RMPA39000 37–40 GHz GaAs MMIC Power Amplifier General Description Features The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA39000 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. • 24dB small signal gain (typ.) • 29dBm saturated power out (typ.) • Circuit contains individual source vias • Chip size 4.28mm x 2.90mm x 50µm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+5V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) ©2004 Fairchild Semiconductor Corporation Ratings +6 -2 +8 1092 +20 -30 to +85 -55 to +125 17 Units V V V mA dBm °C °C °C/W RMPA39000 Rev. D RMPA39000 June 2004 Parameter Frequency Range Gain Supply Voltage (Vg)1 Gain Small Signal at Pin = 0dBm Gain Variation vs. Frequency Power Output at 1dB Compression Power Output Saturated (Pin = +13dBm) Drain Current at Pin = 0dBm Drain Current at P1dB Compression Drain Current at Psat (Pin = +13dBm) Power Added Efficiency (PAE) at P1dB OIP3 (17dBm/Tone) (10 MHz Tone Sep.) Input Return Loss (Pin = -10dBm) Output Return Loss (Pin = -10dBm) Min 37 20 27.5 Typ -0.15 24 ±1 28 29 700 730 750 17 36 8 7 Max 40 Units GHz V dB dB dBm dBm mA mA mA % dBm dB dB Note: 1. Typical range of the negative gate voltage is -0.5V to 0.0V to set typical Idq of 700mA. ©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D RMPA39000 Electrical Characteristics 50Ω system, Vd = +5V, Quiescent current (Idq) = 700mA CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap between the chip and the substrate material. DRAIN SUPPLY (Vd = +5V) (VDA & VDB) MMIC CHIP RF IN RF OUT GROUND (Back of the Chip) GATE SUPPLY (VGA & VGB) Figure 1. Functional Block Diagram 2.490 2.598 2.580 1.655 1.475 1.295 0.370 0.352 0.0 0.0 0.202 0.102 4.002 4.280 4.141 Dimensions in mm Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 4.28mm x 2.90mm x 50µm. Back of chip is RF and DC Ground) ©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D RMPA39000 Application Information RMPA39000 DRAIN SUPPLY (Vd = +5V) (Connect to both VDA & VDB) 10000pF L 10 0pF BOND WIRE Ls L MMIC CHIP RF IN RF OUT L GROUND (Back of Chip) BOND WIRE Ls 100pF L 10000pF GATE SUPPLY (Vg) (VGA and/or VGB) Figure 3. Recommended Application Schematic Circuit Diagram ©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D 10,000 pF Vd (Positive) 10,000 pF Die-Attach 80Au/20Sn 2 mil Gap 100 pF 100 pF 5mil Thick Alumina 50Ω 5 mil Thick Alumina 50Ω RF Input RF Output L< 0.015" (4 Plcs) 100 pF 10,000 pF Vg (Negative) 100 pF Vd (Positive) 10,000 pF Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply. Figure 4. Recommended Assembly and Bonding Diagram ©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D RMPA39000 Vg (Negative) CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 700mA. The following sequence of steps must be followed to properly test the amplifier. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 1: Turn off RF input power. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Note: An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below. Step 3: Slowly apply positive drain bias supply voltage of +5V to Vd. D3 D1N6098 +6V D2 D1N6098 C1 0.1µF R1 3.0k R3 1.0k + * U2 V+ 0 V- 2 – +2.62V R4 1.2k R2 6.8k LM2941T 1 AD820/AD U1A 7400 0 0 3 2 CNT 5 4 IN OUT 3 GND C2 0.47µF ADJ 1 R6 R5 3k 0 1k 0 MMIC_+VDD C3 22µF 0 *Adj. For –Vg –5V MMIC_–VG C4 0.1µF *–5V Off: +3.33V –5V Off: +1.80V R7 8.2k C5 0.1µF R8 1.0k 0 0 0 Figure 5. Application Information Auto-Bias Circuit ©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D RMPA39000 Recommended Procedure for Biasing and Operation RMPA39000 Typical Characteristics RMPA39000 Gain vs. Frequency Vd = 5V, Id = 700mA 25.0 24.5 GAIN (dB) 24.0 23.5 23.0 22.5 22.0 36.5 37.0 37.5 38.0 3 8.5 39.0 39.5 40.0 40.5 40.0 40.5 FREQUENCY (GHz) RMPA39000 Saturated Pout vs. Frequency Vd = 5V, Id = 700mA 30.0 Pout (dBm) 29.5 29.0 28.5 28.0 36.5 37.0 37.5 38.0 3 8.5 39.0 39.5 FREQUENCY (GHz) ©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D RMPA39000 Typical Characteristics (Continued) RMPA39000 S-Parameters vs. Frequency Vd = 5V, Idq = 700mA 30 S21 20 Sij (dB) 10 S11 0 S22 -10 -20 -30 20 25 30 35 40 45 50 FREQUENCY (GHz) Output Power, Power Added Efficiency, Gain and Compression Bias Conditions: Vd = 5V, Iq = 700mA, F = 37GHz 30 20 Pout Max: 27.98dBm Pout (dBm) 15 20 10 PAE Pout X 15 10 5 -20 COMP X X X 5 GAIN & COMP (dB), PAE (%) X GAIN 25 0 -5 -15 -10 -5 0 5 10 15 20 Pin (dBm) ©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D RMPA39000 Typical Characteristics (Continued) RMPA39000 OIP3 vs. Output Power/Tone Vd = 5V, Idq = 700mA, Tone Sep 10 MHz 38 37 OIP3 (dBm) 36 39GHz 38GHz 40GHz 35 37GHz 34 33 32 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Pout/TONE (dBm) ©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. 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A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11