Rohm DTA123YKA -100ma / -50v digital transistors (with built-in resistors) Datasheet

-100mA / -50V Digital transistors
(with built-in resistors)
DTA123YE / DTA123YUA / DTA123YKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
DTA123YE
0.7
1.6
 Features
1)Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2)The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation,
making the device design easy.
0.55
0.3
(2)
0.2
(1) GND
(2) IN
(3) OUT
1.0
ROHM : EMT3
Abbreviated symbol : 52
2.0
0.9
0.7
0.2
0.3
2.1
1.25
(3)
0.1Min.
(1)
(2)
 Packaging specifications
0.65 0.65
Package
EMT3
UMT3
SMT3
Package type
Taping
Taping
Taping
TL
T106
T146
3000
3000
3000
0.15
1.3
ROHM : UMT3
EIAJ : SC-70
Abbreviated symbol : 52
2.9
DTA123YKA
−
DTA123YKA
−
0.8
(3)
−
1.6
2.8
DTA123YUA
Each lead has same dimensions
1.1
0.4
−
−
DTA123YE
−
(2)
(1)
0.95 0.95
0.15
 Absolute maximum ratings (Ta=25C)
Parameter
1.9
Limits
Symbol
Unit
ROHM : SMT3
EIAJ : SC-59
DTA123YE DTA123YUA DTA123YKA
Supply voltage
VCC
−50
V
Input voltage
VIN
−12 to +5
V
IO
−100
IC(Max.)
−100
Output current
(1) GND
(2) IN
(3) OUT
PD
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
150
200
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
 Inner circuit
mA
Power dissipation
Abbreviated symbol : 52
0.3Min.
Basic ordering
unit (pieces)
0.15
0.5 0.5
 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Part No.
0.1Min.
(1)
0.2
DTA123YUA
Code
1.6
0.8
(3)
mW
OUT
R1
IN
R2
GND(+)
OUT
IN
GND(+)
R1=2.2kΩ R2=10kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.B
DTA123YE / DTA123YUA / DTA123YKA
Data Sheet
 Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Symbol
Min.
Typ.
VI(off)
−
−
−0.3
VI(on)
−3
−
−
VO(on)
−
−0.1
−0.3
V
II
−
−
−3.8
mA
VI=−5V
IO(off)
−
−
−0.5
μA
VCC=−50V, VI=0V
Input current
Output current
Max.
Unit
Conditions
VCC=−5V, IO=−100μA
V
VO=−0.3V, IO=−20mA
IO/II=−10mA/−0.5mA
DC current gain
GI
33
−
−
−
Input resistance
R1
1.54
2.2
2.86
kΩ
Resistance ratio
R2/R1
3.6
4.5
5.5
−
−
250
−
MHz
fT ∗
Transition frequency
VO=−5V, IO=−10mA
−
−
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
 Electrical characteristic curves
−10m
−5m
VO=−0.3V
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(on)(V)
−50
−20
−10
Ta=−40°C
25°C
100°C
−5
−2
−1
−500m
−200m
−100m
−100μ
−1m
−10m
−100m
Input voltage vs. output current
(ON characteristics)
−1
Ta=100°C
25°C
−40°C
−200μ
−100μ
−50μ
−20μ
−10μ
−5μ
VO=−5V
500
200
100
50
Ta=100°C
25°C
−40°C
20
10
5
2
0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
Fig.1
−2m
−1m
−500μ
−2μ
−1μ
1k
VCC=−5V
DC CURRENT GAIN : GI
−100
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
−100μ
−1m
−10m
−100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
IO/II=20
OUTPUT VOLTAGE : VO(on) (V)
−500m
−200m
−100m
−50m
Ta=100°C
25°C
−40°C
−20m
−10m
−5m
−2m
−1m
−100μ
−1m
−10m
−100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.B
Notice
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