ASI BLW81 Npn silicon rf power transistor Datasheet

BLW81
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
The ASI BLW81 is Designed for
Class A,B or C UHF & VHF
Communications
A
45°
C
E
B
FEATURES:
E
B
• PG = 6 dB Typical at 470 MHz
• Omnigold™ Metallization System
C
D
J
E
I
F
G
MAXIMUM RATINGS
H
K
2.5 A
IC
VCB
36 V
PDISS
40 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
DIM
MINIMUM
inches / mm
inches / mm
A
1.010 / 25.65
1.055 / 26.80
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
CHARACTERISTICS
.130 / 3.30
G
.245 / 6.22
H
TEST CONDITIONS
BVCEO
IC = 100 Ma
BVCES
IC = 25 Ma
BVEBO
IE = 10 Ma
ICES
VCE = 17 V
hFE
VCE = 5.0 V
COB
VCB = 12.5 V
PG
η
.255 / 6.48
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
TC = 25 °C
SYMBOL
POUT
.137 / 3.48
.572 / 14.53
F
4.4 °C/W
MAXIMUM
B
I
θJC
#8-32 UNC
VCE = 12.5 V
MINIMUM TYPICAL MAXIMUM
VBE = 0 V
V
36
V
4
V
10
IC = 1.25 A
10
F = 1. 0 MHz
PIN = 2.5 W
F = 470 MHz
UNITS
17
--34
10.0
6.0
60
12.0
13.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
pF
W
DB
%
REV 0
1/1
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