PHILIPS BYV74 Dual rectifier diodes ultrafast Datasheet

Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated, high efficiency
rectifier diodes in a plastic envelope
featuring low forward voltage drop,
ultra fast reverse recovery times and
soft recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general, where both low
conduction losses and low switching
losses are essential.
PINNING - SOT93
PIN
BYV74 series
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BYV74Repetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
Reverse recovery time
VRRM
VF
IO(AV)
trr
PIN CONFIGURATION
MAX.
MAX.
MAX.
UNIT
300
300
400
400
500
500
V
1.12
30
1.12
30
1.12
30
V
A
60
60
60
ns
SYMBOL
DESCRIPTION
tab
1
Anode 1 (a)
2
Cathode (k)
3
Anode 2 (a)
tab
Cathode (k)
a2
3
a1
1
k2
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 136˚C
IO(AV)
Average output current (both
diodes conducting)1
IO(RMS)
IFRM
IFSM
I2t
Tstg
Tj
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I2t for fusing
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
-
MAX.
-300
300
300
300
-400
400
400
400
UNIT
-500
500
500
500
V
V
V
square wave; δ = 0.5;
Tmb ≤ 94 ˚C
sinusoidal; a = 1.57;
Tmb ≤ 98 ˚C
-
30
A
-
27
A
-
43
A
t = 25 µs; δ = 0.5;
Tmb ≤ 94 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
t = 10 ms
-
30
A
-
150
160
A
A
-40
-
112
150
150
A2s
˚C
˚C
1 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
per diode
both diodes conducting
in free air.
Rth j-a
MIN.
TYP.
MAX.
UNIT
-
45
2.4
1.4
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.95
1.08
1.15
10
0.3
1.12
1.25
1.36
50
0.8
V
V
V
µA
mA
MIN.
TYP.
MAX.
UNIT
-
40
60
nC
-
50
60
ns
-
4.2
5.2
A
-
2.5
-
V
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
IF = 15 A; Tj = 150˚C
IF = 15 A
IF = 30 A
VR = VRRM
VR = VRRM; Tj = 100 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
Qs
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Peak reverse recovery current
(per diode)
Forward recovery voltage (per
diode)
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
IF = 10 A; dIF/dt = 10 A/µs
trr
Irrm
Vfr
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
I
dI
F
BYV74 series
20
F
t
15
I
R
114
4
100%
10%
s
rrm
10
126
5
138
0
0
5
150
15
10
IF(AV) / A
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.1. Definition of trr, Qs and Irrm
I
2.2
2.8
rr
time
I
Tmb(max) / C
102
a = 1.57
1.9
Vo = 0.89
Rs = 0.0137
dt
Q
BYV44
PF / W
trr / ns
1000
F
IF=20 A
100
1A
time
V
F
10
V
V
Tj = 25 C
Tj = 100 C
fr
F
1
1
Fig.2. Definition of Vfr
30
Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode
Tmb(max) / C
88
BYV44
PF / W
Vo = 0.8900 V
Rs = 0.0137 Ohms
10
Irrm / A
D = 1.0
90
25
IF= 20 A
0.5
20
1
102
0.2
15
IF=1A
114
0.1
10
I
tp
D=
tp
T
0.1
126
Tj = 25 C
Tj = 100 C
138
5
T
0
100
10
dIF/dt (A/us)
time
0
5
10
15
IF(AV) / A
20
t
0.01
150
25
1
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square wave where IF(AV) =IF(RMS) x √D.
August 1996
10
-dIF/dt (A/us)
100
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per
diode
3
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
50
BYV74 series
Zth (K/W)
BYV74
IF / A
10
Tj = 25 C
Tj = 150 C
40
1
30
typ
max
20
0.1
D
tp
10
t
0
0
0.5
1
VF / V
1.5
0.01
10 us
2
tp / s
0.1
10 s
Fig.9. Transient thermal impedance per diode
Zth j-mb= f(tp)
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
1000
1 ms
Qs / nC
IF = 20 A
100
2A
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.8. Maximum Qs at Tj = 25˚C; per diode
August 1996
4
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74 series
MECHANICAL DATA
Dimensions in mm
15.2
max
14
Net Mass: 5 g
4.6
max
13.6
2 max
4.25
4.15
2
4.4
21
max
12.7
max
2.2 max
0.5
min
dimensions within
this zone are
uncontrolled
1
2
5.5
13.6
min
3
1.15
0.95
0.5 M
0.4
1.6
11
Fig.10. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
5
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
6
Rev 1.200
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