MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER Pout=47.0dBm at Pin=41.0dBm HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency Linear Gain Channel Temperature Rise SYMBOL Pout IDS1 ηadd GL ΔTch CONDITIONS VDS= 24V IDSset≅1.5A f = 8.5 to 9.6GHz @Pin = 41dBm @Pin = 20dBm (VDS X IDS1 + Pin – Pout)X Rth(c-c) UNIT dBm A % MIN. 46.0 － － TYP. 47.0 5.0 31 MAX. － 6.0 － dB °C 7.0 － 9.0 130 － 150 UNIT MIN. TYP. MAX. S ⎯ 4.5 ⎯ V -1 -4 -6 A ⎯ 15 ⎯ V -10 ⎯ ⎯ °C/W ⎯ ⎯ 1.6 Recommended gate resistance(Rg) : Rg= 13.3 Ω(TYP.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance SYMBOL gm CONDITIONS 5V Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO VDS= IDS= VDS= IDS= VDS= VGS= IGS= Rth(c-c) Channel to Case Pinch-off Voltage VGSoff 5.0A 5V 23mA 5V 0V -10mA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. July, 2009 TGI8596-50 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 50 Gate-Source Voltage VGS V -10 Drain Current IDS A 15 Total Power Dissipation (Tc= 25 °C) PT W 140 Channel Temperature Tch °C 250 Storage Tstg °C -65 to +175 PACKAGE OUTLINE ( 7- AA04A ) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2