FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 BVCEO * Collector-Emitter Breakdown Voltage IC=1mA, IB=0 40 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 ICEX Collector Cut-off Current VCE=30V, VEB=3V hFE * DC Current Gain VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA VCE(sat) * Collector-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA VBE(sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA Min. 60 Max. V V 50 40 70 100 60 30 0.65 Units V nA 300 0.2 0.3 V V 0.85 0.95 V V Cob Output Capacitance VCB=5V, IE=0, f=1MHz fT Current Gain Bandwidth Product VCE=20V, IC=10mA 4 NF Noise Figure IC=100µA, VCE=5V, RS=1KΩ f=10Hz to 15.7KHz 5 dB tON Turn On Time VCC=3V, VBE=0.5V IC=10mA, IB1=1mA 70 ns tOFF Turn Off Time VCC=3V, IC=10mA IB1=IB2=1mA 250 ns 300 pF MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking S1A ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJX3904 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 240 VCE = 1V hFE, DC CURRENT GAIN 200 160 120 80 40 0 0.1 1 10 10 IC = 10 IB VBE(sat) 1 0.1 VCE(sat) 0.01 100 0.1 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain 10 100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 6 4 3 2 1 0 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Output Capacitance ©2002 Fairchild Semiconductor Corporation fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz 5 Cob [pF], CAPACITANCE 1 IC[mA], COLLECTOR CURRENT VCE = 20V 100 10 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A2, August 2002 FJX3904 Package Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1