FAIRCHILD KSP26

KSP25/26/27
KSP25/26/27
Darlington Transistor
• Collector-Emitter Voltage: VCES=KSP25: 40V
KSP26: 50V
KSP27: 60V
• Collector Power Dissipation: PC (max) =625mW
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCES
Parameter
Value
Units
40
50
60
V
V
V
Collector-Emitter Voltage
: KSP25
: KSP26
: KSP27
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55~150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCES
BVCBO
ICBO
Parameter
Collector-Emitter Breakdown Voltage
: KSP25
: KSP26
: KSP27
Test Condition
IC=100µA, IE=0
Collector-Base Breakdown Voltage
: KSP25
: KSP26
: KSP27
IC=100µA, IE=0
Min.
Max.
Units
40
50
60
V
V
V
40
50
60
V
V
V
Collector Cut-off Current
: KSP25
: KSP26
: KSP27
VCE=30V, IE=0
VCE=40V, IE=0
VCE=50V, IE=0
IEBO
Emitter Cut-off Current
VEB=10V, IB=0
hFE
* DC Current Gain
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE (sat)
* Collector-Emitter Saturation Voltage
IC=100mA, IB=0.1mA
VBE (on)
* Base-Emitter On Voltage
VCE=5V, IC=100mA
100
100
100
nA
nA
nA
100
nA
10K
10K
1.5
V
2
V
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP25/26/27
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000k
hFE, DC CURRENT GAIN
VCE = 5V
100k
10k
1k
1
10
100
1000
10
IC = 1000 IB
V BE(sat)
1
V CE(sat)
0.1
10
IC[mA], COLLECTOR CURRENT
400
100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10k
200
100
IC[A], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
VCE = 5V
10
100µ S
1k
1mS
1S
O
T C = 25 C
100
O
T a = 25 C
1
0.0
10
0.4
0.8
1.2
1.6
2.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
2.4
1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A2, September 2002
KSP25/26/27
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1