Diodes DMN4015LK3 40v n-channel enhancement mode mosfet Datasheet

A Product Line of
Diodes Incorporated
DMN4015LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
TA = 25°C
15mΩ @ VGS= 10V
20.8A
20mΩ @ VGS= 4.5V
18.0A
•
Low on-resistance
•
Fast switching speed
•
“Green” component and RoHS compliant (Note 1)
40V
Mechanical Data
•
Case: TO252-3L
Description and Applications
•
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Backlighting
•
Marking Information: See Below
•
DC-DC Converters
•
•
Ordering Information: See Below
Power management functions
•
Weight: 0.33 grams (approximate)
D
D
G
D
G
TOP VIEW
Ordering Information
Product
DMN4015LK3-13
Note:
S
S
PIN OUT -TOP VIEW
Equivalent Circuit
(Note 1)
Marking
N4015L
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YYWW
N4015L
DMN4015LK3
Document Revision: 1
= Manufacturer’s Marking
N4015L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 09 = 2009)
WW = Week (01-52)
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DMN4015LK3
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
TA=70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
ID
IDM
IS
ISM
Value
40
±20
20.8
16.6
13.5
72.8
13.2
72.8
Unit
V
V
Value
4.36
34.8
10.3
82.4
2.19
17.5
28.6
12.1
57.0
0.85
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Note 2)
Power dissipation
Linear derating factor
(Note 3)
PD
(Note 5)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 2)
(Note 3)
(Note 5)
(Note 6)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
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Thermal Characteristics
100
100
RDS(on)
Limited
ID Drain Current (A)
ID Drain Current (A)
RDS(on)
10
DC
1
1s
100ms
100m
10ms
Limited
10
DC
1
1s
100ms
10ms
100m
T amb=25°C
1ms
25mm x 25mm
1oz FR4
10m
100m
100µs
1
T amb=25°C
10m
0.1
10
100µs
1
VDS Drain-Source Voltage (V)
10
VDS Drain-Source Voltage (V)
Safe Operating Area
Safe Operating Area
30
T amb=25°C
50
25mm x 25mm
1oz FR4
40
D=0.5
30
20
D=0.1
D=0.2
D=0.05
10
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
60
Thermal Resistance (°C/W)
1ms
50mm x 50mm
2oz FR4
Transient Thermal Impedance
T amb=25°C
25
50mm x 50mm
2oz FR4
20
D=0.5
15
10
D=0.1
D=0.2
D=0.05
5
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Max Power Dissipation (W)
4.5
Single Pulse
T amb=25°C
4.0
50mm x 50mm
2oz FR4
3.5
3.0
25mm x 25mm
1oz FR4
2.5
2.0
1.5
1.0
0.5
0.0
0
Pulse Power Dissipation
DMN4015LK3
Document Revision: 1
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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DMN4015LK3
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
40
⎯
⎯
V
ID = 250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
0.5
μA
VDS= 40V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
VGS(th)
1.0
⎯
3.0
V
ID= 250μA, VDS= VGS
ON CHARACTERISTICS
Gate Threshold Voltage
15
VGS= 10V, ID= 14A
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 7 & 8)
gfs
⎯
35.3
⎯
S
VDS= 15V, ID= 12A
Diode Forward Voltage (Note 7)
VSD
⎯
0.87
1.0
V
IS= 14A, VGS= 0V
Reverse recovery time (Note 8)
trr
141
⎯
ns
Reverse recovery charge (Note 8)
Qrr
⎯
872
⎯
nC
Input Capacitance
Ciss
⎯
2072
⎯
pF
Output Capacitance
Coss
⎯
338
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
193
⎯
pF
Total Gate Charge
Qg
⎯
21
⎯
nC
Total Gate Charge
Qg
⎯
42
⎯
nC
Gate-Source Charge
Qgs
⎯
7.3
⎯
nC
Gate-Drain Charge
Qgd
⎯
10.7
⎯
nC
Turn-On Delay Time (Note 9)
tD(on)
⎯
7.8
⎯
ns
Turn-On Rise Time (Note 9)
tr
⎯
18.5
⎯
ns
tD(off)
⎯
37.3
⎯
ns
tf
⎯
14.9
⎯
ns
Static Drain-Source On-Resistance (Note 7)
20
mΩ
VGS= 4.5V, ID= 11A
IS= 14A, di/dt= 100A/μs
DYNAMIC CHARACTERISTICS (Note 8)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
VDS= 20V, VGS= 0V
f= 1MHz
VGS= 4.5V
VGS= 10V
VDS= 20V
ID= 14A
VDD= 20V, VGS= 10V
ID= 14A, RG ≅ 6.0Ω
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
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Typical Characteristics
T = 25°C
4V
3V
1
0.1
T = 150°C
10V
3.5V
2.5V
VGS
3.5V
10
ID Drain Current (A)
ID Drain Current (A)
10V
10
3V
2.5V
1
2V
0.1
0.01
VGS
1.5V
0.01
0.1
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1
T = 150°C
0.1
T = 25°C
0.01
1E-3
1
2
3
4
VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
DMN4015LK3
Document Revision: 1
10
VGS
2.5V
3V
3.5V
1
T = 25°C
0.1
4V
0.01
0.01
10V
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
VGS = 10V
1.4
ID = 14A
RDS(on)
1.2
1.0
0.8
0.4
-50
VGS(th)
VGS = VDS
0.6
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
ID Drain Current (A)
VDS = 10V
Normalised RDS(on) and VGS(th)
1.6
10
10
1
T = 150°C
0.1
T = 25°C
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
3000
C Capacitance (pF)
2500
f = 1MHz
2000
CISS
COSS
1500
CRSS
1000
500
0
0.1
1
10
VGS Gate-Source Voltage (V)
10
VGS = 0V
8
6
4
VDS = 20V
2
0
ID = 14A
0
Capacitance v Drain-Source Voltage
5
10
15
20
25
30
35
40
45
Q - Charge (nC)
VDS - Drain - Source Voltage (V)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
DMN4015LK3
Document Revision: 1
Switching time test circuit
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Package Outline Dimensions
DIM
Inches
Millimeters
Min
Max
Min
DIM
Max
Inches
Min
Millimeters
Max
Min
A
0.086
0.094
2.18
2.39
e
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1
0.205
-
5.21
-
θ1°
0°
10°
0°
10°
E
0.250
0.265
6.35
6.73
θ°
0°
15°
0°
15°
E1
0.170
-
4.32
-
-
-
-
-
-
DMN4015LK3
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0.090 BSC
Max
2.29 BSC
July 2009
© Diodes Incorporated
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Diodes Incorporated
DMN4015LK3
Suggested Pad Layout
6.2
0.244
3.0
0.118
5.8
0.228
1.6
0.063
2.58
0.101
6.17
0.243
mm
inches
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
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