Vishay BAR65V-02V Rf pin diode Datasheet

BAR65V-02V
VISHAY
Vishay Semiconductors
RF PIN Diode
Mechanical Data
Case: Plastic case (SOD 523)
Weight: 1.5 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box
A
Description
With the very low forward resistance combined with a
low reverse capacitance the BAR65V-02V is ideal for
RF-signal switching. Depending on the forward current (If) the forward resistance (rf) can be reduced to
only a few hundred mΩ. Driven In the reverse mode
the "switch is off" , the isolation capacitance is less
than 1pF. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
Features
• Space saving SOD523 package with low series
inductance
• Very low forward resistance
• Small reverse capacitance
C
16863
Applications
• For frequency up to 3 GHz
• RF-signal switching
• Mobile, wireless and TV-Applications
Parts Table
Part
Ordering code
BAR65V-02V
BAR65V-02V-GS08
Marking
Remarks
E
Package
Tape and Reel
SOD523
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Reverse voltage
Parameter
Test condition
Sub type
VR
30
V
Forward current
IF
100
mA
Tj
150
°C
Tstg
- 55 to +
150
°C
Junction temperature
Storage temperature range
Unit
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction soldering point
Symbol
Value
Unit
RthJS
100
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Min
Reverse voltage
Parameter
IR = 10 µA
VR
30
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
Document Number 85644
Rev. 1, 23-Oct-02
Test condition
Sub type
Typ.
Max
Unit
IR
20
nA
VF
1.1
V
V
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BAR65V-02V
VISHAY
Vishay Semiconductors
Parameter
Test condition
Diode capacitance
Forward resistance
Charge carrier life time
Sub type
Symbol
Min
Typ.
Max
Unit
f = 1 MHz, V R = 0
CD
0.65
f = 1 MHz, V R = 1 V
CD
0.55
0.9
pF
pF
f = 1 MHz, V R = 3 V
CD
0.50
0.8
pF
Ω
f = 100 MHz, IF = 1 mA
rf
1
f = 100 MHz, IF = 5 mA
rf
0.6
0.95
Ω
f = 100 MHz, IF = 10 mA
rf
0.52
0.9
Ω
IF = 10 mA, IR = 6 mA, iR = 3 mA
trr
150
ns
Typical Characteristics (Tamb = 25°C unless otherwise specified)
rf – Forward Resistance ( W )
100.0
f = 100 MHz
10.0
1.0
0.1
0.10
1.00
10.00
100.00
IF – Forward Current ( mA )
16898
Figure 1. Forward Resistance vs. Forward Current
CD – Diode Capacitance ( pF )
0.7
0.6
0.5
0.4
f = 1 MHz
0.3
0.2
0.1
0.0
0
16899
5
10
15
20
25
30
VR – Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
Document Number 85644
Rev. 1, 23-Oct-02
www.vishay.com
2
VISHAY
BAR65V-02V
Vishay Semiconductors
Package Dimensions in mm
ISO Method E
16864
Document Number 85644
Rev. 1, 23-Oct-02
www.vishay.com
3
BAR65V-02V
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85644
Rev. 1, 23-Oct-02
www.vishay.com
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