2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE (1) = 500 to 1500 • Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 7 V DC IC 3 Pulse ICP 5 IB 1 Collector current Base current Ta = 25°C Collector power dissipation Tc = 25°C Junction temperature Storage temperature range PC 2.0 25 A A W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base Emitter 1 2006-11-21 2SD2092 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 10 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 μA V (BR) CEO IC = 50 mA, IB = 0 100 ― ― V Collector-emitter breakdown voltage hFE (1) VCE = 1 V, IC = 0.5 A 500 ― 1500 hFE (2) VCE = 1 V, IC = 1 A 150 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 10 mA ― ― 0.3 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 10 mA ― ― 1.2 V IE = 1 A, IB = 0 ― ― 2.0 V VCE = 5 V, IC = 0.5 A ― 140 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 30 ― pF ― 0.5 ― ― 5 ― ― 0.7 ― Collector-emitter forward voltage Transition frequency Collector output capacitance Turn-on time VECF fT Cob Output ton Input Storage time 20 μs tstg IB2 IB2 IB1 Switching time Fall time IB1 30 Ω DC current gain μs VCC = 30 V tf IB1 = −IB2 = 10 mA, duty cycle ≤ 1% Marking D2092 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2092 IC – VCE VCE – IC 1.2 10 Tc = 25°C 2.4 2 2.0 1.6 1.4 1.2 1 0.8 0.5 0.4 IB = 0.2 mA 1.0 2 4 2 8 6 12 10 Collector-emitter voltage 16 14 4 10 14 30 0.4 40 0.2 80 0 0 18 0.4 0.8 VCE (V) 1.2 1.6 2.0 Collector current IC VCE – IC 1.2 14 20 VCE (V) 10 30 0.8 0.6 40 0.4 80 (A) Tc = −55°C IB = 0.5 mA 2 4 10 14 20 0.8 0.6 30 0.4 40 0.2 80 ) 0.2 1.0 Collector-emitter voltage VCE (V) Collector-emitter voltage Tc = 100°C 4 2.8 Common emitter Common emitter IB = 0.5 mA 2 2.4 VCE – IC 1.2 1.0 20 0.6 0 0 0 Tc = 25°C IB = 0.5 mA 0.8 Collector-emitter voltage (A) Collector current IC Common emitter Common emitter 4 VCE (V) 2.8 20 0 0 0.4 0.8 1.2 1.6 2.0 Collector current IC 2.4 0 0 2.8 0.4 0.8 (A) 1.2 1.6 Collector current IC hFE – IC 2.8 (A) hFE – IC Common emitter DC current gain hFE Tc = 100°C DC current gain hFE 2.4 3000 3000 1000 500 VCE = 5 V 300 100 2.0 2 Common emitter 1 0.1 0.3 0.5 1 Collector current IC 3 500 VCE = 1 V 25 −55 300 100 Tc = 25°C 50 0.05 1000 5 50 0.05 10 (A) 0.1 0.3 0.5 1 Collector current IC 3 3 5 10 (A) 2006-11-21 2SD2092 VCE (sat) – IC VBE (sat) – IC IC/IB = 100 Base-emitter saturation voltage VBE (sat) Collector-emitter saturation voltage VCE (sat) (V) Common emitter 1 0.5 0.3 Tc = 100°C 25 0.1 −55 0.05 0.03 0.05 0.1 5 (V) 3 0.3 0.5 1 3 Collector current IC 5 10 Common emitter 3 IC/IB = 100 1 Tc = −55°C 25 0.5 100 0.3 0.1 0.05 0.1 0.3 (A) (A) 10 Common emitter VCE = 1 V 5 (A) 3 2.0 IC max (pulsed)* IC max (continuous) 100 μs* 1 ms* 10 ms* (A) Tc = 100°C 25 Collector current IC 1.5 −55 1.0 0.5 0.2 0.4 0.6 0.8 Base-emitter voltage 1.0 1.2 1.4 100 ms* 1 DC operation Tc = 25°C 0.5 0.3 1.6 0.1 VBE (V) 0.05 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.03 2 5 10 30 VCEO max 50 100 200 Collector-emitter voltage VCE (V) rth – tw 100 Curves should be applied in thermal limited area. Transient thermal resistance rth (°C/W) Collector current IC 3 Safe Operating Area IC – VBE 0 0 1 Collector current IC 3.0 2.5 0.5 30 (2) (Ｓingle nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 (1) 3 1 0.3 0.001 0.01 0.1 1 Pulse width 4 10 tw 100 1000 (s) 2006-11-21 2SD2092 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21