Renesas BCR16CS-12LB-T11 Triac medium power use (the product guaranteed maximum junction temperature of 150â°c) Datasheet

BCR16CS-12LB
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
REJ03G0471-0300
Rev.3.00
Nov 30, 2007
Features
• Non-Insulated Type
• Planar Passivation Type
• IT (RMS) : 16 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
4
1
2, 4
1.
2.
3.
4.
3
2
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
3
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G0471-0300
Page 1 of 7
Rev.3.00
Nov 30, 2007
Symbol
Voltage class
12
Unit
VDRM
VDSM
600
720
V
V
BCR16CS-12LB (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
16
Unit
A
Surge on-state current
ITSM
170
A
60Hzsinewave 1 full cycle, peak value,
non-repetitive
I2 t
121
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
5
0.5
10
2
– 40 to +150
– 40 to +150
1.2
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency sine full wave
Note3
360° conduction Tc = 125°C
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 25 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30Note6
30Note6
30Note6
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
1.4
V
°C/W
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3 Note4
(dv/dt)c
10/1
—
—
V/µs
Tj = 125°C/150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 2.
3.
4.
5.
6.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured on the T2 tab.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0471-0300
Page 2 of 7
Rev.3.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR16CS-12LB (The product guaranteed maximum junction temperature of 150°C)
Performance Curves
103
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
160
140
120
100
80
60
40
20
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
VGM = 10V
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
VGT = 1.5V
100
7
5
3
2
10–1
7 IFGT I, IRGT I, IRGT III
VGD = 0.1V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
180
0
100
4.0
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
REJ03G0471-0300
Page 3 of 7
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
101
7
5
3
2
Surge On-State Current (A)
200
102
7
5
3
2
3
2
Rated Surge On-State Current
Rev.3.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR16CS-12LB (The product guaranteed maximum junction temperature of 150°C)
Allowable Case Temperature vs.
RMS On-State Current
160
35
140
30 360° Conduction
Resistive,
25 inductive loads
20
15
10
5
0
2
6
8 10 12 14 16 18 20
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 2 4 6 8 10 12 14 16 18 20
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
140
120 × 120 × t2.3
120
100 × 100 × t2.3
100
80
60
120 Curves apply regardless
of conduction angle
100
RMS On-State Current (A)
160
Ambient Temperature (°C)
4
60 × 60 × t2.3
Curves apply
40 regardless of
conduction angle
20 Resistive, inductive loads
Natural convection
0
0 2 4 6 8 10 12 14 16 18 20
160
Ambient Temperature (°C)
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
40
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
5
3 Typical Example
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140160
REJ03G0471-0300
Page 4 of 7
Junction Temperature (°C)
Rev.3.00
Nov 30, 2007
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR16CS-12LB (The product guaranteed maximum junction temperature of 150°C)
Breakover Voltage vs.
Junction Temperature
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3 T +, G+
2
2
Typical Example
T2–, G–
0
10
–40
0
40
80
160
120
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
103
7
5
3
2
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7 Minimum
Characteristics
5 Value
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
3
2
I Quadrant
100
7
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G0471-0300
Page 5 of 7
Rev.3.00
Nov 30, 2007
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Latching Current (mA)
Latching Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
I Quadrant
3
2 Minimum
100
7
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
Characteristics
Value
3
5 7 101
III Quadrant
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
BCR16CS-12LB (The product guaranteed maximum junction temperature of 150°C)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
Test Procedure I
V
A
V
330Ω
Test Procedure III
REJ03G0471-0300
Page 6 of 7
330Ω
Test Procedure II
6Ω
6V
R1
A
6V
330Ω
Rev.3.00
Nov 30, 2007
C0
R0
C1 = 0.1 to 0.47µF C0 = 0.1µF
R0 = 100Ω
R1 = 47 to 100Ω
BCR16CS-12LB (The product guaranteed maximum junction temperature of 150°C)
Package Dimensions
Previous Code
TO-220S
RENESAS Code
PRSS0004AB-A
1.5Max
+0.3
3.0 –0.5
Unit: mm
4.5
1.5Max
10.5Max
MASS[Typ.]
1.2g
1.3
0
+0.3
–0
(1.5)
JEITA Package Code
SC-83
8.6 ± 0.3
9.8 ± 0.5
Package Name
TO-220S
1
5
0.5
2.6 ± 0.4
4.5
0.8
Order Code
Lead form
Surface-mounted type
Surface-mounted type
Standard
packing
Taping
Quantity
Plastic Magazine
(Tube)
1000
50
Type name – T +Direction (1 or 2) +1
Standard order
code example
BCR16CS-12LB-T11
Type name
BCR16CS-12LB
Standard order code
Note : Please confirm the specification about the shipping in detail.
REJ03G0471-0300
Page 7 of 7
Rev.3.00
Nov 30, 2007
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