SSC EGP10B Glass passivated junction fast efficient rectifier Datasheet

EGP10D
Glass Passivated Junction
Fast Efficient Rectifiers
PRODUCT SUMMARY
Reverse Voltage 50 to 400 Volts
Forward Current 1.0 Ampere
FEATURES
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder Dip 260 °C, 40 seconds
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body Epoxy meets
UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per J-STD-002B
and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high reliability
grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Weight: 0.012 ounce, 0.34 gram
Pb-free; RoHS-compliant
07/11/2007 Rev.1.00
www.SiliconStandard.com
1
EGP10D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 oC ambient temperature unless otherwise specified.
Symbol
EGP
10A
EGP
10B
EGP
10C
EGP
10D
EGP
10F
EGP
10G
Unit
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
Volts
Parameter
Maximum RMS voltage
VRMS
35
70
105
140
210
280
Volts
Maximum DC blocking voltage
V DC
50
100
150
200
300
400
Volts
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55oC
IF(AV)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
Maximum instantaneous forward voltage at 1.0A
VF
Maximum DC reverse current
at rated DC blocking voltage
@TA=25oC
@TA=125oC
1.0
30.0
0.95
IR
Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
Typical junction capacitance at 4.0 V, 1 MHz
CJ
Operating junction and storage temperature range
Notes:
Amps
1.25
5.0
100
Typical thermal resistance (Note 1)
Amp
22.0
Volts
uA
nS
15.0
RθJA
50.0
TJ, TSTG
-55 to +150
pF
o
C/W
o
C
1. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length
2. Pulse test: 300us pulse width, 1% duty cycle
07/11/2007 Rev.1.00
www.SiliconStandard.com
2
EGP10D
RATINGS AND CHARACTERISTIC CURVES
o
(TA=25 C unless otherwise noted)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
07/11/2007 Rev.1.00
www.SiliconStandard.com
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