Mitsubishi BCR12KM-14 Medium power use insulated type, planar passivation type Datasheet

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12KM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12KM-14
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.6 ± 0.2
➀➁➂
➁
................................................................ 12A
● VDRM ................................................................. 700V
● IFGT ! , IRGT ! , IRGT # .................................... 30mA
● Viso .................................................................. 2000V
● IT (RMS)
➀
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
✽ Measurement point of
case temperature
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ ➂ GATE TERMINAL
TO-220FN
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair driver,
control of household equipment such as TV sets • stereo • refrigerator • washing machine •
infrared kotatsu • carpet, solenoid drivers, small motor control, copying machine, electric tool
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
V DRM
Repetitive peak off-state
V DSM
Non-repetitive peak off-state voltage✽1
Symbol
Unit
14
voltage✽1
700
840
Conditions
Ratings
Unit
I T (RMS)
RMS on-state current
Commercial frequency, sine full wave 360° conduction, Tc=81°C
I TSM
Surge on-state current
60Hz sinewave 1 full cycle, peak value, non-repetitive
12
120
A
A
I 2t
I 2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
60
A2s
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
I GM
Peak gate voltage
Peak gate current
Tj
T stg
Junction temperature
Storage temperature
—
Viso
Parameter
V
V
Weight
Isolation voltage
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
5
W
0.5
10
W
V
2
–40 ~ +125
A
°C
–40 ~ +125
2.0
°C
g
2000
V
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12KM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
—
Typ.
—
Max.
2.0
Unit
I DRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
V TM
V FGT !
On-state voltage
Tc=25°C, I TM=20A, Instantaneous measurement
—
—
—
—
1.6
1.5
V RGT !
V RGT #
Gate trigger voltage
Tj=25°C, V D=6V, RL=6Ω, RG=330Ω
—
—
—
—
1.5
1.5
V
V
—
—
30
—
—
—
—
30
30
mA
mA
0.2
—
—
—
—
3.0
°C/ W
✽2
—
—
V/µs
!
@
#
I FGT !
I RGT !
Gate trigger current
I RGT #
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
Rth (j-c)
Thermal resistance
Junction to case ✽3
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
!
@
Tj=25°C, V D=6V, RL=6Ω, RG=330Ω
#
mA
V
V
mA
V
✽2. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽3. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W.
Voltage
class
VDRM
(V)
14
(dv/dt)c
Symbol
Min.
R
—
700
V/µs
L
Test conditions
Unit
10
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C
SUPPLY
VOLTAGE
2. Rate of decay of on-state
commutating current
(di/dt)c=–6.0A/ms
MAIN
CURRENT
3. Peak off-state voltage
VD=400V
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
RATED SURGE ON-STATE
CURRENT
102
7
5
3
2
101
7
5
3
2
200
Tj = 125°C
Tj = 25°C
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE
CHARACTERISTICS
180
160
140
120
100
80
60
40
20
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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