PHILIPS CGY887 870 mhz, 21.5 db gain push-pull amplifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
CGY887
870 MHz, 21.5 dB gain
push-pull amplifier
Product specification
Supersedes data of 2002 June 07
2002 Jun 27
Philips Semiconductors
Product specification
870 MHz, 21.5 dB gain push-pull amplifier
FEATURES
CGY887
PINNING - SOT115J
• Superior linearity
PIN
DESCRIPTION
• Extremely low noise
1
input
• Rugged construction
2
common
• Gold metallization ensures excellent reliability
3
common
• Excellent gain behaviour over temperature.
5
+VB
7
common
APPLICATIONS
8
common
• CATV systems operating in the 40 to 870 MHz
frequency range.
9
output
handbook, halfpage
DESCRIPTION
1
Hybrid dynamic range amplifier module in a SOT115J
package operating with a voltage supply of 24 V (DC),
employing both GaAs and Si dies.
2
3
5
7
Side view
8
9
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
PARAMETER
CONDITIONS
power gain
Itot
total current consumption (DC)
MIN.
MAX.
UNIT
f = 50 MHz
21.2
21.8
dB
f = 870 MHz
22
23
dB
VB = 24 V
−
240
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
−
75
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C
2002 Jun 27
2
Philips Semiconductors
Product specification
870 MHz, 21.5 dB gain push-pull amplifier
CGY887
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
Gp
power gain
SL
slope straight line
FL
flatness straight line
s11
s22
input return losses
output return losses
CONDITIONS
MIN.
MAX.
UNIT
f = 45 MHz
21.2
21.8
dB
f = 870 MHz
22
23
dB
f = 45 to 870 MHz; note 1
0.6
1.4
dB
f = 45 to 100 MHz
−
±0.3
dB
f = 100 to 800 MHz
−
±0.5
dB
f = 800 to 870 MHz
−
±0.3
dB
f = 45 to 80 MHz
20
−
dB
f = 80 to 160 MHz
20
−
dB
f = 160 to 320 MHz
20
−
dB
f = 320 to 550 MHz
20
−
dB
f = 550 to 650 MHz
19
−
dB
f = 650 to 750 MHz
17
−
dB
f = 750 to 870 MHz
17
−
dB
f = 45 to 80 MHz
21
−
dB
f = 80 to 160 MHz
19
−
dB
f = 160 to 320 MHz
17
−
dB
f = 320 to 550 MHz
16
−
dB
f = 550 to 650 MHz
16
−
dB
f = 650 to 750 MHz
16
−
dB
f = 750 to 870 MHz
16
−
dB
s21
phase response
f = 50 MHz
−45
+45
deg
CTB
composite triple beat
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
−
−57
dB
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
−
−55
dB
Xmod
CSO
cross modulation
composite second order
distortion
132 chs flat; Vo = 42 dBmV; fm = 859.25 MHz
−
−55
dB
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−53
dB
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−50
dB
132 chs flat; Vo = 42 dBmV; fm = 55.25 MHz
−
−52
dB
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
−
−60
dB
CSOsum 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz −
−55
dB
−
−65
dB
CSOsum 132 chs flat; Vo = 42 dBmV; fm = 860.5 MHz −
−55
dB
CSOdif 132 chs flat; Vo = 42 dBmV; fm = 150 MHz
−
−65
dB
note 2
−
−58
dB
note 3
−
−57
dB
note 4
−
−57
dB
dim = −60 dB; note 5
64
−
dBmV
dim = −60 dB; note 6
63
−
dBmV
dim = −60 dB; note 7
62
−
dBmV
CSOdif 112 chs flat; Vo = 44 dBmV; fm = 150 MHz
d2
Vo
2002 Jun 27
second order distortion
output voltage
3
Philips Semiconductors
Product specification
870 MHz, 21.5 dB gain push-pull amplifier
SYMBOL
PARAMETER
CONDITIONS
CGY887
MIN.
−
MAX.
NF
noise figure
f = 50 MHz
f = 100 MHz to f = 870 MHz
−
5
dB
Itot
total current
consumption (DC)
note 8
−
240
mA
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. fp = 55.25 MHz; Vp = 60 dBmV;
fq = 493.25 MHz; Vq = 60 dBmV;
measured at fp + fq = 548.5 MHz.
3. fp = 55.25 MHz; Vp = 60 dBmV;
fq = 691.25 MHz; Vq = 60 dBmV;
measured at fp + fq = 746.5 MHz.
4. fp = 55.25 MHz; Vp = 60 dBmV;
fq = 805.25 MHz; Vq = 60 dBmV;
measured at fp + fq = 860.5 MHz.
5. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo;
fq = 547.25 MHz; Vq = Vo − 6 dB;
fr = 549.25 MHz; Vr = Vo − 6 dB;
measured at fp + fq − fr = 538.25 MHz.
6. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo;
fq = 747.25 MHz; Vq = Vo − 6 dB;
fr = 749.25 MHz; Vr = Vo − 6 dB;
measured at fp + fq − fr = 738.25 MHz.
7. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo − 6 dB;
fr = 860.25 MHz; Vr = Vo − 6 dB;
measured at fp + fq − fr = 849.25 MHz.
8. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2002 Jun 27
4
5.5
UNIT
dB
Philips Semiconductors
Product specification
870 MHz, 21.5 dB gain push-pull amplifier
CGY887
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
y M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
L
min.
p
Q
max.
8.8
4.15
3.85
2.4
REFERENCES
IEC
JEDEC
EIAJ
q1
q2
38.1 25.4 10.2
S
U1
U2
max.
4.2 44.75
8
EUROPEAN
PROJECTION
W
w
6-32 0.25
UNC
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
SOT115J
2002 Jun 27
q
5
Philips Semiconductors
Product specification
870 MHz, 21.5 dB gain push-pull amplifier
CGY887
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2002 Jun 27
6
Philips Semiconductors
Product specification
870 MHz, 21.5 dB gain push-pull amplifier
NOTES
2002 Jun 27
7
CGY887
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/02/pp8
Date of release: 2002
Jun 27
Document order number:
9397 750 09935
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