MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking R5 1. 2. 3. S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 13 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 0.6 V Collector-current IC 100 mA Base-current IB 10 mA Collector power dissipation PC 160 mW Collector power dissipation PC (Note 1) 700 mW Tj 150 °C Tstg −55 to 150 °C Junction temperature Storage temperature range Base Emitter Collector Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-03-30 MT3S111 Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Symbol Max Unit 9 11.5 ⎯ GHz VCE=5 V, IC=30 mA, f=500 MHz ⎯ 17.5 ⎯ dB 2 VCE=5 V, IC=30 mA, f=1 GHz 10 12 ⎯ dB NF(1) VCE=5 V, IC=30 mA, f=500 MHz ⎯ 0.65 ⎯ dB NF(2) VCE=5 V, IC=30 mA, f=1 GHz ⎯ 0.9 1.2 dB ⎯ 32 ⎯ dBmW Min Typ. Max Unit ⎯ ⎯ 0.1 μA 200 ⎯ 400 ⎯ rd 3 order intermodulation distortion output intercept point Typ. VCE=5 V, IC=30 mA |S21e| (2) Noise figure Min 2 fT |S21e| (1) Insertion gain Test Condition OIP3 VCE=5 V, IC=30 mA, f=500 MHz, ⊿f=1 MHz Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB=5 V, IE=0 A DC current gain hFE VCE=5 V, IC=50 mA Output capacitance Cob VCB=5 V, IE=0 A, f=1 MHz ⎯ 1.45 ⎯ pF Reverse transfer capacitance Cre VCB=5 V, IE=0 A, f=1 MHz (Note 2) ⎯ 0.9 1.2 pF Note 2: Cre is measured using a 3-terminal method with capacitance bridge Caution: This device is sensitive to electrostatic discharge due to the high frequency transistor process of fT=60 GHz class which is used for this product. Please make tool and equipment earthed enough when you handle. 2 2009-03-30 MT3S111 hFE-IC IC-VBE 100 Collector-current IC(mA) DC current gain hFE 1000 100 10 COMMON EMITTER VCE=5V Ta=25°C 1 10 COMMON EMITTER VCE=5V Ta=25°C 1 0.1 0.01 0.001 10 100 0 Collector-current IC(mA) 0.2 15 COMMON EMITTER Ta=25°C IB= 200μA 50 160μA 40 120μA 30 80μA 20 40μA 10 0 1 VCE=5V Ta=25°C 10 5 0 0 1 2 3 4 5 6 1 10 Collector-emitter voltage VCE(V) NF-IC 20 2.5 VCE=5V 18 Ta=25°C 16 VCE=5V Ta=25°C f = 1GHz 2.0 f = 500MHz Noise figure NF(dB) 14 12 10 100 Collector-current IC(mA) |S21e|2-IC Insertion gain |S21e|2(dB) 0.8 fT-IC Transition frequency fT(GHz) Collector-current IC(mA) 60 0.6 Base-emitter voltage VBE(V) IC-VCE 70 0.4 f = 1GHz 8 6 4 1.5 1.0 f = 500MHz 0.5 2 0 0.0 1 10 100 1 Collector-current IC(mA) 10 100 Collector-current IC(mA) 3 2009-03-30 MT3S111 OIP3-IC 2.4 40 IE=0 f=1MHz Ta=25°C 2 Cob Third order intermodulation distortion output intercept point OIP3(dBmW) Output capacitance Cob(pF) Reverse transfer capacitance Cre(pF) Cre,Cob-VCB 1.6 1.2 Cre 0.8 0.4 0 0.1 1 10 Collector-base voltage VCB(V) 35 30 25 VCE=5V f1=500MHz f2=501MHz Pin=-15dBmW Ta=25°C 20 15 10 5 0 1 10 100 Collector-current IC(mA) PC-Ta Collector power dissipation PC(mW) 800 The device is mounted on a ceramicboard(25.4mm×25.4mm×0.8mm(t)) 700 600 500 400 300 Device only 200 100 0 0 25 50 75 100 125 150 Ambient temperature Ta(°C) 4 2009-03-30 MT3S111 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2009-03-30