Diotec BCV26 Surface mount si-epitaxial planartransistor Datasheet

BCV26, BCV46
PNP
Darlington Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Version 2004-01-20
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.3 ±0.1
2.5 max
3
Type
Code
2
1
250 mW
1.9
Dimensions / Maße in mm
1 = B1 2 = E2 3 = C
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BCV26
BCV46
Collector-Emitter-voltage
VBE = 0
- VCES
30 V
60 V
Collector-Base-voltage
E open
- VCB0
40 V
80 V
Emitter-Base-voltage
C open
- VEB0
10 V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
- IC
500 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
800 mA
Base current – Basisstrom (dc)
- IB
100 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
- ICB0
- ICB0
–
–
–
–
100 nA
100 nA
- IEB0
–
–
100 nA
–
–
1V
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V
IE = 0, - VCB = 60 V
BCV26
BCV46
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 10 V
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IC = 100 mA, - IB = 0.1 mA
1
- VCEsat
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
6
Darlington Transistors
BCV26, BCV46
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
–
–
1.5 V
1
Base saturation voltage – Basis-Sättigungsspannung )
- IC = 100 mA, - IB = 0.1 mA
VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 5 V, - IC = 1 mA
BCV26
BCV46
hFE
hFE
4000
2000
–
–
–
–
- VCE = 5 V, - IC = 10 mA
BCV26
BCV46
hFE
hFE
10000
4000
–
–
–
–
- VCE = 5 V, - IC = 100 mA
BCV26
BCV46
hFE
hFE
20000
10000
–
–
–
–
- VBEon
–
–
1.4 V
fT
–
220 MHz
–
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 10 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
420 K/W 2)
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BCV27, BCV47
Marking – Stempelung
BCV26 = FD
Pinning – Anschlußbelegung
BCV46 = FE
3
3
T1
T2
1
1
2
2
1
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
7
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