TOSHIBA 2SC4793FM

2SC4793
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications
Driver Stage Amplifier Applications
•
High transition frequency: fT = 100 MHz (typ.)
•
Complementary to 2SA1837
Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
0.1
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
2.0
20
W
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2SC4793
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 230 V, IE = 0
―
―
1.0
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
―
1.0
μA
V (BR) CEO
IC = 10 mA, IB = 0
230
―
―
V
Collector-emitter breakdown voltage
DC current gain
hFE
VCE = 5 V, IC = 100 mA
100
―
320
VCE (sat)
IC = 500 mA, IB = 50 mA
―
―
1.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
―
―
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 100 mA
―
100
―
MHz
VCB = 10 V, IE = 0, f = 1 MHz
―
20
―
pF
Collector-emitter saturation voltage
Collector output capacitance
Cob
Marking
C4793
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SC4793
IC – VCE
IC – VBE
1.0
1.0
10
8
0.8
(A)
6
Collector current IC
Collector current IC
(A)
20
0.6
4
0.4
IB = 2 mA
0.2
0.8
Tc = 100°C
0.6
25
−25
0.4
0.2
Common emitter
Tc = 25°C
0
0
2
4
6
8
Collector-emitter voltage
Common emitter
VCE = 5 V
0
0
10
0.2
VCE (V)
0.4
0.6
Base-emitter voltage
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
DC current gain hFE
Common emitter
VCE = 5 V
300
Tc = 100°C
100
−25
50
25
30
10
0.003
0.01
0.03
0.1
0.3
Collector current IC
1.0
1.2
1.4
VBE (V)
VCE (sat) – IC
1000
500
0.8
1
3
1
Common emitter
IC/IB = 10
0.5
Tc = 100°C
0.3
25
−25
0.1
0.05
0.03
0.01
0.003
0.01
(A)
0.03
0.1
0.3
Collector current IC
1
3
(A)
Safe Operating Area
5
3
(A)
fT – IC
300
Collector current IC
Transition frequency fT (MHz)
500
Common emitter
VCE = 10 V
Tc = 25°C
100
50
1
0.05
0.01
1
Collector current IC
300
1000
(mA)
DC operation
Tc = 25°C
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VCEO max
3
10
30
Collector-emitter voltage
3
10 ms*
100 ms*
0.1
10
5
100
IC max (continuous)
0.3
0.03
30
1 ms*
0.5
30
10
IC max (pulsed)*
100
300
VCE (V)
2006-11-10
2SC4793
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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