1 0 Junction capacitance 0 10 Irr, trr – IF Peak reverse recovery current Diode forward current IF (A) 50 −1 10 (ns) 75 0 10 trr 50 ダイオード部 Diode Reverse recovery time 25 1 10 (ns) 0 10 Irr 40 80 120 160 Reverse recovery time 60 rth(j-c) - tw 2 Common emitter Transient thermal impedance rth(j-c) Maximum DC collector current IC max (A) IC max – Tc 70 0 200 di/dt (A/µs) (V) 5 2011-03-08 GT50J328 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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