Fairchild FDD8444L-F085 N-channel powertrenchâ® mosfet Datasheet

FDD8444L_F085
tm
®
N-Channel PowerTrench MOSFET
40V, 50A, 6.0mΩ
Features
Applications
„ Typ rDS(on) = 3.8mΩ at VGS = 5V, ID = 50A
„ Automotive Engine Control
„ Typ Qg(tot) = 46nC at VGS = 5V
„ Powertrain Management
„ Low Miller Charge
„ Solenoid and Motor Drivers
„ Low Qrr Body Diode
„ Electronic Transmission
„ UIS Capability (Single Pulse/ Repetitive Pulse)
„ Distributed Power Architecture and VRMs
„ Qualified to AEC Q101
„ Primary Switch for 12V and 24V systems
A
REE I
DF
M ENTATIO
LE
N
MP
LE
„ RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDD8444L_F085 Rev A (W)
1
www.fairchildsemi.com
FDD8444L_F085 N-Channel PowerTrench® MOSFET
January 2009
Symbol
VDSS
Drain to Source Voltage
VGS
Parameter
PD
±20
V
(Note 1)
50
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
16
Pulsed
EAS
Units
V
Gate to Source Voltage
Drain Current Continuous (TC < 150°C, VGS = 10V)
ID
Ratings
40
A
See Figure 4
Single Pulse Avalanche Energy
(Note 2)
295
mJ
Power Dissipation
153
W
Derate above 25oC
1.02
W/oC
-55 to +175
oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
2
Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area
0.98
o
C/W
52
o
C/W
Package Marking and Ordering Information
Device Marking
FDD8444L
Device
FDD8444L_F085
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
40
-
-
-
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
VGS = VDS, ID = 250µA
1
1.8
3
V
ID = 50A, VGS= 10V
-
3.5
5.2
ID = 50A, VGS= 5V
-
3.8
6.0
ID = 50A, VGS= 4.5V
-
4.0
6.5
ID = 50A, VGS= 5V,
TJ = 175oC
-
6.8
10.7
VDS = 25V, VGS = 0V,
f = 1MHz
-
5530
-
pF
-
605
-
pF
pF
VDS = 32V,
VGS = 0V
TJ = 150oC
µA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
400
-
RG
Gate Resistance
f = 1MHz
-
1.7
-
Ω
Qg(TOT)
Total Gate Charge at 5V
VGS = 0 to 5V
-
46
60
nC
VGS = 0 to 2V
Qg(TH)
Threshold Gate Charge
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller“ Charge
FDD8444L_F085 Rev A (W)
2
VDD = 20V
ID = 50A
Ig = 1.0mA
-
5.4
7
nC
-
16.3
-
nC
-
10.9
-
nC
-
21
-
nC
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FDD8444L_F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
Turn-On Time
-
-
104
ns
td(on)
Turn-On Delay Time
-
18.7
-
ns
tr
Turn-On Rise Time
-
46
-
ns
td(off)
Turn-Off Delay Time
-
42
-
ns
tf
Turn-Off Fall Time
-
19.2
-
ns
toff
Turn-Off Time
-
-
96
ns
ISD = 50A
-
0.9
1.25
ISD = 25A
-
0.8
1.0
VDD = 20V, ID = 50A
VGS = 5V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 50A, dIF/dt = 100A/µs
V
-
34
44
ns
-
29
38
nC
Notes:
1: Package current limitation is 50A.
2: Starting TJ = 25oC, L = 0.37mH, IAS = 40A.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the
requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
FDD8444L_F085 Rev A (W)
3
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FDD8444L_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25oC unless otherwise noted
140
1.0
120
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
VGS = 10V
CURRENT LIMITED
BY PACKAGE
100
80
VGS = 5V
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
0
25
175
Figure 1. Normalized Power Dissipation vs Case
Temperature
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
-5
10
-4
-3
10
-2
10
10
t, RECTANGULAR PULSE DURATION(s)
-1
0
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
4000
IDM, PEAK CURRENT (A)
VGS = 10V
1000
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
100
10
-5
10
SINGLE PULSE
-4
10
-3
-2
10
10
t, RECTANGULAR PULSE DURATION(s)
-1
10
0
10
Figure 4. Peak Current Capability
FDD8444L_F085 Rev A (W)
4
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FDD8444L_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
500
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
1000
10us
100
100us
10
LIMITED
BY PACKAGE
1
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
1ms
SINGLE PULSE
10ms
TJ = MAX RATED
o
TC = 25 C
o
STARTING TJ = 150 C
1
0.01
200
ID, DRAIN CURRENT (A)
TJ = 175 C
TJ = 25oC
TJ = -55oC
20
0
0.5
1.0
1.5
2.0
2.5
3.0
10
100
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150
VGS = 3.5V
VGS = 4V
100
50
VGS = 3V
0
3.5
VGS = 10V
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
30
ID = 50A
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
15
10
TJ = 175oC
5
0
TJ = 25oC
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDD8444L_F085 Rev A (W)
1000
Figure 6. Unclamped Inductive Switching
Capability
o
40
1
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
VDD = 5V
60
0.1
tAV, TIME IN AVALANCHE (ms)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
o
STARTING TJ = 25 C
100
Figure 5. Forward Bias Safe Operating Area
100
100
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
5
1.8
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 50A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
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FDD8444L_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.10
VGS = VDS
ID = 250µA
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.4
1.0
0.8
0.6
0.4
0.2
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
CAPACITANCE (pF)
Ciss
Coss
1000
Crss
f = 1MHz
VGS = 0V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
FDD8444L_F085 Rev A (W)
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
100
0.1
ID = 250uA
10
ID = 50A
VDD = 15V
8
VDD = 20V
6
VDD = 25V
4
2
0
0
20
40
60
Qg, GATE CHARGE(nC)
80
100
Figure 14. Gate Charge vs Gate to Source Voltage
6
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FDD8444L_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I37
FDD8444L_F085 Rev A (W)
7
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FDD8444L_F085 N-Channel PowerTrench® MOSFET
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