GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 μs (typ.) (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) • FRD included between emitter and collector • Fourth generation IGBT • TO-3P(LH) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C Continuous collector current @ Tc = 25°C Pulsed collector current Diode forward current Collector power dissipation IC 33 60 ICP 120 DC IF 30 Pulsed IFP 120 @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range PC 68 170 A A A W JEDEC ― JEITA ― TOSHIBA Tj 150 °C Tstg −55 to 150 °C 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.74 °C/W Thermal resistance (diode) Rth (j-c) 1.56 °C/W Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT60J323 Gate Lot No. JAPAN Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT60J323 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ― ― 1.0 mA VGE (OFF) IC = 60 mA, VCE = 5 V 3.0 ― 6.0 V VCE (sat) IC = 60 A, VGE = 15 V ― 1.9 2.5 V VCE = 10 V, VGE = 0, f = 1 MHz ― 4800 ― pF Resistive Load ― 0.17 ― VCC = 300 V, IC = 60 A ― 0.23 ― VGG = ±15 V, RG = 30 Ω ― 0.16 0.26 ― 0.41 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time (Note 1) toff μs Diode forward voltage VF IF = 30 A, VGE = 0 ― 1.4 2.0 V Reverse recovery time trr IF = 30 A, di/dt = −100 A/μs ― 0.1 0.2 µs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff 2 tr ton 2006-11-01 GT60J323 IC – VCE IC – VCE 120 Common emitter Tc = −40°C 100 (A) (A) Collector current IC 8 80 7 60 40 VGE = 6 V 20 0 0 1 2 3 4 Collector-emitter voltage 15 100 10 20 Common emitter Tc = 25°C 15 Collector current IC 120 Common emitter 7 60 40 VGE = 6 V 20 0 0 5 VCE (V) 1 2 7 60 40 VGE = 6 V 20 2 VCE (V) Common emitter VCE = 5 V 80 60 40 25 −40 20 1 5 (A) 15 Collector current IC (A) Collector current IC 100 8 80 0 0 4 IC – VGE 120 20 100 3 Collector-emitter voltage 10 Tc = 125°C 8 80 IC – VCE 120 10 20 3 Collector-emitter voltage 4 0 0 5 Tc = 125°C 2 4 Gate-emitter voltage VCE (V) 6 8 10 VGE (V) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 3.2 IC = 120 A 2.4 80 60 1.6 30 10 0.8 Common emitter VGE = 15 V 0.0 −60 −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT60J323 VCE, VGE – QG C – VCE 20 200 10 VCE = 300 V 100 5 100 0 0 200 80 160 (pF) 15 10000 Capacitance C 300 30000 VGE (V) Common emitter RL = 5 Ω Tc = 25°C Gate-emitter voltage Collector-emitter voltage VCE (V) 400 1000 500 300 Coes 100 50 30 10 0.0 0 320 240 Cies 5000 3000 1 10 Switching Time – RG 10 Common emitter 3 V CC = 300 V IC = 60 A VGG = ±15 V 1 Tc = 25°C 5 toff 3 ton Switching time (μs) Switching time (μs) 1000 VCE (V) Switching Time – IC 5 tr 0.5 tf 0.3 0.1 0.05 Common emitter VCC = 300 V RG = 30 Ω VGG = ±15 V Tc = 25°C 1 0.5 toff 0.3 tf 0.1 t on 0.05 0.03 tr 0.03 0.01 0 10 100 Gate resistance RG 0.01 0 1000 (Ω) 10 20 30 40 Collector current IC Safe Operating Area 50 60 70 (A) Reverse Bias SOA 3000 3000 *: Single non-repetitive pulse Tc = 25°C 1000 1000 (A) Curves must be derated linearly with increases in temperature. 500 300 IC max (pulsed) * Collector current IC (A) 100 Collector-emitter voltage Gate charge QG (nC) Collector current IC Cres Common emitter VGE = 0 f = 1 MHz Tc = 25°C 100 50 30 IC max 10 μs* 10 ms* 1 ms* (continuous) 100 μs* 10 5 DC operation 3 1 1 10 100 Collector-emitter voltage 1000 500 300 100 50 30 10 5 3 1 1 10000 VCE (V) Tj ≤ 125°C VGG = 20 V RG = 10 Ω 10 100 Collector-emitter voltage 4 1000 10000 VCE (V) 2006-11-01 GT60J323 Common emitter VGE = 15 V 60 50 40 30 20 10 50 75 100 Tc Case temperature 125 Tc = 25°C 10 2 101 Diode stage 100 IGBT stage 10−1 10−2 10−3 10−5 150 10−4 (°C) 10−3 10−2 Pulse width VGE = 0 Peak reverse recovery current Forward current IF (A) 80 60 40 25 Tc = 125°C −40 0.4 0.8 1.2 Forward voltage VF 1.6 30 300 10 100 trr 5 50 3 30 Irr 5 (V) Common emitter di/dt = −100 A/μs VGE = 0 Tc = 25°C 10 15 Forward current IF 20 10 30 25 (A) Irr, trr – di/dt trr 100 50 30 10 100 5 3 5 10 30 Reverse voltage 50 100 VR (V) 0 300 500 Common emitter 10 IF = 30 A Tc = 25°C Irr (ns) 200 Peak reverse recovery current Tc = 25°C (A) f = 1 MHz 300 3 1 (s) 500 1 0 2.0 Reverse recovery time Junction capacitance Cj (pF) 500 102 50 Cj – V R 1000 101 trr Irr (A) Common emitter 0 0 tw 100 Irr, trr – IF IF – V F 100 20 10−1 (ns) 0 25 rth (t) – tw 103 Reverse recovery time Maximum DC collector current ICmax (A) Transient thermal impedance rth (t) (°C/W) ICmax – Tc 70 8 6 trr 4 2 0 0 Irr 40 80 120 160 200 di/dt (A/μs) 5 2006-11-01 GT60J323 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01