MOTOROLA D45C 4.0 ampere complementary silicon power transistors 80 volt Datasheet

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by D45C/D
SEMICONDUCTOR TECHNICAL DATA
4.0 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
. . . for general purpose driver or medium power output stages in CW or switching
applications.
• Low Collector–Emitter Saturation Voltage — 0.5 V (Max)
• High ft for Good Frequency Response
• Low Leakage Current
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v
v
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CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
80
Vdc
Collector–Emitter Voltage
VCES
90
Vdc
Emitter Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak (1)
IC
4.0
6.0
Adc
Total Power Dissipation @ TC = 25_C
Total Power Dissipation @ TA = 25_C
PD
30
1.67
Watts
W/_C
TJ, Tstg
– 55 to 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
4.2
_C/W
Thermal Resistance, Junction to Ambient
RθJA
75
_C/W
TL
275
_C
Min
Max
Unit
40
20
20
120
—
—
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
(1) Pulse Width
6.0 ms, Duty Cycle
50%.
ELECTRICAL CHARACTERISTICS (TJ = 25_C unless otherwise noted)
Characteristic
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.2 Adc)
(VCE = 1.0 Vdc, IC = 1.0 Adc)
(VCE = 1.0 Vdc, IC = 2.0 Adc)
Symbol
hFE
—
(REPLACES D44C)
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
D45C
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector Cutoff Current
(VCE = Rated VCES, VBE = 0)
ICES
—
—
0.1
µA
Emitter Cutoff Current
(VEB = 5.0 Vdc)
IEBO
—
—
10
µA
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 50 mAdc)
VCE(sat)
—
0.135
0.5
Vdc
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
—
0.85
1.3
Vdc
Ccb
—
125
—
pF
fT
—
40
—
MHz
td + tr
—
50
75
ns
Storage Time
(IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
ts
—
350
550
ns
Fall Time
(IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
tf
—
50
75
ns
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Gain Bandwidth Product
(IC = 20 mA, VCE = 4.0 Vdc, f = 20 MHz)
SWITCHING TIMES
Delay and Rise Times
(IC = 1.0 Adc, IB1 = 0.1 Adc)
200
hFE, DC CURRENT GAIN
100
90
80
70
60
50
40
30
20
0.04
0.07 0.1
0.2 0.3 0.4
0.7 1.0
IC, COLLECTOR CURRENT (AMPS)
2.0
Figure 1. Typical DC Current Gain
2
3.0 4.0
IC, COLLECTOR CURRENT (AMPS)
10
VCE = 1.0 Vdc
TJ = 25°C
1.0 µs
10 µs
5.0
3.0
2.0
0.1 ms
dc
1.0
0.5
0.3
0.2
0.1
1.0 ms
TC ≤ 70°C
DUTY CYCLE ≤ 50%
0.05
0.03
0.02
0.01
1.0
50
5.0 7.0 10
20 30
2.0 3.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
Motorola Bipolar Power Transistor Device Data
D45C
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
D45C
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4
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Motorola Bipolar Power Transistor Device Data
*D45C/D*
D45C/D
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