SSM6N37FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37FE ○ High-Speed Switching Applications ○ Analog Switching Applications 単位: mm 1.6±0.05 • Low ON-resistance 1.6±0.05 RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Drain–source voltage 5 3 4 Unit VDSS 20 V 1.Source1 4.Source2 V 2.Gate1 5.Gate2 3.Drain2 6.Drain1 DC ID 250 Pulse IDP 500 PD (Note 1) 150 mW Channel temperature Tch 150 Storage temperature Tstg −55 to 150 Drain power dissipation 2 Rating ± 10 Drain current 6 Symbol VGSS Gate–source voltage 1 0.2±0.05 Suitable for high-density mounting due to compact package 0.12±0.05 • 0.55±0.05 1.5-V drive 1.0±0.05 0.5 0.5 1.2±0.05 • mA ES6 JEDEC ― °C JEITA ― °C TOSHIBA 2-2N1D Weight: 3.0 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Marking 6 Equivalent Circuit (top view) 5 4 6 SU 1 2 5 4 Q1 Q2 3 1 2 1 3 2009-11-12 SSM6N37FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = -10 V 12 ⎯ ⎯ Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA 0.35 ⎯ 1.0 V 0.14 0.28 ⎯ S ID = 100 mA, VGS = 4.5 V (Note 2) ⎯ 1.65 2.20 ID = 50 mA, VGS = 2.5 V (Note 2) ⎯ 2.16 3.02 ID = 20 mA, VGS = 1.8 V (Note 2) ⎯ 2.66 4.05 ID = 10 mA, VGS = 1.5 V (Note 2) ⎯ 3.07 5.60 ⎯ 12 ⎯ ⎯ 5.5 ⎯ ⎯ 4.1 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth VDS = 3 V, ID = 1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 100 mA Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching time (Note 2) VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-on time ton VDD = 10 V, ID = 100 mA ⎯ 18 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 36 ⎯ ID = -250 mA, VGS = 0 V ⎯ -0.9 -1.2 Drain-source forward voltage VDSF (Note 2) V Ω pF ns V Note 2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) (a) Test Circuit 2.5 V OUT 10 μs RG IN 0 (b) VIN VDD = 10 V RG = 50 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V 0V (c) VOUT VDD 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Precaution Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the SSM6N37FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Do not use this device under avalanche mode. It may cause the device to break down. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (j-a) and drain power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. 2 2009-11-12 SSM6N37FE (Q1, Q2 Common) ID – VDS ID – VGS 500 1000 (mA) 400 4.5 V 2.5 V 100 1.8 V 1.5 V 200 VGS = 1.2 V 100 0 ID Ta = 100 °C 300 Drain current Drain current ID (mA) 10 V Common Source Ta = 25 °C 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 10 1 − 25 °C 25 °C 0.1 Common Source VDS = 3 V 0.01 0 1.0 1.0 (V) Gate-source voltage RDS (ON) – VGS (V) Common Source Common Source 5 4 25 °C 3 Ta = 100 °C 2 − 25 °C 1 0 4 2 6 Gate-source voltage 8 VGS Ta = 25°C 5 Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) VGS 6 ID =100mA 4 1.5 V 1.8 V 3 2.5V 2 VGS = 4.5Ｖ 1 0 10 0 (V) 100 200 RDS (ON) – Ta ID 3 100m A / 4.5 V 1 0 50 Ambient temperature (mA) VDS = 3 V Vth (V) Gate threshold voltage 50m A / 2.5 V 2 500 Common Source ID = 10m A / VGS = 1.5 V 20m A / 1.8 V 4 400 Vth – Ta 1.0 Common Source 0 −50 300 Drain current 5 Drain-source ON-resistance RDS (ON) (Ω) 3.0 RDS (ON) – ID 6 0 2.0 100 Ta ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2009-11-12 SSM6N37FE (Q1, Q2 Common) (mS) IDR – VDS |Yfs| – ID 1000 1000 (mA) Common Source ⎪Yfs⎪ VDS = 3 V Ta = 25°C IDR Drain reverse current Forward transfer admittance 300 100 30 10 100 10 1 Drain current ID 100 25 °C 10 D 1 S –0.5 –1.0 Drain-source voltage (mA) C – VDS VDS Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 50Ω toff (ns) Ciss Switching time Capacitance C t (pF) 50 30 10 Coss 5 3 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 Crss 1 10 Drain-source voltage VDS tf 100 ton 10 tr 1 100 (V) –1.5 (V) t – ID 1000 100 IDR G −25 °C 0.1 0 1000 Common Source VGS = 0 V Ta =100 °C 1 10 Drain current 100 ID 1000 (mA) PD* – Ta Mounted on FR4 board. 2 (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm × 6) 200 Drain power dissipation P D* (mW) 250 150 100 150 0 -40 *:Total Rating -20 0 20 40 60 80 Ambient temperature 100 120 Ta 140 160 (°C) 4 2009-11-12 SSM6N37FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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