Microsemi APTGF50TL60T3G Three level inverter npt igbt power module Datasheet

APTGF50TL60T3G
VCES = 600V
IC = 50A @ Tc = 80°C
Three level inverter
NPT IGBT Power Module
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25
23 22
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
20 19 18
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
600
65
50
230
±20
250
Tj = 125°C
100A @ 500V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
March, 2009
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-8
APTGF50TL60T3G – Rev 0
Symbol
VCES
APTGF50TL60T3G
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Tj = 25°C
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
Min
Typ
VGE = 0V
VCE = 600V
1.7
2.0
2.2
4
Max
250
500
2.45
Unit
µA
V
6
400
V
nA
Max
Unit
Q1 to Q4 Dynamic Characteristics
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
VGE = 15V
VBus = 300V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 50A
Tj = 125°C
RG = 2.7Ω
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
Junction to Case Thermal Resistance
Min
Typ
2200
323
200
166
20
100
40
9
pF
nC
ns
120
12
42
10
ns
130
21
0.5
mJ
1
225
A
0.5
°C/W
March, 2009
RthJC
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
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2-8
APTGF50TL60T3G – Rev 0
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
APTGF50TL60T3G
CR1 to CR6 diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=600V
DC Forward Current
IF = 30A
IF = 60A
IF = 30A
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
di/dt =200A/µs
Err
Reverse Recovery Energy
IF = 30A
VR = 400V
IF = 30A
VR = 400V
Min
600
Tj = 25°C
Tj = 150°C
Tc = 80°C
Typ
Max
25
500
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
30
1.8
2.2
1.5
25
160
35
Tj = 125°C
480
Tj = 125°C
0.6
Unit
V
µA
A
2.2
V
ns
nC
mJ
di/dt =1000A/µs
RthJC
Junction to Case Thermal Resistance
1.2
°C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
Min
2500
-40
-40
-40
2.5
Typ
Max
Unit
V
T25 = 298.15 K
TC=100°C
RT =
R25
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
Thermal and package characteristics
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
150
125
100
4.7
110
°C
N.m
g
March, 2009
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
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3-8
APTGF50TL60T3G – Rev 0
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
APTGF50TL60T3G
SP3 Package outline (dimensions in mm)
28
17
1
12
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4-8
APTGF50TL60T3G – Rev 0
March, 2009
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
APTGF50TL60T3G
Q1 to Q4 Typical performance curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
100
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
75
TJ=25°C
50
TJ=125°C
25
75
TJ=25°C
50
TJ=125°C
25
0
0
0
1
2
3
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
75
50
TJ=125°C
25
TJ=25°C
0
0
1
2
3
4 5
6 7
8
9
VGE, Gate to Emitter Voltage (V)
VCE=120V
IC = 50A
TJ = 25°C
16
14
VCE=300V
12
VCE=480V
10
8
6
4
2
0
0
10
25
50
75
100 125 150 175 200
Gate Charge (nC)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
70
1.20
Ic, DC Collector Current (A)
1.10
1.00
0.90
0.80
25
50
75
100
60
50
40
30
20
10
125
TJ, Junction Temperature (°C)
0
25
50
75
100
125
150
TC, Case Temperature (°C)
March, 2009
Collector to Emitter Breakdown
Voltage (Normalized)
Gate Charge
18
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
100
4
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5-8
APTGF50TL60T3G – Rev 0
Ic, Collector Current (A)
100
APTGF50TL60T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VGE = 15V
50
40
Tj = 125°C
VCE = 400V
RG = 2.7Ω
30
20
0
25
50
75
100
125
175
150
VGE=15V,
TJ=125°C
125
100
75
50
150
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.7Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VGE=15V,
TJ=125°C
125
150
TJ = 125°C
30
20
TJ = 25°C
10
0
0
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
0
150
Turn-On Energy Loss vs Collector Current
TJ=125°C,
VGE=15V
VCE = 400V
RG = 2.7Ω
1.5
1
0.5
0
0
25
50
75
100
2.5
Eoff, Turn-off Energy Loss (mJ)
2
Eon, Turn-On Energy Loss (mJ)
100
40
10
125
VCE = 400V
VGE = 15V
RG = 2.7Ω
2
TJ = 125°C
1
0.5
0
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
3
120
Eon, 50A
2
1.5
Eoff, 50A
1
0.5
100
80
March, 2009
IC, Collector Current (A)
VCE = 400V
VGE = 15V
TJ= 125°C
150
1.5
Switching Energy Losses vs Gate Resistance
2.5
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
ICE, Collector to Emitter Current (A)
Switching Energy Losses (mJ)
75
VCE = 400V, VGE = 15V, RG = 2.7Ω
50
40
20
50
Current Fall Time vs Collector Current
60
30
25
ICE, Collector to Emitter Current (A)
60
50
VGE=15V,
TJ=25°C
VCE = 400V
RG = 2.7Ω
60
40
20
Eon, 50A
0
0
0
5
10
15
20
Gate Resistance (Ohms)
25
0
200
400
600
VCE, Collector to Emitter Voltage (V)
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6-8
APTGF50TL60T3G – Rev 0
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
60
APTGF50TL60T3G
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
240
VCE = 400V
D = 50%
RG = 2.7Ω
TJ = 125°C
TC= 75°C
200
hard
switching
160
120
50
80
40
0
0
VCE, Collector to Emitter Voltage (V)
20
40
60
80
100
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
March, 2009
0.5
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7-8
APTGF50TL60T3G – Rev 0
Thermal Impedance (°C/W)
0.6
APTGF50TL60T3G
CR1 to CR6 Typical performance curve
Forward Characteristic of diode
80
IF (A)
60
TJ=125°C
40
TJ=25°C
20
0
0.0
0.4
0.8
1.2
VF (V)
1.6
2.0
2.4
Switching Energy Losses vs Gate Resistance
1
0.75
0.75
0.5
E (mJ)
E (mJ)
Energy losses vs Collector Current
1
VCE = 400V
VGE = 15V
RG = 2.5Ω
TJ = 125°C
0.25
20
40
60
VCE = 400V
VGE =15V
IC = 30A
TJ = 125°C
0.25
0
0
0.5
0
80
0
2
4
6
8
Gate Resistance (ohms)
IC (A)
10
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
1
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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8-8
APTGF50TL60T3G – Rev 0
March, 2009
Rectangular Pulse Duration (Seconds)
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