BELLING BLV730 N-channel enhancement mode power mosfet Datasheet

BLV730
N-channel Enhancement Mode Power MOSFET
•
Avalanche Energy Specified
BVDSS
400V
•
Fast Switching
RDS(ON)
1.0Ω
Ω
•
Simple Drive Requirements
ID
5.5A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol
Parameter
Value
Units
VDS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
+ 20
V
Continuous Drain Current
5.5
A
Continuous Drain Current ( TC=100 oC)
3.5
A
Drain Current (pulsed) (Note 1)
22
A
Power Dissipation
74
W
Linear Derating Factor
0.59
W/℃
EAS
Single Pulsed Avalanche Energy (Note2)
290
mJ
IAR
Avalanche Current
5.5
A
EAR
Repetitive Avalanche Energy
7.4
mJ
ID
IDM
PD
Tj
TSDG
Operating Junction Temperature Range
Storage Temperature Range
-55 to +150
o
-55 to +150
o
C
C
Thermal Characteristics
Symbol
Parameter
Rth j-c
Thermal Resistance, Junction to case
Rth j-a
Thermal Resistance, Junction to Ambient
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Max.
Max.
Value
Units
1.7
℃/ W
62.5
℃/ W
3/28/2007
Page 1/6
BLV730
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
400
-
-
V
∆BVDSS
/∆TJ
Breakdown Voltage
Temperature Coefficient
Reference to 25℃,
ID=250uA
-
0.54
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.3A
-
-
1.0
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
g fs
Forward Transconductance(note3)
VDS=15V, ID=3.3A
2.9
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current
Tc=125℃
VDS=400V, VGS=0V
-
-
1
uA
VDS=320V, VGS=0V
-
-
50
uA
IGSS
Gate-Source Leakage Current
VGS= ± 20V
-
-
±100
nA
Qg
Total Gate Charge
-
-
38
nC
Qgs
Gate-Source Charge
-
-
5.7
nC
Qgd
Gate-Drain Charge
VDD=320V
ID=3.5A
VGS=10V
note3
-
-
22
nC
t (on)
Turn-on Delay Time
-
10
-
ns
tr
Turn-on Rise Time
-
15
-
ns
t (off)
Turn-off Delay Time
-
38
-
ns
tf
Turn-off Fall Time
-
14
-
ns
Ciss
Input Capacitance
-
700
-
pF
Coss
Output Capacitance
-
170
-
pF
Crss
Reverse Transfer Capacitance
-
64
-
pF
Min.
Typ.
Max.
Units
VDD=200V
ID=3.5A
RG=25Ω
note3
VDS=25V
VGS=0V
f = 1MHz
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Diode Forward Current
-
-
5.5
A
ISM
Pulsed Source Diode Forward Current (note1)
-
-
22
A
VSD
Forward On Voltage
VGS=0V, IS=5.5A
-
-
2.0
V
trr
Reverse Recovery Time
VGS=0V, IS=5.5A
-
270
530
ns
Qr r
Reverse Recovery Charge
dIF/dt = 100A/us
-
1.0
2.2
uC
注:
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) L=16mH, Ias=5.5A,Vdd=50V,Rg=25Ω,staring Tj=25C
(3) Pulse width ≤ 300 us; duty cycle ≤ 2%
http://www.belling.com.cn
3/28/2007
Page 2/6
BLV730
N-channel Enhancement Mode Power MOSFET
Typical Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Normalized Gate Threshold
Voltage vs. Temperature
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs.
Junction Temperature
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3/28/2007
Page 3/6
BLV730
N-channel Enhancement Mode Power MOSFET
Typical Characteristics (continued)
)
Fig 5. On-Resistance Variation vs.
Drain Current and Gate Voltage
Fig 7. Gate Charge Characteristics
Fig 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Fig 8. Capacitance Characteristics
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3/28/2007
Page 4/6
BLV730
N-channel Enhancement Mode Power MOSFET
Typical Characteristics (continued)
)
Fig 9. Maximum Safe Operating Area
Fig 10. Transient Thermal Response Curve
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3/28/2007
Page 5/6
BLV730
N-channel Enhancement Mode Power MOSFET
Test Circuit and Waveform
Fig 11. Gate Charge Circuit
Fig 12. Gate Charge Waveform
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Unclamped Inductive
Switching Test Circuit
Fig 16. Unclamped Inductive
Switching Waveforms
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3/28/2007
Page 6/6
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