TOSHIBA 2SC2873Y

2SC2873
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications
Power Switching Applications
Unit: mm
•
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
•
High-speed switching time: tstg = 1.0 μs (typ.)
•
Small flat package
•
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
•
Complementary to 2SA1213
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
0.4
A
PC
500
Collector power dissipation
PC
(Note 1)
Junction temperature
Storage temperature range
1000
JEDEC
mW
Tj
150
°C
Tstg
−55 to 150
°C
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2SC2873
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
―
―
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
―
0.1
μA
V (BR) CEO
IC = 10 mA, IB = 0
50
―
―
V
VCE = 2 V, IC = 0.5 A
70
―
240
hFE (2)
VCE = 2 V, IC = 2.0 A
20
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.05 A
―
―
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 0.05 A
―
―
1.2
V
fT
VCE = 2 V, IC = 0.5 A
―
120
―
MHz
VCB = 10 V, IE = 0, f = 1 MHz
―
30
―
pF
―
0.1
―
―
1.0
―
―
0.1
―
hFE (1)
DC current gain
(Note 3)
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Switching time
Cob
ton
tstg
20 μs INPUT IB1
IB1
IB2
OUTPUT
―
30 Ω
Collector-emitter breakdown voltage
μs
IB2
Fall time
tf
IB1 = −IB2 = 0.05 A,
DUTY CYCLE ≤ 1%
Note 3: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Part No. (or abbreviation code)
M
Lot No.
Characteristics indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SC2873
VCE – IC
VCE – IC
1.6
VCE (V)
VCE (V)
1.6
Common emitter
Ta = 100°C
0.8
IB = 3 mA
5
10
Collector-emitter voltage
Collector-emitter voltage
1.2
20
30
0.4
40
50
0
0
0.4
0.8
1.2
Collector current IC
1.6
(A)
Common emitter
Ta = 25°C
1.2
0.8
IB = 5 mA
30
40
0.4
2.0
1.2
2.0
(A)
hFE – IC
Common emitter
Common emitter
1.2
0.8 IB = 5 mA
10
20
30
0.4
VCE = 2 V
500
Ta = −55°C
300
Ta = 100°C
25
100
−55
50
30
40
10
10
50
0.4
0.8
1.2
Collector current IC
1.6
30
100
300
Collector current IC
2.0
1000
3000
(mA)
(A)
VCE (sat) – IC
VBE (sat) – IC
1
10
Common emitter
Common emitter
Base-emitter saturation voltage
VBE (sat) (V)
IC/IB = 20
0.5
0.3
0.1
Ta = 100°C
0.05
0.03
25
−55
0.01
10
1.6
1000
DC current gain hFE
VCE (V)
Collector-emitter voltage
0.8
Collector current IC
VCE – IC
Collector-emitter saturation voltage
VCE (sat) (V)
20
0.4
0
0
1.6
0
0
10
30
100
300
Collector current IC
1000
3
(mA)
Ta = −55°C
1
0.5
25
100
0.3
0.1
10
3000
IC/IB = 20
5
30
100
300
Collector current IC
3
1000
3000
(mA)
2006-11-10
2SC2873
IC – VBE
Safe Operating Area
2.0
5000
IC max (pulse)*
IC max (continuous)
3000
Common emitter
(mA)
1.5
Ta = 100°C
25 −55
Collector current IC
Collector current IC
(A)
VCE = 2 V
1.0
0.5
1 ms*
10 ms*
100 ms*
1000
1 S*
500
300
DC operation
Ta = 25°C
100
50
30
*: Single no repetitive pulse
Ta = 25°C
Curves must be derated linearly
0
0
0.4
0.8
1.2
Base-emitter voltage
1.6
10
2.0
with increase in temperature
Tested without a substrate
5
0.1
VBE (V)
0.3
1
3
Collector-emitter voltage
VCEO max
10
30
100
VCE (V)
PC – Ta
1.0
(1) Mounted on a ceramic
(1)
substrate (250 mm2 × 0.8 t)
Collector power dissipation
PC
(W)
1.2
(2) No heat sink
0.8
0.6
(2)
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
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2SC2873
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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