ISC BUF405AXI Isc silicon npn power transistor buf405axi Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUF405AXI
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Designed for high reliability industrial and professional
power driving applications such as motor drivers and
off-line switching power supplies.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
VBE= -1.5V
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7.5
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
3
A
IBM
Base Current-peak
4.5
A
PC
Collector Power Dissipation
@TC=25℃
39
W
Tj
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.2
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUF405AXI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
0.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
0.9
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.1
V
ICER
Collector Cutoff Current
VCE= VCEV; RBE= 5Ω
VCE= VCEV; RBE= 5Ω;TC=100℃
0.1
0.5
mA
ICEV
Collector Cutoff Current
VCE= VCEV; VBE= -1.5V
VCE= VCEV; VBE= -1.5V;TC=100℃
0.1
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
B
B
MIN
TYP.
MAX
UNIT
450
V
7
V
Switching Times
ts
Storage Time
tf
Fall Time
isc Website:www.iscsemi.cn
IC= 2.5A;IB1= 0.25A;VCC= 50V;
VBB= -5V, RBB= 2.4Ω;L= 1mH
Vclamp= 400V
0.8
μs
0.05
μs
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