Fairchild FDV305N 20v n-channel powertrench mosfet Datasheet

FDV305N
20V N-Channel PowerTrench MOSFET
General Description
Features
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
• 0.9 A, 20 V
Applications
• Low gate charge
•
Load switch
• Fast switching speed
•
Battery protection
•
Power management
RDS(ON) = 220 mΩ @ VGS = 4.5 V
RDS(ON) = 300 mΩ @ VGS = 2.5 V
• High performance trench technology for extremely
low RDS(ON)
D
D
S
SOT-23
Absolute Maximum Ratings
Symbol
S
G
G
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
0.9
A
– Continuous
– Pulsed
2
PD
Maximum Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
0.35
W
–55 to +150
°C
357
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
305
FDV305N
7’’
8mm
3000 units
2003 Fairchild Semiconductor Corporation
FDV305N Rev D (W)
FDV305N
January 2003
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
ID = 250 µA
20
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V,
VDS = 0 V
–100
nA
1.5
V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
VGS = 0 V,
ID = 250 µA,Referenced to 25°C
15
mV/°C
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA
VDS = VGS,
ID = 250 µA,Referenced to 25°C
0.6
1
–3
164
235
220
mV/°C
220
300
303
ID(on)
On–State Drain Current
ID = 0.9 A
VGS = 4.5 V,
ID = 0.7 A
VGS = 2.5 V,
VGS = 4.5V, ID = 0.9 A, TJ = 125°C
VGS = 4.5V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5V,
ID = 0.9 A
3
S
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
109
pF
30
pF
14
pF
1
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 10 V,
VGS = 4.5 V,
VDS = 10 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
ID = 0.9 A,
4.5
9
ns
7
14
ns
8
16
ns
1.4
2.8
ns
1.1
1.5
nC
0.26
nC
0.26
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IF = 0.9 A,
diF/dt = 100 A/µs
IS = 0.29 A
0.75
0.29
A
1.2
V
7.4
nS
2.2
nC
Notes:
1.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDV305N Rev D (W)
FDV305N
Electrical Characteristics
FDV305N
Typical Characteristics
1.8
VGS = 4.5V
2.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
ID, DRAIN CURRENT (A)
3.0V
1.5
1
2.0V
0.5
1.6
VGS = 2.5V
1.4
3.0V
1.2
3.5V
4.5V
0.8
0
0
0.5
1
1.5
0
2
0.5
Figure 1. On-Region Characteristics.
1.5
2
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.6
ID = 0.9A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
ID = 0.5A
0.5
0.4
o
TA = 125 C
0.3
o
TA = 25 C
0.2
0.1
-50
-25
0
25
50
75
100
125
150
1
2
TJ, JUNCTION TEMPERATURE (oC)
10
IS, REVERSE DRAIN CURRENT (A)
o
25 C
TA = -55oC
2
4
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
2.5
VDS = 5V
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
ID, DRAIN CURRENT (A)
4.0V
1
o
125 C
1.5
1
0.5
VGS = 0V
1
o
TA = 125 C
0.1
o
25 C
o
-55 C
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDV305N Rev D (W)
FDV305N
Typical Characteristics
150
VDS = 5V
ID = 0.9A
10V
120
15V
3
2
90
60
COSS
1
30
0
0
CRSS
0
0.5
1
1.5
0
5
Qg, GATE CHARGE (nC)
15
P(pk), PEAK TRANSIENT POWER (W)
5
RDS(ON) LIMIT
100µs
1ms
1
10ms
100ms
1s
DC
VGS = 4.5V
SINGLE PULSE
o
RθJA = 357 C/W
0.1
o
TA = 25 C
0.01
0.1
1
20
Figure 8. Capacitance Characteristics.
10
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10
100
SINGLE PULSE
RθJA = 357°C/W
TA = 25°C
4
3
2
1
0
0.001
0.01
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
f = 1 MHz
VGS = 0 V
CISS
4
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
o
0.2
0.1
RθJA = 357 C/W
0.1
0.05
0.01
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
FDV305N Rev D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
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