Kexin APM9435K P-channel mosfet Datasheet

MOSFET
SMD Type
P-Channel MOSFET
APM9435K (APM9435KC)
SOP-8
■ Features
● VDS (V) =-30V
● ID =-4.6 A (VGS =-10V)
1.50 0.15
● RDS(ON) < 52mΩ (VGS =-10V)
0.21 -0.02
+0.04
● RDS(ON) < 80mΩ (VGS =-4.5V)
1
2
3
4
4
G
S
1
S S
D DDD
5
6
7
8
2
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
3
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±25
ID
-4.6
IDM
-20
Continuous Drain Current @ VGS=-10V
Pulsed Drain Current @ VGS=-10V
Power Dissipation
(Note.1)
(Note.1)
Ta=25°C
Ta=100°C
Thermal Resistance.Junction- to-Ambient
PD
RthJA
2
Unit
V
A
W
0.8
62.5
Junction Temperature
TJ
150
Junction Storage Temperature Range
Tstg
-55 to 150
℃/W
℃
Note.1: Surface Mounted on 1in 2 pad area, t ≤ 10sec.
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MOSFET
SMD Type
P-Channel MOSFET
APM9435K (APM9435KC)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
VDS=0V, VGS=±25V
Gate Threshold Voltage
VGS(th)
VDS=VGS ID=-250μA
Static Drain-Source On-Resistance
RDS(On)
Input Capacitance
Coss
Reverse Transfer Capacitance
Crss
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn-On DelayTime
td(on)
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Turn-Off Fall Time
tf
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
VSD
Note.1: Pulse test ; pulse width≤300μs, duty cycle≤2%.
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ID=-250μA, VGS=0V
Min
Typ
Max
-30
Unit
V
VDS=-24V, VGS=0V
-1
VDS=-24V, VGS=0V, TJ=55℃
-30
-1
μA
±100
nA
-2
V
VGS=-10V, ID=-4.6A (Note.1)
52
60
VGS=-4.5V, ID=-2A (Note.1)
80
95
mΩ
845
Ciss
Output Capacitance
Gate resistance
2
Test Conditions
VGS=0V, VDS=-25V, f=1MHz
pF
120
80
VGS=0V, VDS=0V, f=1MHz
11.7
22.5
VGS=-10V, VDS=-15V, ID=-4.6A
Ω
29
nC
4.5
2
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
IS=-2A,VGS=0V (Note.1)
8
17
8
18
35
60
11
28
ns
-2
A
-1.3
V
MOSFET
SMD Type
P-Channel MOSFET
APM9435K (APM9435KC)
■ Typical Characterisitics
Power Dissipation
Drain Current
2.5
6
5
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
0.5
4
3
2
1
o
TA=25 C,VG=-10V
o
TA=25 C
0
20
40
60
80 100 120 140 160
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
it
im
300 s
s(
on
)L
10
Rd
-ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
1ms
10ms
1
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0
0.1
1
10
100
-VDS - Drain - Source Voltage (V)
Normalized Transient Thermal Resistance
0.0
2
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
Mounted on 1in pad
o
R JA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
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MOSFET
SMD Type
P-Channel MOSFET
APM9435K (APM9435KC)
■ Typical Characterisitics
Output Characteristics
Drain-Source On Resistance
20
140
VGS= -5, -6, -7, -8, -9, -10V
-ID - Drain Current (A)
16
130
RDS(ON) - On - Resistance (m )
18
-4V
14
12
10
8
-3V
6
4
2
0
0
1
2
3
4
5
6
7
90
80
70
VGS= -10V
60
50
40
0
2
4
6
8
10 12 14 16 18 20
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.6
Normalized Threshold Voltage
14
12
10
8
o
Tj=125 C
6
o
Tj=25 C
4
o
Tj=-55 C
2
0
1
2
3
4
-VGS - Gate - Source Voltage (V)
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IDS = -250uA
1.4
.
16
-ID - Drain Current (A)
VGS= -4.5V
100
20
8
18
4
110
30
20
0
120
5
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
MOSFET
SMD Type
P-Channel MOSFET
APM9435K (APM9435KC)
■ Typical Characterisitics
Drain-Source On Resistance
Source-Drain Diode Forward
20
2.00
VGS = -10V
10
IDS = -4.6A
1.50
o
-IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
Tj=150 C
o
Tj=25 C
1
0.25
o
0.00
-50 -25
RON@Tj=25 C: 52m
0
25
50
75
0.9
1.2
1.5
1.8
Capacitance
Gate Charge
10
VD= -15V
-VGS - Gate-source Voltage (V)
1000
Ciss
C - Capacitance (pF)
0.6
-VSD - Source - Drain Voltage (V)
Frequency=1MHz
800
600
400
200
Coss
Crss
0
0.3
Tj - Junction Temperature (°C)
1200
0
0.1
0.0
100 125 150
5
10
15
20
25
30
-VDS - Drain - Source Voltage (V)
ID= -4.6A
8
6
4
2
0
0
4
8
12
16
20
24
QG - Gate Charge (nC)
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