INCHANGE Semiconductor isc Silicon PNP Power Transistor BD830 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD829 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.0 A ICP Collector Current-Peak -1.5 A PC TJ Tstg Collector Power Dissipation @ Ta=25℃ 2 Collector Power Dissipation @ TC=25℃ 10 Junction Temperature 150 ℃ -65~150 ℃ Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 12.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD830 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 500mA; IB= -50mA -0.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -2V -1.0 V VCB= -30V; IE= 0 -0.1 ICBO CONDITIONS MIN MAX -100 uA VCB=-30V; IE= 0; TC= 125℃ -10 -10 Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -5mA ; VCE= -2V 25 hFE-2 DC Current Gain IC= -150mA ; VCE= -2V 40 hFE-3 DC Current Gain IC= -500mA ; VCE=- 2V 25 Current-Gain—Bandwidth Product IC= -50mA ; VCE=- 5V isc website：www.iscsemi.com UNIT V Collector Cutoff Current IEBO fT TYP. 2 uA 250 75 MHz isc & iscsemi is registered trademark