isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44C11 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C11 APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 30 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc website：www.iscsemi.cn MAX UNIT 4.2 ℃/W 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44C11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= 1A; IB= 50mA 0.5 V Base-Emitter Saturation Voltage IC= 1A; IB= 100mA 1.3 V ICES Collector Cutoff Current VCE= 90V, VBE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.2A; VCE= 1V 100 hFE-2 DC Current Gain IC= 2A; VCE= 1V 20 Current-Gain—Bandwidth Product IC= 20mA;VCE= 4V;ftest= 1MHz fT CONDITIONS MIN TYP 220 50 MHz Switching Times tr Rise Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= 1A; IB1= -IB2= 0.1A; VCC= 20V 2 0.3 μs 0.7 μs 0.4 μs