TOSHIBA TK25E06K3

TK25E06K3
MOSFETs
Silicon N-channel MOS (U-MOS)
TK25E06K3
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.)
(2)
High forward transfer admittance: |Yfs| = 50 S (typ.)
(3)
Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(4)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
TO-220
 unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics
Drain-source voltage
Drain-gate voltage
(RGS = 20 kΩ)
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Unit
V
VDSS
60
VDGR
60
VGSS
±20
ID
25
(Note 1)
IDP
75
PD
60
W
EAS
54
mJ
IAR
25
A
(Note 2)
Avalanche current
Repetitive avalanche energy
Rating
(Note 1)
(Tc = 25)
Single-pulse avalanche energy
Symbol
EAR
6
mJ
Channel temperature
Tch
150

Storage temperature
Tstg
-55 to 150
Note:
(Note 3)
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
2.08
/W
Channel-to-ambient thermal resistance
Rth(ch-a)
83.3
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 25 V, Tch = 25 (initial), L = 0.11 mH, RG = 25 Ω, IAR = 25 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
 unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
Test Condition
IGSS
VGS = ±20 V, VDS = 0 V
Drain cut-off current
Min
Typ.
Max
Unit


±1
µA
IDSS
VDS = 60 V, VGS = 0 V


10
Drain-source breakdown voltage
V(BR)DSS
ID = 10 mA, VGS = 0 V
60


Drain-source breakdown voltage
V(BR)DSX
ID = 10 mA, VGS = -20 V
35


Gate threshold voltage
V
Vth
VDS = 10 V, ID = 1 mA
2.0

4.0
Drain-source on-resistance
RDS(ON)
VGS = 10 V, ID = 13 A

14
18
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 13 A
25
50

S
Min
Typ.
Max
Unit

1255

pF
 unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss

175

Output capacitance
Coss

235

Switching time (rise time)
tr

9

Switching time (turn-on time)
ton

21

tf

8

toff

29

Min
Typ.
Max
Unit

29

nC
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
ns
Fig. 6.2.1 Switching Time Test Circuit
 unless otherwise specified)
25
6.3. Gate Charge Characteristics (Ta = 25
Characteristics
Symbol
Total gate charge (gate-source plus
gate-drain)
Qg
Test Condition
VDD ≈ 48 V, VGS = 10 V, ID = 25 A
Gate-source charge
Qgs

16

Gate-drain charge
Qgd

13

6.4. Source-Drain Characteristics (Ta = 25
 unless otherwise specified)
25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
A
Reverse drain current (DC)
(Note 4)
IDR



25
Reverse drain current (pulsed)
(Note 4)
IDRP



75
Diode forward voltage
VDSF
IDR = 25 A, VGS = 0 V


-1.5
V
Reverse recovery time
trr

35

ns
Reverse recovery charge
Qrr
IDR = 25 A, VGS = 0 V
-dIDR/dt = 50 A/µs

17

nC
Note 4: Ensure that the channel temperature does not exceed 150.
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 |Yfs| - ID
Fig. 8.6 RDS(ON) - ID
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Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 Capacitance - VDS
Fig. 8.10 Vth - Ta
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
Fig. 8.12 Dynamic Input/Output Characteristics
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Fig. 8.13 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.15 EAS - Tch
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 1.93 g (typ.)
Package Name(s)
TOSHIBA: 2-10X1A
Nickname: TO-220
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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
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