JDV3S27CT TOSHIBA Diode Silicon Epitaxial Planar Type JDV3S27CT VCO for UHF Band Radio Unit: mm 0.6±0.05 Low series resistance: rs = 0.48 Ω (typ.) • This device is suitable for use in small tuners. • Lead (Pb)-free. 0.05±0.03 • ３ 0.65 1.0±0.05 High capacitance ratio: C1V/C4V = 2.9 (typ.) 0.25±0.03 0.5±0.03 • ２ 0.25±0.03 １ Maximum Ratings (Ta = 25°C) 0.05±0.03 0.35 0.15±0.03 Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 150 °C Tstg −55 ~ 150 °C Storage temperature range 0.38 +0.02 -0.03 Characteristic 1.Anode 2.NC 3.Cathode CST3 JEDEC ― JEITA ― TOSHIBA 1-1S1A Weight: 0.00075 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Reverse voltage Symbol VR Reverse current IR = 1 µA Typ. Max Unit 10 ⎯ ⎯ V nA ⎯ ⎯ 1 VR = 1 V, f = 1 MHz 8.06 ⎯ 8.56 C4V VR = 4 V, f = 1 MHz 2.79 ⎯ 2.98 Capacitance ratio C1V/C4V Series resistance rs VR = 5 V Min C1V IR Capacitance Test Condition ⎯ VR = 1 V, f = 470 MHz pF 2.79 ⎯ 2.98 ⎯ ⎯ 0.48 0.63 Ω Note: Signal level when capacitance is measured. Vsig = 100 mVrms Marking 2 3 62 1 1 2005-11-07 JDV3S27CT CV – VR rs – VR 1.0 (Ω) 100 SERIES RESISTANCE CAPACITANCE CV rs (pF) f=1MHz Ta=25℃ 10 f=470MHz Ta=25℃ 0.8 0.6 0.4 0.2 0.0 1 0 1 2 3 REVERSE VOLTAGE 4 5 VR 6 7 0.1 (V) 1 REVERSE VOLTAGE 2 10 VR (V) 2005-11-07 JDV3S27CT 3 2005-11-07