PHILIPS BZT52H-C27 Single zener diodes in a sod123f package Datasheet

BZT52H series
Single Zener diodes in a SOD123F package
Rev. 01 — 22 December 2005
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface Mounted Device
(SMD) plastic package.
1.2 Features
■ Total power dissipation: ≤ 830 mW
■ Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
■ Small plastic package suitable for
surface mounted design
■ Low differential resistance
1.3 Applications
■ General regulation functions
1.4 Quick reference data
Table 1:
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 10 mA
[1]
-
-
0.9
V
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
-
375
mW
[3]
-
-
830
mW
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
2. Pinning information
Table 2:
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Symbol
[1]
1
1
2
2
sym001
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3:
Ordering information
Type number
BZT52H-C2V4 to
BZT52H-C75 [1]
[1]
Package
Name
Description
Version
-
plastic surface mounted package; 2 leads
SOD123F
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4:
Marking codes
Type number
Marking
code
Type number
Marking
code
Type number
Marking
code
BZT52H-C2V4
B3
BZT52H-C8V2
BG
BZT52H-C30
BV
BZT52H-C2V7
B4
BZT52H-C9V1
BH
BZT52H-C33
BW
BZT52H-C3V0
B5
BZT52H-C10
BJ
BZT52H-C36
BX
BZT52H-C3V3
B6
BZT52H-C11
BK
BZT52H-C39
BY
BZT52H-C3V6
B7
BZT52H-C12
BL
BZT52H-C43
BZ
BZT52H-C3V9
B8
BZT52H-C13
BM
BZT52H-C47
C1
BZT52H-C4V3
B9
BZT52H-C15
BN
BZT52H-C51
C2
BZT52H-C4V7
BA
BZT52H-C16
BP
BZT52H-C56
C3
BZT52H-C5V1
BB
BZT52H-C18
BQ
BZT52H-C62
C4
BZT52H-C5V6
BC
BZT52H-C20
BR
BZT52H-C68
C5
BZT52H-C6V2
BD
BZT52H-C22
BS
BZT52H-C75
C6
BZT52H-C6V8
BE
BZT52H-C24
BT
-
-
BZT52H-C7V5
BF
BZT52H-C27
BU
-
-
9397 750 15082
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 December 2005
2 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
IF
Conditions
Min
Max
Unit
forward current
-
250
mA
IZSM
non-repetitive peak
reverse current
-
see Table 8, 9
and 10
PZSM
non-repetitive peak
reverse power dissipation
[1]
-
40
W
Ptot
total power dissipation
[2]
-
375
mW
[3]
-
830
mW
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Rth(j-a)
Rth(j-sp)
Conditions
thermal resistance from
junction to ambient
in free air
thermal resistance from
junction to solder point
Typ
Max
Unit
-
-
330
K/W
[2]
-
-
150
K/W
[3]
-
-
70
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Soldering point of cathode tab.
9397 750 15082
Product data sheet
Min
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 December 2005
3 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Conditions
forward voltage
VF
[1]
Parameter
[1]
IF = 10 mA
Min
Typ
Max
Unit
-
-
0.9
V
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Table 8:
Characteristics per type; BZT52H-C2V4 to BZT52H-C24
Tj = 25 °C unless otherwise specified.
BZT52H
-Cxxx
Working
voltage
VZ (V);
IZ = 5 mA
Maximum differential
resistance
rdif (Ω)
Reverse
current
IR (µA)
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Diode
capacitance
Cd (pF) [1]
Non-repetitive peak
reverse current
IZSM (A) [2]
Min
Max
IZ = 1 mA
IZ = 5 mA
Max
VR (V)
Min
Max
Max
Max
2V4
2.2
2.6
400
85
50
1
−3.5
0.0
450
6.0
2V7
2.5
2.9
500
3V0
2.8
3.2
500
83
20
1
−3.5
0.0
450
6.0
95
10
1
−3.5
0.0
450
6.0
3V3
3.1
3.5
500
95
5
1
−3.5
0.0
450
6.0
3V6
3.4
3.8
500
95
5
1
−3.5
0.0
450
6.0
3V9
4V3
3.7
4.1
500
95
3
1
−3.5
0.0
450
6.0
4.0
4.6
500
95
3
1
−3.5
0.0
450
6.0
4V7
4.4
5.0
500
78
3
2
−3.5
0.2
300
6.0
5V1
4.8
5.4
480
60
2
2
−2.7
1.2
300
6.0
5V6
5.2
6.0
400
40
1
2
−2.0
2.5
300
6.0
6V2
5.8
6.6
150
10
3
4
0.4
3.7
200
6.0
6V8
6.4
7.2
80
8
2
4
1.2
4.5
200
6.0
7V5
7.0
7.9
80
10
1
5
2.5
5.3
150
4.0
8V2
7.7
8.7
80
10
0.7
5
3.2
6.2
150
4.0
9V1
8.5
9.6
100
10
0.5
6
3.8
7.0
150
3.0
10
9.4
10.6
70
10
0.2
7
4.5
8.0
90
3.0
11
10.4
11.6
70
10
0.1
8
5.4
9.0
85
2.5
12
11.4
12.7
90
10
0.1
8
6.0
10.0
85
2.5
13
12.4
14.1
110
10
0.1
8
7.0
11.0
80
2.5
15
13.8
15.6
110
15
0.05
10.5
9.2
13.0
75
2.0
16
15.3
17.1
170
20
0.05
11.2
10.4
14.0
75
1.5
18
16.8
19.1
170
20
0.05
12.6
12.4
16.0
70
1.5
20
18.8
21.2
220
20
0.05
14
14.4
18.0
60
1.5
22
20.8
23.3
220
25
0.05
15.4
16.4
20.0
60
1.25
24
22.8
25.6
220
30
0.05
16.8
18.4
22.0
55
1.25
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; Tamb = 25 °C
9397 750 15082
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 December 2005
4 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
Table 9:
Characteristics per type; BZT52H-C27 to BZT52H-C51
Tj = 25 °C unless otherwise specified.
BZT52H
-Cxxx
Working
voltage
VZ (V);
IZ = 2 mA
Maximum differential
resistance
rdif (Ω)
Reverse
current
IR (µA)
Min
Max
IZ = 1 mA
IZ = 5 mA
Max
VR (V)
27
25.1
28.9
250
40
0.05
18.9
21.4
25.3
50
1.0
30
28.0
32.0
250
40
0.05
21
24.4
29.4
50
1.0
33
31.0
35.0
250
40
0.05
23.1
27.4
33.4
45
0.9
36
34.0
38.0
250
60
0.05
25.2
30.4
37.4
45
0.8
39
37.0
41.0
300
75
0.05
27.3
33.4
41.2
45
0.7
43
40.0
46.0
325
80
0.05
30.1
37.6
46.6
40
0.6
47
44.0
50.0
325
90
0.05
32.9
42.0
51.8
40
0.5
51
48.0
54.0
350
100
0.05
35.7
46.6
57.2
40
0.4
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; Tamb = 25 °C
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Diode
Non-repetitive peak
capacitance reverse current
Cd (pF) [1]
IZSM (A) [2]
Min
Max
Max
Max
Table 10: Characteristics per type; BZT52H-C56 to BZT52H-C75
Tj = 25 °C unless otherwise specified.
BZT52H
-Cxxx
Working
voltage
VZ (V);
IZ = 2 mA
Maximum differential
resistance
rdif (Ω)
Min
Max
IZ = 0.5 mA IZ = 2 mA Max
56
52.0
60.0
375
120
62
58.0
66.0
400
68
64.0
72.0
400
75
70.0
79.0
400
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; Tamb = 25 °C
Reverse
current
IR (µA)
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Diode
Non-repetitive peak
capacitance reverse current
Cd (pF) [1]
IZSM (A) [2]
VR (V)
Min
Max
Max
Max
0.05
39.2
52.2
63.8
40
0.3
140
0.05
43.4
58.8
71.6
35
0.3
160
0.05
47.6
65.6
79.8
35
0.25
175
0.05
52.5
73.4
88.6
35
0.20
9397 750 15082
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 December 2005
5 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
mbg801
103
PZSM
(W)
mbg781
300
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
10
tp (ms)
0
0.6
0.8
1
VF (V)
(1) Tj = 25 °C (prior to surge)
Tj = 25 °C
(2) Tj = 150 °C (prior to surge)
Fig 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
mbg783
0
Fig 2. Forward current as a function of forward
voltage; typical values
mbg782
10
12
SZ
(mV/K)
SZ
(mV/K)
4V3
11
10
−1
9V1
5
3V9
8V2
7V5
6V8
3V6
−2
6V2
5V6
5V1
0
3V3
4V7
3V0
2V4
2V7
−3
−5
0
20
40
IZ (mA)
60
0
4
8
12
BZT52H-C2V4 to BZT52H-C4V3
BZT52H-C4V7 to BZT52H-C12
Tj = 25 °C to 150 °C
Tj = 25 °C to 150 °C
Fig 3. Temperature coefficient as a function of
working current; typical values
IZ (mA)
20
Fig 4. Temperature coefficient as a function of
working current; typical values
9397 750 15082
Product data sheet
16
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 December 2005
6 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
8. Package outline
1.7
1.5
1.2
1.0
1
0.55
0.35
3.6
3.4
2.7
2.5
2
0.70
0.55
0.25
0.10
Dimensions in mm
04-11-29
Fig 5. Package outline SOD123F
9. Packing information
Table 11: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
BZT52H-C2V4 to SOD123F
BZT52H-C75
[1]
Description
Packing quantity
4 mm pitch, 8 mm tape and reel
3000
10000
-115
-135
For further information and the availability of packing methods, see Section 16.
10. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 6. Reflow soldering footprint SOD123F
9397 750 15082
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 December 2005
7 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
11. Revision history
Table 12:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BZT52H_SER_1
20051222
Product data sheet
-
9397 750 15082
-
9397 750 15082
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 December 2005
8 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
14. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 15082
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 December 2005
9 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
17. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data. . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Packing information. . . . . . . . . . . . . . . . . . . . . .
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
2
2
2
3
3
4
7
7
7
8
9
9
9
9
9
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 22 December 2005
Document number: 9397 750 15082
Published in The Netherlands
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