Fuji ERB84-009 Schottky barrier diode Datasheet

ERB84-009 (2A)
(90V / 2A )
Outline drawings, mm
SCHOTTKY BARRIER DIODE
ø4.0
ø0.8
7.5
25 MIN.
25 MIN.
Marking
Features
Color code : Blue
Low VF
Abridged type name
High reliability by planer design
Lot No.
Applications
Cathode mark
02
009 ···
Voltage class
B84
Super high speed switching
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Square wave, duty=1/2
Ta=25°C
Surge current
IFSM
Sine wave
10ms
Operating junction temperature
Storage temperature
Rating
Unit
90
V
2.0*
A
60
A
Tj
-40 to +150
°C
Tstg
-40 to +150
°C
* With cooling Cu fin both lead (1t x 20 x 20mm)
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop
VFM
IFM=2.0A
0.9
V
Reverse current
IRRM
VR=VRRM
2.0
mA
ERB84-009 (2A)
(90V / 2A )
Characteristics
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
100
10
2
10
1
Tj=150°C
IR Reverse Current (mA)
IF Forward Current (A)
Tj=125 °C
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
10
Tj=100 °C
0
-1
10
-2
Tj= 25°C
10
-3
10
0.1
-4
0.0
0.1
0.2
0.3
0.4
0.5 0.6
VF
0.7
0.8
0.9
1.0
1.1
1.2
1.3
10
1.4
0
10
20
30
Forward Power Dissipation
70
80
90
100
110
DC
(W)
2.0
λ
Reverse Power Dissipation
1.6
Square wave λ =60°C
1.4
Square wave λ =120°C
Sine wave λ=180°C
1.2
Square wave λ =180°C
DC
1.0
360°
4.5
VR
4.0
360°
1.8
0.8
0.6
PR
(W)
60
Reverse Power Dissipation
Io
2.2
Forward Power Dissipation
50
5.0
2.4
WF
40
VR Reverse Voltage (V)
Forward Voltage (V)
α
3.5
3.0
2.5
α =180°C
2.0
1.5
1.0
0.4
0.5
0.2
Per 1element
0.0
0.0
0.0
0.2
0.4
0.6
Io
0.8
1.0
1.2
1.4
1.6
Average Forward Current
1.8
2.0
2.2
0
10
50
60
Reverse Voltage
70
80
90
100
(V)
2.6
360°
λ
Io
2.4
L=5mm
Cu area:1tx20x20mm
2.2
2.4
Average Output Current
DC
1.6
1.4
1.2
1.0
Sine wave λ =180°C
0.8
Square wave λ=180°C
Io
0.6
Square wave λ =120°C
360°
λ
Io
VR=50V
(A)
1.8
L=10mm
Land an area:5x5mm
2.2
VR=50V
2.0
(A)
40
Current Derating (Io-Ta)
Current Derating (Io-Ta)
Average Output Current
30
VR
(A)
2.6
Io
20
2.0
DC
Sine wave λ =180°C
1.8
Square wave λ =180°C
1.6
Square wave λ=120°C
1.4
Square wave λ=60°C
1.2
1.0
0.8
0.6
0.4
0.4
Square wave λ =60°C
0.2
0.2
0.0
0.0
0
10
20 30 40
Ta
50
60 70 80
90 100 110 120 130 140 150 160
Ambient Temperature
(°C)
0
10
20 30 40
Ta
50
60 70 80
90 100 110 120 130 140 150 160
Ambient Temperature
(°C)
ERB84-009 (2A)
(90V / 2A )
Current Derating (Io-Tl)
Current Derating (Io-Ta)
2.4
2.6
360°
λ
Io
2.4
L=10mm
Land an area:10x10mm
Io
2.0
2.0
(A)
VR=50V
DC
Average Output Current
1.8
Sine wave λ=180°C
1.6
Square wave λ=180°C
1.4
Square wave λ =120°C
1.2
Square wave λ=60°C
1.0
0.8
Io
Average Output Current
(A)
2.2
VR=50V
2.2
0.6
1.8
1.6
1.4
1.2
DC
1.0
Sine wave λ =180°C
Square wave λ =180°C
0.8
Square wave λ =120°C
Square wave λ =60°C
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
10
20 30 40
50
Ta
60 70 80
60
90 100 110 120 130 140 150 160
Ambient Temperature
70
(°C)
80
90
100
110
120
Tl Lead Temperature
Junction Capacitance Characteristic (typ.)
130
140
150
160
(°C)
Surge Capability
1000
Peak Half - Wave Current
100
10
I FSM
100
Cj
Junction Capacitance (pF)
(A)
1000
1
10
1
10
1
100
10
Number of Cycles at 50Hz
VR
Reverse Voltage (V)
Transient Thermal Impedance
2
10
1
10
0
Transient Thermal Impedance
(°C/W)
10
-1
10
10
-2
-1
10
0
10
10
t
Time
1
(sec.)
2
10
10
3
100
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