UMS CHR2291-99F 12-17ghz integrated down converter Datasheet

CHR2291
RoHS COMPLIANT
12-17GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
LO
The CHR2291 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
Q
GM
GB
VDM
VDL
GX
VGA
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
I
RF
Typical on wafer measurement:
Conversion Gain & Image suppression @ IF=1& 1.5GHz
Main Features
14
Broadband performances : 12-17GHz
12
10
10 dB conversion gain
8
2LO Frequency
6
3.5dB noise figure, for IF>0.1GHz
4
2
10dBm LO input power
(dB)
•
•
•
•
•
•
•
-8dBm RF input power (1dB gain comp.)
0
-2
-4
Low DC power consumption, [email protected]
-6
-8
-10
Chip size : 2.49 X 2.13 X 0.10 mm
-12
-14
-16
11,0
12,0
13,0
14,0
15,0
16,0
17,0
RF Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Typ
Max
Unit
FRF
RF frequency range
12
17
GHz
FLO
LO frequency range
5.25
7.75
GHz
FIF
IF frequency range
DC
1.5
GHz
Gc
Conversion gain
+10
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHR22911192 - 11 Jul 11
1/6
Specifications subject to change without notice
united monolithic semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
18,0
12-17GHz Integrated Down Converter
CHR2291
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA
Symbol
Parameter
Min
Typ
Max
Unit
FRF
RF frequency range
12
17
GHz
FLO
LO frequency range
5.25
7.75
GHz
FIF
IF frequency range
DC
1.5
GHz
Gc
Conversion gain (1)
+10
dB
NF
Noise Figure, for IF>0.1GHz (1)
3.5
dB
PLO
LO Input power
+10
dBm
Image Suppression
15
dBc
Input power at 1dB gain compression
-8
dBm
Img Sup
P1dB
LO VSWR Input LO VSWR (1)
2.0:1
RF VSWR Input RF VSWR (1)
2.0:1
Id
Bias current (2)
100
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 50mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage
4.0
V
Id
Maximum drain bias current
180
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Vdg
Maximum drain to gate voltage ( Vd– Vg)
+5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +125
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : : DSCHR22911192 - 11 Jul 11
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
12-17GHz Integrated Down Converter
CHR2291
Typical On-wafer Measurements
Bias Conditions: Vdm= Vdl= 3.5 V, Vgm= -0.7V, Vgb= -0.4V, Vgx= -0.6V, Vga= -0.4V
14
12
10
8
2LO Frequency
6
4
(dB)
2
0
-2
-4
-6
-8
-10
-12
-14
-16
11,0
12,0
13,0
14,0
15,0
16,0
17,0
18,0
RF Frequency (GHz)
Conversion gain & Image suppression with a 90° IQ c ombiner @ IF=1 & 1.5GHz
10
8
6
4
2
0
-2
-4
-6
Freq. RF= 15GHz
Freq LO= 7GHz
-8
-10
Conversion Gain_I (dB)
IF_power_I (dBm)
-12
Conversion Gain_Q (dB)
IF_power_Q (dBm)
-14
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Input RF power (dBm)
Input RF compression by channel
Ref. : : DSCHR22911192 - 11 Jul 11
3/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
12-17GHz Integrated Down Converter
CHR2291
Typical On-board Measurements
Bias Conditions: Vdm= Vdl= 3.5 V, Vgm= -0.7V, Vgb= -0.4V, Vgx= -0.6V, Vga= -0.4V
32
LO= RF + IF
28
Rejection
(dB & dBc)
24
20
16
Gain
12
8
4
RF=12.75GHz
RF=14.05GHz
RF=15.35GHz
0
-2
-1,5
-1
-0,5
0
0,5
1
1,5
2
IF Frequency (GHz)
Conversion Gain & Image Rejection with a 90° IQ com biner
Ref. : : DSCHR22911192 - 11 Jul 11
4/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
12-17GHz Integrated Down Converter
CHR2291
Chip Assembly and Mechanical Data
LO
IN
Q
OUT
To Vgm DC Gate Supply
To Vgb DC Gate Supply
To Vdm,Vdl DC Drain Supply
I
OUT
To Vgx DC Gate Supply
To Vga DC Gate Supply
RF
IN
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Bonding pad positions
( Chip thickness : 100µm. All dimensions are in micrometers )
Ref. : : DSCHR22911192 - 11 Jul 11
5/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
12-17GHz Integrated down converter
CHR2291
Ordering Information
Chip form
:
CHR2291-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHR22911192 - 11 Jul 11
6/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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